Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for determining dynamic pressure distribution and grinding removal rate of chemical mechanical polishing grinding liquid

A grinding removal rate, chemical-mechanical technology, used in grinding machine tools, grinding devices, semiconductor/solid-state device testing/measurement, etc., can solve problems such as inability to accurately reflect CMP grinding results and extremely high requirements for wafer surface flatness

Active Publication Date: 2013-09-18
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Although the CMP prediction method has made some progress, the acquisition of the Material Removal Rate (MRR) of the polishing liquid on the wafer during the CMP process is still in the empirical demonstration stage. Generally, the experimental results are used to predict the material removal rate (MRR) of the wafer under the same grinding conditions. Wafer grinding results, this prediction method ignores the impact of polishing liquid, grinding parameters, etc. on the flatness and wafer removal rate of the wafer after grinding, and its prediction results cannot accurately reflect the grinding results of CMP
Especially in the manufacturing process of nano-scale IC devices, the flatness of the wafer surface is extremely high, and the interaction between the polishing pad, the polishing liquid and the abrasive particles and the wafer surface is an extremely complicated process, and empirical methods cannot be simply adopted to describe

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for determining dynamic pressure distribution and grinding removal rate of chemical mechanical polishing grinding liquid
  • Method for determining dynamic pressure distribution and grinding removal rate of chemical mechanical polishing grinding liquid
  • Method for determining dynamic pressure distribution and grinding removal rate of chemical mechanical polishing grinding liquid

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0077] In the CMP grinding process, in addition to the external force on the wafer, there is a multi-body interaction force between the rigid wafer, the rigid grinding particles and the random rough porous elastic surface grinding pad. The force diagram of the ground wafer 100 is shown in figure 2 . In the three-dimensional Cartesian coordinate system, the wafer undergoing CMP moves at a speed V relative to the polishing pad, and the forces on the wafer include: the external force F applied to the wafer E , The force F transmitted by the polishing pad to the wafer through the abrasive particles T , the direct contact force F between the wafer and the polishing pad DC (including the positive force F perpendicular to the wafer DCN and the friction force F on the wafer DCF ) and the shear stress F caused by the flow of the slurry on the wafer τ and normal pressure F N . During the CMP polishing process, the wafer is affected by multiple effects of the contact force between...

Embodiment 2

[0117] The wafer undergoing CMP grinding moves at a speed V relative to the polishing pad, and the force on the wafer is in addition to the external force F E , The force F transmitted by the polishing pad to the wafer through the abrasive particles T , the direct contact force F between the wafer and the polishing pad DC (including the positive force F perpendicular to the wafer DCN and the friction force F on the wafer DCF ) and the shear stress F caused by the flow of the slurry on the wafer τ and normal pressure F N In addition, because the distance between the abrasive particles in the polishing liquid and the wafer surface is very close when the wafer is being polished by CMP, there is also a van der Waals force F between the abrasive particles and the wafer. VDW and the electric double layer force F DL .

[0118] Figure 5 It is a flow chart of the method for determining the dynamic pressure distribution of the CMP grinding liquid and the grinding removal rate in...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for determining the dynamic pressure distribution and grinding removal rate of chemical mechanical polishing grinding liquid. The method comprises the following steps of: with given thickness of the grinding liquid between a wafer to be ground and a grinding pad, determining the dynamic pressure distribution of the grinding liquid and the acting force of the grinding liquid on the wafer according to the property of the grinding liquid, the angular velocity of the grinding pad and the thickness of a liquid film; determining the acting force of the grinding pad and grinding particles on the wafer during the grinding according to the properties of the grinding liquid and the grinding pad; in combination with the external force on the wafer, judging whether the acting force on the wafer is in balance with the moment; if not, correcting the thickness of the liquid film, and re-determining the acting force on the wafer and the dynamic pressure distribution of the grinding liquid; otherwise, determining the grinding removal rate of the wafer. Through the invention, the surface topography of the wafer after the chemical mechanical grinding can be predicted so as to provide instruction for the CMP (chemical mechanical polishing) technological modeling; and meanwhile, the change characteristics of the grinding surface can be reflected, and modification suggestion can be provided for the manufacturing design of an integrated circuit board so as to improve the product yield.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for determining dynamic pressure distribution and grinding removal rate of chemical mechanical polishing grinding liquid. Background technique [0002] In recent years, with the continuous decline of IC (Integrated Circuit, integrated circuit) manufacturing process feature size, IC manufacturing technology has put forward more and more stringent requirements on the device process technology, especially in the manufacturing process of semiconductor devices below 65nm, the circuit The flatness of the surface is an important factor affecting the depth of focus level and yield rate of lithography. As an important link in the semiconductor manufacturing process, the planarization technology of the wafer surface is to remove the dielectric layer and metal layer on the wafer surface during the wafer production process, so that the wafer surface is flat enough to achie...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66H01L21/306B24B37/34
Inventor 徐勤志陈岚
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI