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Storage Elements and Storage Devices

A storage element and storage layer technology, which is used in information storage, electrical elements, measurement devices, etc., can solve the problems of low heat resistance of amorphous perpendicular magnetization films and cannot withstand high temperature heat treatment, and achieve the effect of high heat resistance.

Active Publication Date: 2017-03-01
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, common amorphous perpendicular magnetization films such as TbFeCo have low heat resistance
In addition, FePt and the like are ordered phases, and in order to obtain sufficient characteristics, a high temperature of about 700°C is necessary, but the tunnel barrier etc. constituting the magnetic memory element cannot withstand high-temperature heat treatment

Method used

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  • Storage Elements and Storage Devices

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Experimental program
Comparison scheme
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Embodiment Construction

[0036] Hereinafter, embodiments of the present invention will be described in the following order.

[0037] 1. Structure of storage device and storage element of the embodiment

[0038] 2. Experiment

[0039] [2-1: Fe-Ni]

[0040] [2-2: Fe-Pd]

[0041] [2-3: Fe-Ni 85 B 15 ]

[0042] [2-4: Fe-Ni 90 B 10 ]

[0043] [2-5: NiB composition dependence in Fe-NiB]

[0044] [2-6: Film thickness dependence in Fe-(Various Ni / Pd)]

[0045] [2-7: Component dependence in FeCo-NiB]

[0046] [2-8: Film thickness dependence in Fe-Ni-Fe]

[0047] [2-9: Gradient composition distribution of Fe and Ni]

[0048] 1. Structure of storage device and storage element of the embodiment

[0049] Embodiments of the present invention perform recording of information by reversing the direction of magnetization of the storage layer of the storage element by means of spin injection. The storage layer is composed of a magnet such as a ferromagnetic layer and holds information by the magnetization ...

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Abstract

The present invention relates to memory elements and memory devices. The storage element includes: a storage layer, a magnetization fixed layer, and an insulating layer, and by injecting spin-polarized electrons in a lamination direction of a lamination structure including the storage layer, the insulating layer, and the magnetization fixed layer, the The direction of the magnetization of the storage layer is changed and information is recorded in the storage layer, and in at least one of the storage layer and the magnetization fixed layer, sequentially from the interface side in contact with the insulating layer An Fe film and a film containing Ni are formed, and a gradient composition distribution of Ni and Fe is formed after heating. The memory device includes the above-described memory element and two types of wiring, and injects spin-polarized electrons by means of a current flowing to the memory element in the lamination direction through the two types of wiring. The present invention can realize a nonvolatile memory having high heat resistance, easy application of a semiconductor process, and excellent manufacturability.

Description

[0001] Cross References to Related Applications [0002] This application contains subject matter related to that disclosed in Japanese Priority Patent Application JP2010-276590 filed in Japan Patent Office on Dec. 13, 2010, the entire content of which is hereby incorporated by reference. technical field [0003] The present invention relates to a nonvolatile storage element and a storage device including the storage element. The nonvolatile storage element includes a storage layer for storing information depending on the magnetization state of a ferromagnetic layer, an insulating layer, and a fixed magnetization with a fixed magnetization direction. layer, and the nonvolatile memory element changes the magnetization direction of the memory layer by passing a current. Background technique [0004] In information equipment such as computers, DRAMs having fast operation and high density are widely used as random access memories. Since DRAM is a volatile memory in which inform...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/00H01L43/08H10N50/10
CPCY10T428/1114Y10T428/1129Y10T428/1143Y10T428/115H10B61/22H10N50/85H10N50/10G01R33/098G01R33/093G01R33/091
Inventor 大森广之细见政功别所和宏肥后丰山根一阳内田裕行浅山徹哉
Owner SONY CORP