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Surface treatment method for strengthening aluminum process metal layer and light resistance adhesive force

A technology of surface treatment and metal layer, which is applied in the field of surface treatment to enhance the adhesion between metal layer and photoresist in aluminum process, and can solve the problems of high adhesive price, increased cost and limited adhesion.

Active Publication Date: 2012-07-04
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But the weak point of this surface adhesion promoter method is that the adhesion force that improves is limited, and want to obtain higher bonding performance and just must increase the consumption of adhesive, the price of adhesive is all higher, has increased greatly. cost
The bond between the metal surface and the photoresist is weaker, and the photoresist on the metal surface is more likely to fall off

Method used

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  • Surface treatment method for strengthening aluminum process metal layer and light resistance adhesive force
  • Surface treatment method for strengthening aluminum process metal layer and light resistance adhesive force
  • Surface treatment method for strengthening aluminum process metal layer and light resistance adhesive force

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Embodiment Construction

[0032] The present invention will be further described below in combination with principle diagrams and specific operation examples.

[0033] Such as Figures 1A-1D , shows a surface treatment method of the present invention to enhance the adhesion between the aluminum process metal layer and the photoresist. With reference to the accompanying drawings, a preferred embodiment of the method of aluminum metal photolithography comprising the inventive method is provided:

[0034] Such as Figure 1A As shown, preferably, a metal layer 12 and a metal barrier layer 13 covering the metal layer 12 are formed on the substrate 11 , and a layer of metal barrier layer 14 is further disposed between the metal layer 12 and the substrate 11 .

[0035] Among them, the metal barrier layer 13 covering the metal layer 12 and the metal barrier layer 14 between the metal layer 12 and the substrate 11 are preferably composed of titanium (Ti) or titanium and titanium nitride (TiN) mixture.

[00...

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Abstract

The invention discloses a surface treatment method for strengthening an aluminum process metal layer and light resistance adhesive force, which is used in a method of coating photoresist on the metal layer. The metal layer and a metal barrier layer covering on the metal layer are manufactured on a substrate. The method mainly comprises the steps of gas containing oxygen is led in a reaction cavity chamber and conducted equal electrolytic dissociation, a metal stopping layer covering on the metal layer is conducted high temperature plasma oxidation process, a metallic oxide film on the surface of the metal stopping layer covering on the metal layer is generated, silicon substrate organic matter compound gas is led in the reaction cavity chamber, an adsorbed layer is generated by conducting chemisorption on silicon substrate organic matter compound on the surface of the metallic oxide film, redundant silicon substrate organic matter compound gas in the reaction cavity chamber is pumped out, only the adsorbed layer is retained, a first bonding intermediate layer is generated by the adsorbed layer under plasma activation reaction.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a surface treatment method for enhancing the adhesion between an aluminum process metal layer and a photoresist. Background technique [0002] With the continuous improvement of semiconductor performance requirements, the size of integrated circuit chips is getting smaller and smaller, and the photolithography process has become the core process in chip manufacturing. Usually a complete 45nm process chip requires about 40 to 60 photolithography processes depending on the performance requirements. As the size of the device shrinks, the pattern of photolithography is also continuously reduced, the thickness of the photoresist is getting smaller and the size of the photolithography is getting smaller and smaller. With the chip production process from the micron level to the most advanced 15nm process, the wavelength used in lithography is also shrinking with the progress ...

Claims

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Application Information

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IPC IPC(8): H01L21/768H01L21/312
Inventor 张亮姬峰李磊陈玉文胡友存
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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