The invention provides a light-emitting
diode and a manufacturing method thereof, and belongs to the field of light-emitting devices. The method comprises the following steps: manufacturing an insulating material layer covering an epitaxial layer; the insulating material layer is patterned to form a current
blocking layer and an insulating material
mask layer, the insulating material
mask layer covers the step area of the epitaxial layer, and the insulating material
mask layer exposes the isolation groove area of the epitaxial layer; manufacturing a transparent conductive material layer covering the epitaxial layer and the current
blocking layer; manufacturing a first
photoresist mask layer on the transparent conductive material layer, wherein the first
photoresist mask layer exposes the step region and the isolation groove region; under the shielding of the first
photoresist mask layer, performing graphical
processing on the transparent conductive material layer to obtain a transparent conductive layer; and under the shielding of the first photoresist mask layer, performing graphical
processing on the insulating material mask layer and the epitaxial layer in the step region and the epitaxial layer in the isolation groove region, and forming a step and an isolation groove on the epitaxial layer.