Method for manufacturing SRAM (Static Random Access Memory) shared contact hole

Abstract

The invention provides a method for manufacturing an SRAM (Static Random Access Memory) shared contact hole and a method for reducing leakage current of an SRAM unit, and on the basis, further provides the SRAM unit. The method for manufacturing the SRAM shared contact hole comprises the following steps of: firstly depositing an etching baffle layer before depositing an etching stopping layer of a contact hole; during the etching of the shared contact hole, enabling etching of the shared contact hole to firstly stop on a silicon carbide thin film through an etching method of a high selection ratio of a deposition contact hole etching stopping layer to a first etching baffle layer, and removing the silicon carbide thin film by utilizing an etching method of a high selection ratio of the first etching baffle layer to silicon so as to finish the etching of the shared contact hole. According to the method for manufacturing the SRAM shared contact hole, disclosed by the invention, a sidewall below the shared contact hole after etching is still kept, and the shared contact hole is not directly stopped on the lightly doped region so that the current leakage of the SRAM is reduced.

Description

technical field [0001] The invention relates to a method for preparing a semiconductor device, in particular to a method for forming a shared contact hole of a static random access memory (SRAM) and the SRAM device prepared by the method. Background technique [0002] With the continuous development of microelectronics technology, memory presents a development trend of high integration, high speed and low power consumption. Compared with DRAM, static random read-write memory (SRAM) can save the data stored in the internal standard without refreshing the circuit, and unlike DRAM, it needs to be brushed and charged at regular intervals, otherwise the internal data will disappear. Therefore, SRAM with better performance. As a member of the memory family, SRAM has made great progress in recent years. As an important product in semiconductor memory, it has been widely used in high-speed data exchange systems such as computers, communications, and multimedia. [0003] However, S...

AI Technical Summary

Problems solved by technology

If the process is not optimized, the sidewall 6 will be completely etched away, and the shared contact hole 31 will stop above the lightly doped region 8. Since the junction depth of the lightly doped region 8 is relatively shallow, it is easy to cause leakage problems

Images