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Hardmask composition and method of forming patterns and semiconductor integrated circuit device including the patterns

A composition and hard mask technology, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problem that the resist cannot provide enough resistance, and achieve the effect of improving optical characteristics and high etching selectivity

Active Publication Date: 2012-07-11
CHEIL IND INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, in some photolithographic imaging methods, the resist used does not provide sufficient resistance to effectively transfer the intended pattern to the layer on the other side of the resist during the subsequent etching process.

Method used

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  • Hardmask composition and method of forming patterns and semiconductor integrated circuit device including the patterns
  • Hardmask composition and method of forming patterns and semiconductor integrated circuit device including the patterns
  • Hardmask composition and method of forming patterns and semiconductor integrated circuit device including the patterns

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 1

[0128] A 1 L three-necked flask with mechanical stirrer and condenser was immersed in a 90°C oil thermostat. Then, 30.6 g (0.1 mol) of hydroxymethylbenzoperylene, 57.19 g (0.3 mol) of 2-naphthoyl chloride, and 79.8 g (0.6 mol) of aluminum trichloride were added to 1000 g of toluene. The solution was stirred with a stirrer for 10 hours to conduct a reaction. When the reaction was complete, aluminum trichloride was removed with water to obtain a compound, and 37.83 g (1.0 mol) of sodium borohydride was added to the compound. The mixture was reacted for 17 hours. After the reaction, reaction by-products were removed with a mixture of water and methanol, thereby obtaining an aromatic ring-containing compound represented by the following Chemical Formula 1a.

[0129] The molecular weight of the aromatic ring-containing compound was 770.

[0130] [chemical formula 1a]

[0131]

Synthetic example 2

[0133] An aromatic ring-containing compound represented by the following chemical formula 1b was prepared according to the same method as in Synthesis Example 1, except that 25.2 g (0.1 mol) of perylene (perylene) was used instead of 30.6 g (0.1 mol) of methylol Benzoperylene, and 26.4 g (0.1 mol) of pyrenoyl chloride was used instead of 57.19 g (0.3 mol) of 2-naphthoyl chloride.

[0134] The molecular weight of the aromatic ring-containing compound was 498.

[0135] [chemical formula 1b]

[0136]

Synthetic example 3

[0138] By replacing 30.6g (0.1mol) of hydroxymethylbenzoperylene with 27.6g (0.1mol) of benzoperylene, and replacing 57.19g (0.3mol) of 2-naphthoyl chloride with 79.2g (0.3mol) of pyreneyl chloride, according to the synthesis An aromatic ring-containing compound represented by the following Chemical Formula 1c was prepared in the same manner as in Example 1.

[0139] The molecular weight of the aromatic ring-containing compound was 966.

[0140] [chemical formula 1c]

[0141]

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Abstract

The invention provides a hardmask composition, including an aromatic ring-containing compound and a solvent represented by the following Chemical Formula 1. In the Chemical Formula 1, A, R1 to R6, X1 to X6 and n1 to n6 are all same as specifically defined in the description. The invention also provides a method of forming patterns using the hardmask composition, and a semiconductor integrated circuit device including the patterns formed by the method. The hardmask composition of the invention may provide high etching selectivity and improved optical properties while ensuring resistance for multi-etching process.

Description

technical field [0001] Provided are a hard mask composition, a method of forming a pattern using the same, and a semiconductor integrated circuit device including the pattern. Background technique [0002] Industrial fields including microelectronics fabrication as well as microstructural fabrication (eg micromechanics, magnetoresistive heads, etc.) require chips comprising many circuits with patterns of reduced size. [0003] Efficient photolithography is important in reducing the pattern size. [0004] Photolithography affects the fabrication of microstructures not only in terms of imaging a pattern directly on a predetermined substrate, but also in the fabrication of the masks typically used for such imaging. [0005] Typical photolithographic methods include a method of forming a patterned resist layer by exposing a radioactive radiation-sensitive resist to image-forming radioactive rays. [0006] Subsequently, an image is obtained by developing the exposed resist laye...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/09G03F7/00G03F7/11
CPCH01L21/02118H01L21/31144H01L21/02282G03F7/094H01L21/0271
Inventor 宋知胤金旼秀田桓承吴丞培崔有廷
Owner CHEIL IND INC
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