CMP (chemical mechanical polishing) liquid with high polishing rate for sapphire supporting base

Abstract

The invention discloses a CMP (chemical mechanical polishing) liquid with a high polishing rate for a sapphire supporting base. The CMP liquid comprises a grinding material, a pH value conditioning agent, a surface active agent, foam killer and deionized water, wherein taking the total weight of the CMP liquid as the criterion, the contents of the materials by weight percent are 1 to 50 percent of grinding material, 0.005 to 1 percent of surface active agent, and 20 to 200 ppm of foam killer respectively. Through the adoption of the CMP liquid, the sapphire supporting base can be polished in such a manner that the roughness of the sapphire supporting base is smaller than 0.2 nm, the polishing rate is larger than 5 MuM / h, and surface defects of concave pits, protrusions, scratches and the like can be eliminated effectively.

Description

technical field

[0001] The invention belongs to the technical field of chemical mechanical polishing, and relates to a chemical mechanical polishing liquid, in particular to a chemical mechanical polishing liquid for sapphire substrates and an application thereof. Background technique

[0002] Sapphire is currently the most common LED substrate material. As a substrate material, its crystal surface requires ultra-smoothness. The quality of LED devices largely depends on the surface processing of the sapphire substrate, and chemical mechanical polishing (CMP) is currently the most common surface processing technology. One of the most critical consumables in the CMP process is polishing fluid, whose performance directly affects the surface quality after processing. At present, the sapphire CMP in the industry uses silicon oxide polishing fluid. The most prominent problem is the low polishing rate and long processing cycle. In order to reduce processing costs and improve proc...

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