CMP (chemical mechanical polishing) liquid with high polishing rate for sapphire supporting base

A sapphire substrate, chemical-mechanical technology, applied in polishing compositions containing abrasives, etc., can solve the problems of low polishing rate and unsatisfactory surface quality, and achieve the effect of eliminating pits

Active Publication Date: 2012-07-18
SHANGHAI XINANNA ELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to overcome the above-mentioned deficiencies in the prior art, provide a kind of chemical mechanical polishing liquid for sapphire substrate, to solve the technology that the polishing rate is low in the polishing process of existing sapphire substrate material, and its surface quality can not meet the requirements question

Method used

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  • CMP (chemical mechanical polishing) liquid with high polishing rate for sapphire supporting base
  • CMP (chemical mechanical polishing) liquid with high polishing rate for sapphire supporting base
  • CMP (chemical mechanical polishing) liquid with high polishing rate for sapphire supporting base

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-4

[0026] Under the condition of mechanical stirring, add the required amount of colloidal silicon dioxide into deionized water to disperse and dilute, then add pH regulator, surfactant, and defoamer in sequence, and stir well. The experimental samples of Examples 1-4 and Comparative Examples 1-2 were prepared by this method, and their specific proportions are shown in Table 1.

[0027] Table 1

[0028]

[0029] The polishing conditions for chemical mechanical polishing of the sapphire substrate using the above polishing solution are shown in Table 2:

[0030] Table 2

[0031]

[0032] After polishing, the sapphire substrate was washed and dried, and then the morphology and polishing rate of the substrate surface were measured. Use a spiral micrometer and a balance to measure the thickness difference and quality difference before and after polishing to evaluate the polishing rate, and use an atomic force microscope to measure the sapphire substrate to obtain the roughness...

Embodiment 5-7

[0038] Under the condition of mechanical stirring, add the required amount of colloidal silicon dioxide into deionized water to disperse and dilute, then add pH regulator, surfactant, and defoamer in sequence, and stir well. The experimental samples of Examples 1-4 and Comparative Examples 1-2 were prepared by this method, and their specific proportions are shown in Table 4.

[0039] Table 4

[0040]

[0041] The sapphire substrate was chemically mechanically polished using the polishing solution of Examples 5-7. After polishing, the sapphire substrate was washed and dried, and then the morphology and polishing rate of the substrate surface were measured. Use a spiral micrometer and a balance to measure the thickness difference and quality difference before and after polishing to evaluate the polishing rate, and use an atomic force microscope to measure the sapphire substrate to obtain the roughness Ra value. The results obtained are shown in Table 5.

[0042] table 5

...

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Abstract

The invention discloses a CMP (chemical mechanical polishing) liquid with a high polishing rate for a sapphire supporting base. The CMP liquid comprises a grinding material, a pH value conditioning agent, a surface active agent, foam killer and deionized water, wherein taking the total weight of the CMP liquid as the criterion, the contents of the materials by weight percent are 1 to 50 percent of grinding material, 0.005 to 1 percent of surface active agent, and 20 to 200 ppm of foam killer respectively. Through the adoption of the CMP liquid, the sapphire supporting base can be polished in such a manner that the roughness of the sapphire supporting base is smaller than 0.2 nm, the polishing rate is larger than 5 MuM / h, and surface defects of concave pits, protrusions, scratches and the like can be eliminated effectively.

Description

technical field [0001] The invention belongs to the technical field of chemical mechanical polishing, and relates to a chemical mechanical polishing liquid, in particular to a chemical mechanical polishing liquid for sapphire substrates and an application thereof. Background technique [0002] Sapphire is currently the most common LED substrate material. As a substrate material, its crystal surface requires ultra-smoothness. The quality of LED devices largely depends on the surface processing of the sapphire substrate, and chemical mechanical polishing (CMP) is currently the most common surface processing technology. One of the most critical consumables in the CMP process is polishing fluid, whose performance directly affects the surface quality after processing. At present, the sapphire CMP in the industry uses silicon oxide polishing fluid. The most prominent problem is the low polishing rate and long processing cycle. In order to reduce processing costs and improve proc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
Inventor 张泽芳刘卫丽宋志棠
Owner SHANGHAI XINANNA ELECTRONICS TECH
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