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Manufacture method of target material structure

A production method and target technology, which are applied in metal material coating process, ion implantation plating, liquid chemical plating and other directions, can solve the problems of failing to meet the requirements of semiconductor targets, low bonding strength, etc., and achieve high bonding strength , to achieve the effect of industrial production

Active Publication Date: 2013-12-11
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Claims
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Problems solved by technology

[0006] The problem solved by the invention is that the bonding strength of the direct welding of molybdenum or molybdenum alloy target material and the back plate is not high, which cannot meet the requirements of semiconductor target material

Method used

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  • Manufacture method of target material structure
  • Manufacture method of target material structure

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Embodiment Construction

[0038] The production of existing molybdenum or molybdenum alloy target components is to directly weld molybdenum or molybdenum alloy and dissimilar metal (such as copper, copper alloy, aluminum or aluminum alloy) back plate, which will cause unstable welding quality of the two (such as welding combination The strength is weak), which cannot meet the requirements of semiconductor targets.

[0039] An embodiment of the present invention provides a method for manufacturing a target assembly, figure 1 It is a schematic flow chart of manufacturing a target structure according to an embodiment of the present invention. Such as figure 1 as shown,

[0040] Step S11, providing a target material, the target material is molybdenum or molybdenum alloy;

[0041] Step S12, performing a sandblasting process on the surface of the target to be welded;

[0042] Step S13, performing activation treatment on the surface to be welded of the target;

[0043] Step S14, performing induction plat...

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Abstract

The invention provides a manufacture method of a target material structure, which comprises the following steps of: providing target material, wherein the target material is molybdenum or molybdenum alloy; carrying out the sand blasting technology on the to-be-welded surface of the target material; activating the to-be-welded surface of the target material; carrying out plating guide treatment on the to-be-welded surface of the target material; by the chemical plating technology, forming a metal plating layer on the to-be-welded surface of the target material subjected to plating guide treatment; and welding the chemically plated target material to a back plate. The metal plating layer is chemically plated on to-be-welded the surface of the target material made from the molybdenum or the molybdenum alloy, and the metal plating layer is taken as an intermediary medium, so that the target material and the back plate are firmly combined after being welded, and the target material is higher in combination strength. According to the manufacture method, the technological process for chemically plating the metal plating layer on the to-be-welded surface of the target material made from the molybdenum or the molybdenum alloy stably is explored, and the industrial production is realized.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing a target structure. Background technique [0002] Generally, the target assembly is composed of a target meeting the sputtering performance and a back plate combined with the target and having a certain strength. The back plate can play a supporting role when the target assembly is assembled to the sputtering base, and can conduct heat. In the sputtering process, the working environment of the target assembly is harsh, for example, the target assembly has a high operating temperature; and one side of the target assembly is forced to cool with cooling water, while the other side is at -9 In the high vacuum environment of Pa, a huge pressure difference is formed on the opposite sides of the target assembly; moreover, the target assembly is in a high-voltage electric field and magnetic field, and will be bombarded by various particles. In such ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34C23C18/18
Inventor 潘杰姚力军王学泽潘靖
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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