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Patterned substrate for aluminum nitride (AlN) crystal growth

A technology for patterning substrates and crystal growth, applied in crystal growth, single crystal growth, single crystal growth and other directions, can solve the problems that SiC seed crystal affects the quality of AlN crystal and the high cost of AlN seed crystal, and achieves large diameter and defects. low density effect

Inactive Publication Date: 2012-07-18
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to solve the problem that in the existing method of preparing large-size AlN crystals using seed crystals, the cost of AlN seed crystals is high, and the SiC seed crystals are easily decomposed at high temperatures and affect the quality of AlN crystals. The present invention provides a method for AlN crystals. The grown patterned substrate, the patterned substrate of the present invention has the characteristics of low cost and easy manufacture, and the AlN crystal grown on the patterned substrate by PVT method has the advantages of large diameter and low defect density

Method used

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  • Patterned substrate for aluminum nitride (AlN) crystal growth
  • Patterned substrate for aluminum nitride (AlN) crystal growth
  • Patterned substrate for aluminum nitride (AlN) crystal growth

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specific Embodiment approach 1

[0018] Specific Embodiment 1: This embodiment is a patterned substrate for AlN crystal growth. The patterned substrate for AlN crystal growth is to embed evenly arranged graphic units on the substrate, and the shape of the graphic units is a regular hexagonal truss , side length is a 2 The upper bottom surface of is on the plane where the substrate surface is located, and the side length of the lower bottom surface is a 1 , the height of the graphics unit is c 1 , where a 1 =n 1 a,c 1 =n 1 c, a 2 =n 2 a 1 , a and c are the unit cell parameters of the hexagonal AlN crystal, 01 ≤15×10 7 , 12 ≤3.

[0019] The side length a of the bottom surface of the graphic unit described in this embodiment1 and height c 1 n is the corresponding AlN unit cell parameter 1 times, 01 ≤15×10 7 , n 1 The value of includes but not limited to (0, 15×10 7 ] an integer in the interval.

[0020] In this embodiment n 2 The value of includes but not limited to integers in the interval (1,...

specific Embodiment approach 2

[0024] Specific embodiment two: the difference between this embodiment and specific embodiment one is n 1 is an integer, n 2 is an integer. Other parameters are the same as in the first embodiment.

[0025] In this embodiment n 1 is (0, 15×10 7 ) an integer in the interval, i.e. the side length a of the bottom surface of the graphic unit 1 and height c 1 is an integer multiple of the corresponding AlN unit cell parameter (n 1 times), the side length of the upper bottom surface of the graphic unit a 2 is an integer multiple of the AlN unit cell parameter a (n 1 n 2 times).

[0026] with n 1 , n 2 When it is a non-integer multiple, when n 1 , n 2 The pattern unit when is an integer will be more beneficial to control the growth process of the AlN crystal, which is shown in: due to the limitation on the size, when the AlN single crystal is deposited at the unit pattern, it is more likely to form several integer AlN unit cells, while The unit cells will also be arrang...

specific Embodiment approach 3

[0027] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that the patterned substrates for AlN crystal growth are evenly arranged in one of regular hexagons, rhombuses, and regular triangles, or a combination of several of them. graphics unit. Other parameters are the same as those in Embodiment 1 or Embodiment 2.

[0028] In this embodiment, a schematic diagram of a patterned substrate for AlN crystal growth with patterned units evenly arranged in a regular hexagonal manner is as follows image 3 shown.

[0029] In this embodiment, a schematic diagram of a patterned substrate for AlN crystal growth with pattern units evenly arranged in a rhombus manner is as follows Figure 4 shown.

[0030] In this embodiment, a schematic diagram of a patterned substrate on which patterned units are evenly arranged in an equilateral triangle pattern for AlN crystal growth is as follows Figure 5 shown.

[0031] In this embodiment, a schematic diagram of a pat...

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Abstract

The invention relates to an patterned substrate for aluminum nitride (AlN) crystal growth, which resolves the problems that at present a method using seed crystals to prepare large AlN crystals is high in cost of AlN seed crystals, and quality of AlN crystal can be affected by the fact that SiC seed crystals are prone to resolve at high temperature. The patterned substrate is formed by the fact that evenly-distributed image units are embedded on the substrate, the shape of each image unit is in a regular six prism frustum, an upper bottom face with side length of a2 is arranged on the plane where the substrate is arranged, the side length of a lower bottom face is a1, and the height of each image unit is c1, wherein the a1 is equal to n1a, the c1 is n1c, the a2 is n2a1, a and c are lattice parameters of the hexagon AlN crystals, the n1 is larger than 0 and equal to or smaller than 15*107, and the n2 is larger than 1 and equal to or smaller than 3. The patterned substrate is simple in preparation process. The grown AlN crystal has the advantages of being large in diameter and low in defect density.

Description

technical field [0001] The invention relates to a patterned substrate for AlN crystal growth. Background technique [0002] AlN crystal is an important wide bandgap (6.2eV) semiconductor material with high thermal conductivity (330W / m.K), high resistivity, good UV transmittance and high radiation resistance. , High-power electronic devices, optoelectronic devices, laser devices and other semiconductor devices have a good application prospect. [0003] A large number of studies have proved that the PVT method is one of the most effective ways to prepare large-sized AlN crystals. This method evaporates the material in a high-temperature area and utilizes the diffusion and transport of vapor to generate crystals in a low-temperature area. Using this method, the crystal raw material can be used to nucleate spontaneously to grow a single crystal, and the seed crystal can also be used to make the crystal raw material deposit on the seed crystal after sublimation to grow into a si...

Claims

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Application Information

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IPC IPC(8): C30B29/38C30B11/00C30B11/14C30B28/06
Inventor 韩杰才宋波赵超亮张幸红张化宇张宇民
Owner HARBIN INST OF TECH
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