Patterned substrate for aluminum nitride (AlN) crystal growth
A technology for patterning substrates and crystal growth, applied in crystal growth, single crystal growth, single crystal growth and other directions, can solve the problems that SiC seed crystal affects the quality of AlN crystal and the high cost of AlN seed crystal, and achieves large diameter and defects. low density effect
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[0018] Specific embodiment 1: This embodiment is a patterned substrate for AlN crystal growth. The patterned substrate for AlN crystal growth is to embed uniformly arranged pattern units on the substrate, and the shape of the pattern unit is a regular hexagonal pyramid. , The side length is a 2 The upper bottom surface is on the plane of the substrate surface, and the side length of the bottom bottom surface is a 1 , The height of the graphic unit is c 1 , Where a 1 = N 1 a, c 1 = N 1 c, a 2 = N 2 a 1 , A and c are the unit cell parameters of the hexagonal AlN crystal, 01 ≤15×10 7 , 12 ≤3.
[0019] The side length a of the bottom surface of the graphics unit described in this embodiment 1 And the height is c 1 N is the corresponding AlN unit cell parameter 1 Times, 01 ≤15×10 7 , N 1 The value of includes but not limited to (0,15×10 7 ] An integer in the interval.
[0020] In this embodiment, n 2 The value of includes but is not limited to integers in the interval (1, 3).
[0021] Th...
Example Embodiment
[0024] Specific embodiment two: This embodiment is different from the specific embodiment one in that n 1 Is an integer, n 2 Is an integer. Other parameters are the same as in the first embodiment.
[0025] In this embodiment, n 1 Is (0, 15×10 7 ) An integer in the interval, that is, the side length a of the bottom surface of the graphic unit 1 And the height is c 1 Is an integer multiple of the corresponding AlN unit cell parameter (n 1 Times), the top and bottom side length of the graphics unit a 2 Is an integer multiple of the AlN unit cell parameter a (n 1 ·N 2 Times).
[0026] With n 1 , N 2 Compared with non-integer multiples, when n 1 , N 2 The pattern unit when it is an integer will be more conducive to controlling the growth process of AlN crystal. This is reflected in: due to the size limitation, when AlN single crystal is deposited at the unit pattern, it is more likely to form several integer AlN unit cells, and The unit cells will also be arranged more regularly, which...
Example Embodiment
[0027] Specific embodiment three: This embodiment is different from specific embodiment one or two in that the patterned substrate for AlN crystal growth is uniformly arranged in one or a combination of regular hexagons, rhombuses and regular triangles. Graphic unit. Other parameters are the same as in the first or second embodiment.
[0028] In this embodiment, a schematic diagram of a patterned substrate for AlN crystal growth with patterned units uniformly arranged in a regular hexagon is as follows image 3 Shown.
[0029] In this embodiment, a schematic diagram of the patterned substrate for AlN crystal growth with the pattern units uniformly arranged in a diamond manner is as follows Figure 4 Shown.
[0030] In this embodiment, a schematic diagram of a patterned substrate on which AlN crystals grow with pattern units uniformly arranged in an equilateral triangle is as follows: Figure 5 Shown.
[0031] In this embodiment, a schematic diagram of a patterned substrate for AlN cr...
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