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Semiconductor device and preparation method thereof

A semiconductor and device technology, applied in the field of semiconductor devices and their fabrication

Active Publication Date: 2012-07-18
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Such defects have a detrimental effect on the resulting crystal and thus on the resulting device

Method used

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  • Semiconductor device and preparation method thereof
  • Semiconductor device and preparation method thereof
  • Semiconductor device and preparation method thereof

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Embodiment Construction

[0022] Hereinafter, the present invention is described by means of specific embodiments shown in the drawings. It should be understood, however, that these descriptions are exemplary only and are not intended to limit the scope of the present invention. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present invention.

[0023] A schematic diagram of a layer structure according to an embodiment of the invention is shown in the drawing. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, sizes, and relative positions can be...

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Abstract

The application discloses a semiconductor device and a preparation method of the semiconductor device. The preparation method comprises the following steps: providing a first semiconductor layer; forming a trench in the first semiconductor layer, wherein at least a part of the bottom of the side wall of the trench inclines towards the outer side of the trench; filling a dielectric substance in the trench; thinning the first semiconductor layer so as to make the first semiconductor layer be sunken relative to the dielectric substance; and carrying out epitaxial growth on the first semiconductor layer to form a second semiconductor layer, wherein the material of the first semiconductor layer is different from the material of the second semiconductor layer. According to the semiconductor device and the preparation method provided by invention, defects generated in a heteroepitaxy growth process can be effectively inhibited.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a semiconductor device including a heteroepitaxial structure and a manufacturing method thereof. Background technique [0002] Generally speaking, heteroepitaxy refers to the epitaxial growth of another crystalline material on a crystalline material, such as the epitaxial growth of germanium (Ge), III-V compound semiconductors, etc. on a silicon (Si) substrate. With the continuous development of semiconductor technology, heteroepitaxy technology has become more and more important. For example, depositing Ge with high carrier mobility on a Si substrate as a channel region material can form a high-performance Ge channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET). In addition, deposition of materials such as III-V compound semiconductors on Si substrates facilitates the integration of optoelectronic devices with Si complementary metal-oxide-semiconductor (CMOS) process...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/20H01L29/06
CPCH01L21/02647H01L21/02639
Inventor 骆志炯朱慧珑尹海洲
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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