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High-voltage-resistance junction field effect transistor

A field-effect transistor, high-voltage technology, applied in transistors, electrical components, circuits, etc., can solve problems such as the inability to make high-voltage junction field effect transistors

Active Publication Date: 2014-04-16
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This traditional junction field effect transistor forms an off-state breakdown voltage through the withstand voltage of the PN junction. Under the current deep submicron (0.25μm and below) shallow junction process, it is impossible to make a junction field effect that withstands high voltage. Tube

Method used

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Embodiment Construction

[0013] see figure 2 , which is a high-voltage resistant junction field effect transistor of the present invention, taking n-channel as an example. There is an n-well 11 in the p-type substrate 10, and the surface of the n-well 11 has silicon oxides 121, 122, 123, 124, and these silicon oxides serve as field oxygen isolation structures or shallow trench isolation structures. In the n-well 11 there is a p-well 13 between silicon oxides 122 and 123 . In the n-well 11 and between the silicon oxides 123 and 124 there is an n-well 14 whose doping concentration is greater than that of the n-well 11 . There is a heavily doped n-well 15 on the surface of the n-well 11 and between the silicon oxide 121 and 122 , and the doping concentration of the n-well 15 is greater than that of the n-well 11 . There is a heavily doped p-well 16 on the surface of the p-well 13 , and the doping concentration of the p-well 16 is greater than that of the p-well 13 . There is a heavily doped n well 17...

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Abstract

The invention discloses a high-voltage-resistance junction field effect transistor. The high-voltage-resistance junction field effect transistor is improved on the basis of the existing junction field effect transistor, and particularly, polycrystalline silicon field pole plate structures are additionally arranged at one end of a gate electrode close to a drain electrode and at the drain electrode, so that the charge distribution and vector electric field distribution in a well II and a well III can be improved, further, the off-state breakdown voltage of the junction field transistor is increased, and the high-voltage-resistance junction field transistor can be manufactured.

Description

technical field [0001] The invention relates to a junction field effect transistor. Background technique [0002] Field Effect Transistor (Field Effect Transistor, FET, referred to as Field Effect Transistor) is a voltage amplifying device, which has three electrodes: gate (gate), drain (drain), source (source), and is usually in fabricated on a single crystal substrate. [0003] There are two basic types of field effect transistors: junction (JFET) and metal-oxide (MOSFET). Among them, the junction field effect transistor is divided into two types: n-channel and p-channel. In the following discussion, the n-channel junction field effect transistor is mainly taken as an example. The n-region, p-region, and all voltage positive and negative and current directions of the p-channel junction field effect transistor are just reversed. [0004] see figure 1 , which is a schematic cross-sectional view of an existing n-channel junction field effect transistor. There is an n-wel...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/80H01L29/40
Inventor 张帅董科
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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