36results about How to "Improve charge distribution" patented technology

The invention relates to a method for preparing composite modified montmorillonite sorbent. The method comprises the following steps: adding montmorillonite suspension into hydroxy aluminum pillared solution; then, adding polyvinyl alcohol into the mixed solution; heating and stirring the mixed solution under rising temperature; washing the mixed solution until Cl<-> free after the mixed solutionis cooled; centrifuging, drying and grinding the mixed solution to obtain a powdered product; and calcining the powdered product under nitrogen atmosphere, refluxing the powdered product by sulphuricacid, washing filtered solid to obtain the composite modified montmorillonite sorbent. The invention can acquire the composite modified montmorillonite sorbent with specific surface area up to 192m<2> / g and evenly distributed bore diameter through low-price and available raw materials and simple method, and ensures that the maximum adsorption amount of the sorbent when adsorbing Cd<2+> containingsolution reaches 27.92mg / g.

The invention relates to a normal-temperature desulfurization dearsenic agent and a preparation method thereof. The invention mainly aims at solving problems of high bulk density, low sulfur capacity and low arsenic capacity of desulfurization dearsenic agents in prior arts. The desulfurization dearsenic agent provided by the invention comprises the following components, by weight: (a) 1-10 parts of aurichalcite, (10) 10-50 parts of copper oxide, (c) 10-60 parts of zinc oxide, and (d) 0.01-3 parts of rare earth metal R. With the above technical scheme, the problem is well solved. The method can be applied in the purification of natural gas, synthetic gas, light gas-liquid hydrocarbons, and the like.

A power wafer includes an enclosure that houses an energy plate such as a battery, capacitor, super-capacitor or other type of electrical energy storage device. A power wafer uses conductive infusions to make internal electrical connections. In some embodiments, the power wafer has an enclosure formed of a top structure and a bottom structure, which are configured to snap together. The bottom structure has an energy plate void and conductive infusion voids. In some embodiments, the infusions have carbon nanotubes that are magnetically aligned to increase the electrical and thermal conductivity of the infusions. In certain embodiments, the enclosure is configured to hold multiple energy plates in parallel and / or in series to increase the amperage and / or voltage of the power wafer. When the plates are stacked in parallel, an insulating barrier is placed between the plates.

The invention belongs to the field of preparation of lithium-ion battery materials and particularly relates to high-cycle nickel-cobalt-manganese ternary material and a preparation method thereof; the high-cycle nickel-cobalt-manganese ternary material is mainly characterized in that the cycle performance of the material is improved by coating nickel-cobalt-manganese ternary material with a layer of nitrogen-phosphorus-containing compound to improve the compatibility of the material with electrolyte. The preparation method comprises: adding a nitrogen-phosphorus-containing polymer and a binder to 1-methyl-2-pyrrolidinone, stirring well, adding ternary material, stirring well, carbonizing, and soaking in ethylene carbonate solution to obtain the nickel-cobalt-manganese ternary material with nitrogen-phosphorus coating. The material prepared herein has surface charge distribution that is improved by means of nitrogen doping in the nitrogen-phosphorus compound, electron transfer performance is improved, quasi-Faraday effect is achieved, and capacity is given to better play; in addition, lattice structural stability of the material and the compatibility of the material with electrolyte are improved by the aid of phosphorus doping; the ethylene carbonate adsorbed by the material can provide improved compatibility of the material with electrolyte, the synergy of the doped nitrogen-phosphorus and the ethylene carbonate can be given to play, and the cycle performance of the material is improved.

The invention discloses a composite deoiling agent used for sewage treatment. The compositions in percentage by weight of the composite deoiling agent are 10 to 20 percent of liquid nano water purifying agent, 40 to 70 percent of aluminum sulphate, 5 to 15 percent of magnesium chloride, 4 to 15 percent of magnesium hydroxide, 1 to 5 percent of diatomite and 0.5 to 5 percent of acrylamide. The composite deoiling agent makes use of the advantages of both inorganic flocculating agent and organic flocculating agent, and is characterized in that chemical reaction is carried out during dissolution in use, and a generated novel ecological inorganic flocculating agent Al13 has high activity; meanwhile, polyacrylamide plays a role in bridging so as to increase adsorption active sites and enlarge alum particles formed by flocculation in the presence of active particles with strong adsorbability; no novel solid particle is generated during medicament dissolution, and diatomite is low in price; and the composite deoiling agent is suitable for the treatment of various oily industrial wastewater and domestic sewage which can cause severe pollution. Moreover, the composite deoiling agent has the characteristics of lower dose, high deoiling efficiency, simple preparation, low cost, and the like, and is particularly suitable for the pretreatment of various oily sewages discharged from oil refinery, oil field, and the like.

The invention discloses a high-voltage-resistance junction field effect transistor. The high-voltage-resistance junction field effect transistor is improved on the basis of the existing junction field effect transistor, and particularly, polycrystalline silicon field pole plate structures are additionally arranged at one end of a gate electrode close to a drain electrode and at the drain electrode, so that the charge distribution and vector electric field distribution in a well II and a well III can be improved, further, the off-state breakdown voltage of the junction field transistor is increased, and the high-voltage-resistance junction field transistor can be manufactured.

The invention relates to a purifying agent for sulfur, arsenic and phosphorus and a preparation method for the purifying agent. The invention is mainly to solve the problems of high bulk density and low adsorption capacity of a purifying agent in the prior art. The purifying agent for sulfur, arsenic and phosphorus provided by the invention comprises the following components in parts by weight: a)1 to 10 parts of aurichalcite; b) 10 to 50 parts of copper oxide; c) 10 to 60 parts of zinc oxide; d) 0.1 to 10 parts of nickel oxide; e) 0.1 to 5 parts of ferric oxide; and f) 0.01 to 3 parts of rare earth metal R. With a technical scheme of the invention, the purifying agent for sulfur, arsenic and phosphorus provided by the invention well solves the above-mentioned problems, and can be used for purification of natural gas, synthesis gas, light gaseous and liquid hydrocarbons, etc.

The invention discloses an organic solar cell with metal-mesh-nested heterogeneous junctions and a preparation method for the organic solar cell, and relates to the field of organic solar cells. The organic solar cell comprises a transparent substrate, a transparent positive electrode, a hole transport layer, a donor material layer, an ultra-thin metal mesh layer, an acceptor material layer, an electronic buffer layer and a negative electrode, wherein the continuous metal mesh nesting layer is clamped between the donor material layer and the acceptor material layer, and can form local schottky junctions with the N-type acceptor material layer, so that double built-in electric fields are formed on the basis of conventional heterogeneous junctions, the stagewise diffusion of electrons from an n-type material to a p-type material and the diffusion of holes from the p-type material to the n-type material are facilitated, the structural thicknesses of the heterogeneous junctions are increased, the separation efficiency of photo-generated excitons is improved, and the conversion efficiency of the organic solar cell is finally improved.

The invention relates to a purifying agent for sulfur, arsenic and phosphorus and a preparation method for the purifying agent. The invention is mainly to solve the problems of high bulk density and low adsorption capacity of a purifying agent in the prior art. The purifying agent for sulfur, arsenic and phosphorus provided by the invention comprises the following components in parts by weight: a)1 to 10 parts of aurichalcite; b) 10 to 50 parts of copper oxide; c) 10 to 60 parts of zinc oxide; d) 0.1 to 10 parts of nickel oxide; and e) 0.1 to 5 parts of ferric oxide. With a technical scheme of the invention, the purifying agent for sulfur, arsenic and phosphorus provided by the invention well solves the above-mentioned problems, and can be used for purification of natural gas, synthesis gas, light gaseous and liquid hydrocarbons, etc.

The invention relates to the field of cucumber plantation technology, specifically to a seed treatment method for enhancing disease resistance of cucumber. The method comprises the following steps: S1, selection of seeds; S2, alkali treatment; S3, nutrient solution treatment; S4, electric field treatment; S5, pregermination. By the use of the above method, disease resistance and stress resistanceof seeds are effectively enhanced, seed growth is effectively promoted, absorption power of seeds is enhanced, nutrient loss or waste is further effectively avoided, and undesirable phenomena such assoil eutrophication or hardening, etc. due to nutrient residues are prevented.

The invention discloses a mineral leaching process of bastnaesite. The mineral leaching process comprises the following steps of: (1) leaching bastnaesite with hydrochloric acid for the first time, and adding a flocculating agent to obtain first leaching residue and first leaching liquid; (2) performing alkaline transfer on the first leaching residue obtained in step (1) by using sodium hydroxide to obtain alkaline transfer residue; (3) leaching the alkaline transfer residue obtained in step (2) by hydrochloric acid for the second time, and adding the flocculating agent to obtain second leaching liquid and second leaching residue; (4) washing the secondary leaching residue obtained in step (3) by using clean water to obtain secondary leaching residue washing water; (5) preparing the flocculating agents used in step (1) and (3) through the secondary leaching residue washing water obtained in step (4); (6) mixing the first leaching liquid obtained in step (1) and the second leaching liquid obtained in step (3); and extracting and separating rare earth. The mineral leaching process is mainly applied to bastnaesite.

The invention discloses a new low-voltage, high-performance non-volatile memory based on discrete nanographene floating gates, which includes: a substrate, a tunneling layer, a storage layer, a barrier layer and a gate electrode. The storage layer is a discrete Nanographene uses the density and size modulation of nanographene and the energy band modulation of the tunneling layer to optimize the charge distribution and retention characteristics in the storage layer. The present invention realizes a low-energy consumption non-volatile flash memory under low-voltage operation by introducing nano-graphene discrete floating gates, effectively controlling the density and size of nano-graphene, and modulating the energy band structure of the tunneling oxide layer. , which can optimize the charge distribution and retention characteristics in the storage layer to achieve high-performance operation of the device.

A power wafer includes an enclosure that houses an energy plate such as a battery, capacitor, super-capacitor or other type of electrical energy storage device. A power wafer uses conductive infusions to make internal electrical connections. In some embodiments, the power wafer has an enclosure formed of a top structure and a bottom structure, which are configured to snap together. The bottom structure has an energy plate void and conductive infusion voids. In some embodiments, the infusions have carbon nanotubes that are magnetically aligned to increase the electrical and thermal conductivity of the infusions. In certain embodiments, the enclosure is configured to hold multiple energy plates in parallel and / or in series to increase the amperage and / or voltage of the power wafer. When the plates are stacked in parallel, an insulating barrier is placed between the plates.

The invention discloses an N-pyrimidinyl-norcantharidin amic acid lanthanum (III) complex and a preparation method thereof. A chemical formula of the N-pyrimidinyl-norcantharidin amic acid lanthanum (III) complex is [Ln(HL2)(NO3)(H2O)2](NO3).2H2O, wherein Ln represents lanthanum and HL2 represents an N-pyrimidinyl-norcantharidin amic acid ligand. The N-pyrimidinyl-norcantharidin amic acid lanthanum (III) complex synthesized with the method has relatively strong physiological activity and antioxidation stability.

The invention provides a molybdenum monatomic catalyst and a preparation method and application thereof. The preparation method comprises the following steps: adding a molybdenum source into an electrostatic spinning solution to prepare a precursor mixed solution; performing electrostatic spinning on the precursor mixed solution to form an electrospinning film; and drying the electrospinning film, and subjecting the dried electrospinning film to pre-oxidation treatment and carbonization treatment to obtain the molybdenum atom catalyst. The molybdenum monatomic catalyst prepared by the preparation method can effectively catalyze nitrogen reduction to prepare ammonia.

The invention discloses a 150V-BCD (Binary-Coded Decimal) bulk silicon manufacturing technology and an LCD (Liquid Crystal Display) backlight drive chip. The 150V-BCD bulk silicon manufacturing technology comprises the following steps of: preparing a high-resistance substrate silicon sheet; adding an N-shaped buried layer on a substrate; connecting the N-shaped buried layer by using an NSINKER1 drain structure; extending an N-shaped extension layer; forming an opposite-pass structure with NSINKER2; forming an LDPMOS device region, a Resurf voltage resisting region and a channel connecting region to form a horizontal structure LPMOS high- voltage device; forming a Resurf voltage resisting region, a compensation injection JFET region, a VDNMOS device region and a composite MOS (Metal-Oxide Semiconductor) gate channel; replacing the traditional PISO isolation structure by using a deep-groove isolation structure; using double thin gate oxide (DGO) as gate oxide of a low voltage device; using N+ / P+ as drain injection of all devices; reducing interconnection resistance by using a self-alignment silicide technology (Salicide); forming contact holes; forming device connection by using MET; and using press welding points by using PAD. The LCD backlight drive chip comprises a multilevel charge-pump voltage booster circuit, an EL oscillating circuit, a VSENSE module, a high-voltage conversion module and a full-bridge type drive structure.

The invention relates to an adsorbent for sulfur, arsenic and phosphorus, and a preparation method of the adsorbent, and mainly solves the problems of high bulk density and low adsorption capacity ofadsorbents in the prior art. According to the invention, a technical scheme is used to well solve the problems, wherein the adsorbent for sulfur, arsenic and phosphorus comprises the following components in parts by weight: a) 1-10 parts of aurichalcite, b) 10-50 parts of copper oxide; c) 10-60 parts of zinc oxide; d) 0.1-10 parts of nickel oxide; e) 0.1-5 parts of manganese oxide; and f) 0.01-3 parts of rare earth metal R. The adsorbent can be applied to the purification of natural gas, synthesis gas, light gas liquid hydrocarbons and the like.

The invention discloses a honeycomb metal ceramic bifunctional catalyst, application thereof and a method for preparing hydroxycitronellal. The catalyst is prepared by mixing hydroxyapatite, a catalytic active component 1, a catalytic active component 2, rare earth oxide powder and a pore-forming agent according to a certain ratio, and carrying out spray granulation, extrusion molding and vacuum sintering. The catalyst has the characteristics of good heat resistance, multiple pores, large specific surface area and the like, and meanwhile, dehydrogenation and oxidation reactions are coupled, sothat the dehydrogenation reaction continuously moves forwards, dehydration side reactions are avoided, and the reaction conversion rate and selectivity are improved. The reaction can be carried out under normal pressure, and high-temperature water vapor generated by oxidation can effectively remove carbon deposit on the surface of the catalyst, thereby reducing the generation of high polymers andeffectively prolonging the service life of the catalyst.

The invention discloses a cubic light calcium carbonate filler composition, the components of which are: 100 parts of cubic light calcium carbonate filler and 0.03-0.25 parts of cationic polymer. The invention also discloses a preparation method of the above-mentioned cubic light calcium carbonate filler composition, comprising the following steps: adding the cationic polymer to the cubic light calcium carbonate filler, controlling the temperature at 60-80°C, keeping the temperature for 30-60min, adding water Adjust the solid content to 15‑20%. The invention uses cubic light calcium carbonate as a carrier, and obtains a cubic light calcium carbonate filler composition by adding cationic polymers for mixing modification. After it is filled into the pulp as a filler, it can improve the tensile strength and internal bonding strength of the paper-making sample, and at the same time save the amount of AKD and reduce the cost of papermaking. At the same time, the cationic polymer as a modifier can improve the filler. Retain and promote the sizing effect, so that the ash content and retention rate of the handmade paper sample are improved.

The invention relates to an adsorbent for sulfur, arsenic and phosphorus, and a preparation method of the adsorbent, and mainly solves the problems of high bulk density and low adsorption capacity ofadsorbents in the prior art. According to the invention, a technical scheme is used to well solve the problems, wherein the adsorbent for sulfur, arsenic and phosphorus comprises the following components in parts by weight: a) 1-10 parts of aurichalcite, b) 10-50 parts of copper oxide; c) 10-60 parts of zinc oxide; d) 0.1-10 parts of nickel oxide; e) 0.1-5 parts of manganese oxide; and f) 0.01-3 parts of rare earth metal R. The adsorbent can be applied to the purification of natural gas, synthesis gas, light gas liquid hydrocarbons and the like.

The invention provides a molybdenum single-atom catalyst as well as its preparation method and application. The preparation method comprises: adding a molybdenum source into an electrospinning solution to prepare a precursor mixed solution; performing electrospinning on the precursor mixed solution to form an electrospun film; drying the electrospun film to dry the dried After the electrospun film is subjected to pre-oxidation treatment and carbonization treatment, a molybdenum atom catalyst is obtained. The molybdenum single-atom catalyst prepared by the above preparation method can effectively catalyze the reduction of nitrogen to prepare ammonia.

The invention relates to a method for preparing composite modified montmorillonite sorbent. The method comprises the following steps: adding montmorillonite suspension into hydroxy aluminum pillared solution; then, adding polyvinyl alcohol into the mixed solution; heating and stirring the mixed solution under rising temperature; washing the mixed solution until Cl<-> free after the mixed solutionis cooled; centrifuging, drying and grinding the mixed solution to obtain a powdered product; and calcining the powdered product under nitrogen atmosphere, refluxing the powdered product by sulphuricacid, washing filtered solid to obtain the composite modified montmorillonite sorbent. The invention can acquire the composite modified montmorillonite sorbent with specific surface area up to 192m<2> / g and evenly distributed bore diameter through low-price and available raw materials and simple method, and ensures that the maximum adsorption amount of the sorbent when adsorbing Cd<2+> containingsolution reaches 27.92mg / g.

The invention relates to an adsorbent for sulfur, arsenic and phosphorus, and a preparation method of the adsorbent, and mainly solves the problems of high bulk density and low adsorption capacity ofadsorbents in the prior art. According to the invention, a technical scheme is used to well solve the problems, wherein the adsorbent for sulfur, arsenic and phosphorus comprises the following components in parts by weight: a) 1-10 parts of aurichalcite, b) 10-50 parts of copper oxide; c) 10-60 parts of zinc oxide; d) 0.1-10 parts of nickel oxide; e) 0.1-5 parts of iron oxide; f) 0.1-5 parts of manganese oxide; and g) 0.01-3 parts of rare earth metal R. The adsorbent can be applied to the purification of natural gas, synthesis gas, light gas liquid hydrocarbons and the like.

The invention discloses an integrated protection mesa thyristor and a manufacturing method thereof. The method is characterized by forming a PI glue passivation layer in a certain thickness on a glass passivation layer; and heating the PI glue passivation layer for 100-150 minutes under the temperature of 280-320 degrees and under the protection of high-purity nitrogen to enable the PI glue passivation layer to be imidized and fused with the glass passivation layer so as to form an integrated protection layer. The PI glue passivation layer is covered on the surface of the glass passivation layer of the mesa thyristor; and the glass passivation layer and the PI glue passivation layer form the integrated protection layer. Through the technical scheme above, the glass passivation and PI glue passivation technology are utilized to form the integrated protection layer, thereby effectively improving charge distribution of the passivation layer, effectively reducing leak current of the thyristor and improving reliability of the thyristor.

The invention provides a preparation method of high-fatigue-resistance waste PET (polyethylene terephthalate) plastic modified rubber asphalt concrete, relates to the technical field of asphalt materials, and solves the problem of insufficient fatigue resistance of high-dosage rubber powder modified asphalt concrete in the prior art. According to the preparation method of the high-fatigue-resistance waste PET plastic modified rubber asphalt concrete, charge distribution among asphalt molecules can be effectively improved, so that the prepared modified rubber asphalt has a strong electrostatic force aggregation effect, and the fatigue resistance of the high-fatigue-resistance waste PET plastic modified rubber asphalt concrete is greatly improved. The preparation method is simple in process, small in additive usage amount and low in preparation cost, can effectively improve the anti-fatigue performance of the rubber asphalt, can consume waste plastic bottles, and has remarkable economic benefits, environmental benefits and engineering values.

The invention discloses an N-pyridine-demethyl cantharidin amic acid lanthanum (III) complex and a preparation method thereof. The chemical formula of the N-pyridine-demethyl cantharidin amic acid lanthanum (III) complex is [Ln(HL1)(NO3)(H2O)2](NO3).2H2O, wherein Ln represents lanthanum; and HL1 represents an N-pyridine-demethyl cantharidin amic acid ligand. The synthesized N-pyridine-demethyl cantharidin amic acid lanthanum (III) complex synthetized by the application has relatively high physiological activity and antioxidant stability.

The invention relates to a normal-temperature desulfurization dearsenic agent and a preparation method thereof. The invention mainly aims at solving problems of high bulk density, low sulfur capacity and low arsenic capacity of desulfurization dearsenic agents in prior arts. The desulfurization dearsenic agent provided by the invention comprises the following components, by weight: (a) 1-10 parts of aurichalcite, (10) 10-50 parts of copper oxide, (c) 10-60 parts of zinc oxide, and (d) 0.01-3 parts of rare earth metal R. With the above technical scheme, the problem is well solved. The method can be applied in the purification of natural gas, synthetic gas, light gas-liquid hydrocarbons, and the like.