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Integrated protection mesa thyristor and manufacturing method thereof

A manufacturing method and technology of thyristors, which are applied in the direction of thyristors, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as increased leakage current, achieve the effects of improving reliability, improving charge distribution, and reducing leakage current

Inactive Publication Date: 2016-06-15
江苏东晨电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, too much negative charge will widen the space charge region too much, which may increase the leakage current

Method used

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  • Integrated protection mesa thyristor and manufacturing method thereof
  • Integrated protection mesa thyristor and manufacturing method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Embodiment 1: A kind of manufacture method of integrated protective mesa thyristor, it forms the PI glue passivation layer (1) of certain thickness on the glass passivation layer (4), this PI glue passivation layer (1) is in high-purity nitrogen Under protection, heat at 280-320° C. for 100-150 minutes to imidize the PI glue passivation layer (1) and fuse with the glass passivation layer (4) to form an integrated protective layer.

Embodiment 2

[0030] Embodiment 2: According to the manufacturing method of an integrated protective mesa thyristor described in Embodiment 1, the specific steps are:

[0031] 1. The oxide layer is formed by thermal growth of the chip, and the oxide layer is etched by photolithography for the first time, which is called punch-through lithography, and diffuses to form a punch-through region (9);

[0032] 2. On the basis of the punch-through region (9), use diffusion technology to diffuse the boron-based region on the front and back sides of the chip to form the base region (3) and anode (7);

[0033] 3. On the basis of the base area (3), use photolithography technology to carry out photoetching etching for the second time to the oxide layer, which is called opening the secondary cathode area to form the cathode area (2);

[0034] 4. Use photolithography technology to carry out the third photoetching etching on the oxide layer, which is called opening the mesa groove. Through the method of me...

Embodiment 3

[0040] Embodiment 3: According to the manufacturing method of an integrated protective mesa thyristor described in Embodiment 1, the specific steps are:

[0041] 1. The oxide layer is formed by thermal growth of the chip, and the oxide layer is etched by photolithography for the first time, which is called punch-through lithography, and diffuses to form a punch-through region (9);

[0042] 2. On the basis of the punch-through region (9), use diffusion technology to diffuse the boron-based region on the front and back sides of the chip to form the base region (3) and anode (7);

[0043] 3. On the basis of the base area (3), use photolithography technology to carry out photoetching etching for the second time to the oxide layer, which is called opening the secondary cathode area to form the cathode area (2);

[0044] 4. Use photolithography technology to carry out the third photoetching etching on the oxide layer, which is called opening a mesa groove. Through the method of mesa...

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Abstract

The invention discloses an integrated protection mesa thyristor and a manufacturing method thereof. The method is characterized by forming a PI glue passivation layer in a certain thickness on a glass passivation layer; and heating the PI glue passivation layer for 100-150 minutes under the temperature of 280-320 degrees and under the protection of high-purity nitrogen to enable the PI glue passivation layer to be imidized and fused with the glass passivation layer so as to form an integrated protection layer. The PI glue passivation layer is covered on the surface of the glass passivation layer of the mesa thyristor; and the glass passivation layer and the PI glue passivation layer form the integrated protection layer. Through the technical scheme above, the glass passivation and PI glue passivation technology are utilized to form the integrated protection layer, thereby effectively improving charge distribution of the passivation layer, effectively reducing leak current of the thyristor and improving reliability of the thyristor.

Description

technical field [0001] The invention relates to a thyristor, in particular to an integrated protective mesa thyristor and a manufacturing method thereof. Background technique [0002] The leakage current of the thyristor generally refers to the peak current corresponding to the repeated peak voltage of the forward and reverse off-states at the rated junction temperature and the gate is open circuited. In use, the leakage current cannot be too large, otherwise, the thyristor will not work reliably. From the design point of view of the thyristor, to reduce the leakage current of the thyristor, a more optimized protection method must be adopted. [0003] Generally speaking, combining figure 1 , During the manufacturing process of semiconductor silicon device mesa thyristor, it is necessary to fill the mesa tank with molten glass powder. Then, by sintering, the glass powder is fixed in the mesa groove, the exposed PN junction is protected, the breakdown voltage of the mesa th...

Claims

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Application Information

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IPC IPC(8): H01L29/74H01L21/332
CPCH01L29/74H01L29/66363
Inventor 何春海
Owner 江苏东晨电子科技有限公司
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