Novel Low-Voltage High-Performance Non-volatile Memory Based on Discrete Nanographene Floating Gate

Abstract

The invention discloses a new low-voltage, high-performance non-volatile memory based on discrete nanographene floating gates, which includes: a substrate, a tunneling layer, a storage layer, a barrier layer and a gate electrode. The storage layer is a discrete Nanographene uses the density and size modulation of nanographene and the energy band modulation of the tunneling layer to optimize the charge distribution and retention characteristics in the storage layer. The present invention realizes a low-energy consumption non-volatile flash memory under low-voltage operation by introducing nano-graphene discrete floating gates, effectively controlling the density and size of nano-graphene, and modulating the energy band structure of the tunneling oxide layer. , which can optimize the charge distribution and retention characteristics in the storage layer to achieve high-performance operation of the device.

Description

technical field [0001] The invention relates to a floating gate type nonvolatile storage device, in particular to a novel discrete nano-graphene floating gate nonvolatile storage device with low voltage and high performance, and belongs to the technical field of nanomaterial manufacturing and storage. Background technique [0002] In the electronic information age, non-volatile memory, as one of the most important integrated circuit products, has a wide range of applications and an irreplaceable position in the fields of computers, multimedia applications, mobile network communications, consumer electronics, and defense electronic equipment. Especially its mainstream product - flash memory with the advantages of fast programming speed, high density, low power consumption, small size and high reliability, has occupied most of the market of non-volatile memory. [0003] However, with the continuous improvement of market demand and the continuous development of process technolo...

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Problems solved by technology

However, the floating gate memories of these nanocrystalline materials also face many problems in the process of scaling down. For example, the quantum confinement effect of semiconductor nanocrystals leads to a decrease in charge storage capacity when scaled down; metal nanocrystals are expensive and many preparation technologies It is not compatible with the CMOS process, and cannot achieve uniform and controllable size. It is easy to diffuse or undergo chemical reactions during high-temperature annealing, and cannot achieve high-density device integration when the scale is reduced. The chemical stability of metal-organic nanocrystals is poor, and high-temperature annealing is not possible. Poor retention characteristics; oxide nanocrystals cannot reduce power consumption, charge storage capacity is weak, etc.

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