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Organic solar cell with metal-mesh-nested heterogeneous junctions and preparation method for organic solar cell

A solar cell and metal mesh technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of weak built-in electric field and low conversion efficiency of organic solar cells, achieve strong electron affinity, increase built-in electric field strength, increase Effect of Structure Thickness

Inactive Publication Date: 2014-02-26
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] In view of the above-mentioned prior art, the purpose of the present invention is how to provide an organic solar cell with a metal mesh nested heterojunction and its preparation method, so as to solve the problem of low conversion efficiency of the organic solar cell due to the weak built-in electric field at the interface of the heterojunction technical problem

Method used

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  • Organic solar cell with metal-mesh-nested heterogeneous junctions and preparation method for organic solar cell
  • Organic solar cell with metal-mesh-nested heterogeneous junctions and preparation method for organic solar cell
  • Organic solar cell with metal-mesh-nested heterogeneous junctions and preparation method for organic solar cell

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Effect test

Embodiment 1

[0043] Device structure such as figure 1 shown. The material and thickness of each layer of the device are: substrate 1 is glass, anode electrode 2 is ITO with a thickness of 180 nm, hole transport layer 3 is copper phthalocyanine CuPc and perfluorophthalocyanine copper F 16 A mixed layer of CuPc with a thickness of 10 nm and a donor material of poly-3-hexylthiophene P 3 HT, the thickness is 30nm, the ultra-thin mesh metal layer is Ag, the thickness of the mesh metal layer is 1nm, the acceptor material is fullerene derivative PC61BM, the thickness is 40nm, the electron buffer layer is 4,7-diphenyl O-phenanthroline Bphen, the thickness is 2.5nm, the cathode is Ag, the thickness is 150nm.

[0044] Its preparation method is as follows:

[0045] ①Use detergent, acetone solution, deionized water and ethanol solution to ultrasonically clean the glass substrate on which the transparent anode electrode ITO has been sputtered, and dry it with dry nitrogen after cleaning;

[0046] ②...

Embodiment 2

[0054] Device structure such as figure 1 shown. The material and thickness of each layer of the device are as follows: the substrate 1 is glass, the anode electrode 2 is ITO with a thickness of 180 nm, and the hole transport layer 3 is copper phthalocyanine CuPc and perfluorophthalocyanine copper F 16 A mixed layer of CuPc with a thickness of 10 nm and a donor material of poly[[9-(1-octylnonyl)-9H-carbazole-2,7-diyl]-2,5-thiophenediyl-2,1 ,3-benzothiadiazole-4,7-diyl-2,5-thiophenediyl] (PCDTBT), the thickness is 30nm, the ultra-thin mesh metal layer is Au, the thickness of the metal layer is 1nm, the acceptor The material is fullerene derivative PC71BM with a thickness of 40nm, the electron buffer layer is 4,7-diphenyl-phenanthroline (Bphen) with a thickness of 2.5nm, and the cathode is Ag with a thickness of 150nm. The preparation process is similar to Example 1.

experiment example 3

[0056] Device structure such as figure 1 shown. The material and thickness of each layer of the device are: substrate 1 is glass, anode electrode 2 is ITO with a thickness of 180 nm, and hole transport layer 3 is 5,5'-bis(4-biphenyl)-2,2' - A mixed layer of dithiophene (BP2T) and perfluorophthalocyanine copper (F16CuPc) with a thickness of 10 nm, a donor material of poly-3-hexylthiophene (P3HT) with a thickness of 30 nm, and an ultra-thin metal layer of Pt with a thickness of 1nm, the acceptor material is fullerene derivative PC61BM, the thickness is 40nm, the electron buffer layer is 4,7-diphenyl-phenanthroline (Bphen), the thickness is 2.5nm, the cathode is Ag, the thickness is 150nm. The preparation process is similar to Example 1.

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Abstract

The invention discloses an organic solar cell with metal-mesh-nested heterogeneous junctions and a preparation method for the organic solar cell, and relates to the field of organic solar cells. The organic solar cell comprises a transparent substrate, a transparent positive electrode, a hole transport layer, a donor material layer, an ultra-thin metal mesh layer, an acceptor material layer, an electronic buffer layer and a negative electrode, wherein the continuous metal mesh nesting layer is clamped between the donor material layer and the acceptor material layer, and can form local schottky junctions with the N-type acceptor material layer, so that double built-in electric fields are formed on the basis of conventional heterogeneous junctions, the stagewise diffusion of electrons from an n-type material to a p-type material and the diffusion of holes from the p-type material to the n-type material are facilitated, the structural thicknesses of the heterogeneous junctions are increased, the separation efficiency of photo-generated excitons is improved, and the conversion efficiency of the organic solar cell is finally improved.

Description

technical field [0001] The invention relates to the field of organic solar cells, in particular to an organic solar cell based on a Schottky junction-based metal mesh nested heterojunction and a preparation method thereof. Background technique [0002] With the gradual depletion of fossil resources such as coal and oil, the energy crisis is getting closer and closer to us as time goes by, so finding new energy sources has become a very urgent matter. Compared with solar energy, it is inexhaustible and inexhaustible, and it also has many advantages such as environmental protection, safety, long-term, huge, etc. It has become the most ideal emerging renewable energy known so far. At present, various countries are actively researching and developing new technologies of solar energy, and strive to make breakthroughs in this area. How to better break through this technology has become a matter of strategic significance. [0003] China is the world's largest producer of inorganic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/48
CPCH01L51/424H01L51/426Y02E10/549H10K71/00H10K85/00H10K30/20H10K30/50H10K71/13
Inventor 钟建秦春伟杜新炜赵志宇邓鸣于军胜
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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