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Method for removing impurity bismuth in metal gallium

A technology for gallium metal and impurities, which is applied in the field of removing bismuth impurities in gallium metal by using a partial crystallization purification process, which can solve the problems of difficult high-purity gallium and unsatisfactory removal of bismuth impurities

Active Publication Date: 2012-08-01
朝阳金美镓业有限公司
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Problems solved by technology

However, the above methods are not ideal for removing impurity bismuth, so that when the content of impurity bismuth in the raw material gallium is too high, such as the content of bismuth reaches 49ppm, it is difficult to use the above method to obtain high-purity gallium with a purity of 99.9999%.

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  • Method for removing impurity bismuth in metal gallium
  • Method for removing impurity bismuth in metal gallium

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Embodiment 1

[0009] Example 1: A method for removing impurity bismuth in gallium metal, using a longitudinal temperature gradient solidification purification process to perform four times plus one partial crystallization operation, the process conditions for partial crystallization are: longitudinal temperature gradient 1.1~1.4°C / cm, average crystallization The speed is 3.2~4.2g / min, and the solid-liquid ratio is 75~85%.

[0010] Using the above process conditions, 5 partial crystallization operations were performed on each of the 3 groups of samples, and the purification effect is shown in Table 1. where S 0 is the raw gallium, S 3 is the solid phase produced by the third partial crystallization, S 4 is the solid phase produced by the 4th partial crystallization, S 5 This is the solid phase produced by the 5th partial crystallization.

[0011] Table 1. Content of impurity bismuth elements Unit: ppm.wt.

[0012]

[0013] For the enrichment of impurity bismuth element, see Table 2. ...

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Abstract

The invention discloses a method for removing impurity bismuth in metal gallium, which adopts a partial crystallization purification technique to implement the operation for four times. The technical condition is set as: a temperature gradient is 1.1 to 1.4 DEG C / cm, an average crystallization speed is 3.2 to 4.2g / min, and the solid-liquid ratio is 75 to 85 percent. Compared with the prior art, the method can effectively lower the bismuth content in the gallium metal to the limit (5ppb) or less detected by a glow discharge mass spectrometry (GDMS), so that a good condition can be created for preparing high-purity gallium with the purity of 99.9999 percent.

Description

technical field [0001] The invention relates to a purification method, in particular to a method for removing impurity bismuth in gallium metal by adopting a partial crystallization purification process. Background technique [0002] In modern high-tech fields, many high-purity materials are used. High-purity gallium metal is one of the most important materials in the development of electronic science. For this reason, many methods for purifying substances, especially metal elements, have been developed. Purification of gallium metal is a prominent one in the development of high-purity electronic materials. The methods for purifying gallium metal include: chemical extraction method, impurity priority chlorination method, electrolytic refining method, longitudinal temperature gradient solidification method (VGF), gallium single crystal pulling method and compound purification and reduction method, etc. However, the above methods are not ideal for removing impurity bismuth,...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22B58/00C22B9/00
Inventor 刘文兵范家骅刘素公金兰英
Owner 朝阳金美镓业有限公司
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