Mach-Zehnder silicon light modulator

A modulator and silicon photonics technology, applied in the field of integrated optics, can solve the problem of weak dispersion effect of free carrier plasma, reduce the time of depletion and injection into the junction region, increase the modulation speed, and reduce the access resistance Effect

Inactive Publication Date: 2015-05-06
SOUTHEAST UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, compared with the electro-optic effect of III-V materials, the free-carrier plasmonic dispersion effect is still relatively weak

Method used

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  • Mach-Zehnder silicon light modulator
  • Mach-Zehnder silicon light modulator
  • Mach-Zehnder silicon light modulator

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Embodiment Construction

[0038] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

[0039] A novel Mach-Zehnder silicon optical modulator of the present invention consists of an optical input channel, a multi-mode interference optical splitter, a ridge optical waveguide, a "Tian" type PN junction phase shift arm, a multi-mode interference optical coupler, and an optical output Channel composition. Among them, the "Tian" type PN junction phase shift arm is a ridge optical waveguide composed of double-layer PN junctions separated by intrinsic silicon layers. The two layers of PN junctions are antisymmetrically arranged, that is, the P-doped region of the upper layer corresponds to the N-doped region of the lower layer, and the N-doped region of the upper layer corresponds to the P-doped region of the...

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Abstract

The invention discloses a Mach-Zehnder silicon light modulator, which is characterized by comprising a light input channel (1), a multimode interference light branching unit (3), a multimode interference light coupler (4), a light output channel (2), a ridge light waveguide (8), an anode electrode (5), a cathode electrode (6) and a PN junction phase shifting arm (7), wherein the multimode interference light branching unit (3) is connected with the light input channel (1), the light output channel (2) is connected with the multimode interference light coupler (4), the multimode interference light branching unit (3) is connected with the multimode interference light coupler (4) through the ridge light waveguide (8), the anode electrode (5) and the cathode electrode (6) are positioned on two sides of the ridge light waveguide (8), and the PN junction phase shifting arm (7) is positioned in the ridge light waveguide (8). By the aid of the Mach-Zehnder silicon light modulator, the action zone of a plasma dispersion effect for a light field is increased, the phase shifting efficiency of the phase shifting arm in unit length is improved, the length of the pionic phase shifting arm is decreased, and the packaging coefficient of the modulator is reduced.

Description

technical field [0001] The invention relates to a silicon optical modulator used in the field of optical communication system, optical network technology and optoelectronic integration, belonging to the field of integrated optics. Background technique [0002] The optical modulator is a key device for high-speed, long-distance optical communication and one of the most important integrated optical devices. It is a device that modulates the refractive index, absorptivity, amplitude, or phase of output light through changes in voltage or electric field. It is based on the basic theory of various forms of electro-optic effect, acousto-optic effect, magneto-optic effect, carrier dispersion effect and so on. [0003] Optical modulators based on materials such as lithium niobate and III-V semiconductors are currently the most commonly used optical modulators, and the modulation speed can reach 10Gbit / s. However, the above-mentioned modulators are discrete components, which are no...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/025
Inventor 肖金标
Owner SOUTHEAST UNIV
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