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Load drive apparatus and semiconductor switching device drive apparatus

A switching device and load-driven technology, applied in electronic switches, electrical components, pulse technology, etc., can solve the problems of reducing switching speed, increasing switching loss, etc., reducing the occurrence and change of surge voltage, and improving short-circuit capacity. Effect

Active Publication Date: 2012-09-26
DENSO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, reducing the drive current applied to the control terminal reduces switching speed and increases switching losses

Method used

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  • Load drive apparatus and semiconductor switching device drive apparatus
  • Load drive apparatus and semiconductor switching device drive apparatus
  • Load drive apparatus and semiconductor switching device drive apparatus

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0051] will refer to e.g. figure 1 A load driving device according to a first embodiment of the present disclosure is described.

[0052] figure 1 The load driving device shown includes an IGBT 1 as a switching device, a gate driving circuit 2, a clamping circuit 3, a temperature detecting circuit 4, and an arithmetic device 5. The IGBT 1 is coupled to a load (not shown). The load driving device is capable of supplying power to the load by turning on the IGBT.

[0053] The gate drive circuit 2 drives the IGBT 1 . The collector of IGBT 1 is coupled to the power supply. The emitter of the IGBT 1 serves as a reference point of a predetermined potential. A load is coupled to the collector or emitter of IGBT 1 . A load may be any device that is driven depending on the switching state of a power source. For example, when the inverter includes a plurality of IGBTs 1, a three-phase motor can be used as a load. In this case, the figure 1 The load drive device shown in is use...

no. 2 example

[0072] A load driving device according to a second embodiment of the present disclosure will be described. This embodiment modifies the configuration of the clamp circuit 3 according to the first embodiment. Other features of the load driving device according to the present embodiment are similar to those of the load driving device according to the first embodiment. Thus, only the differences from the first embodiment will be described.

[0073] Such as Figure 4 As shown, the clamping circuit 3 according to this embodiment has only the current pull-down capability, and includes a diode 34 coupled in the forward direction, a zener diode 35 coupled in the reverse direction, and a switch coupled in parallel with the diode 34 and the zener diode 35 respectively. 36 and 37.

[0074] The control voltage of the arithmetic device 5 controls the switches 36 and 37 to be turned on or off to be able to adjust the clamp voltage by a combination of the forward voltage Vf of the diode 3...

no. 3 example

[0078] A load driving device according to a third embodiment of the present disclosure will be described. This embodiment modifies the temperature detection technique according to the first embodiment. Other features of the load driving device according to the present embodiment are similar to those of the load driving device according to the first embodiment. Thus, only the differences from the first embodiment will be described.

[0079] Such as Figure 5 As shown, a cooler 6 is provided for dissipating heat from switching devices such as the IGBT 1 and releasing heat from the IGBT 1 to prevent the IGBT 1 from overheating. The cooler 6 includes a temperature sensor 6a. The detection signal from the temperature sensor 6 a can be used as temperature information for the temperature detection circuit 4 to detect the temperature of the IGBT 1 . The temperature sensor 6a is provided for the cooler 6, and the temperature of the IGBT 1 can be detected indirectly. The cooler 6 m...

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PUM

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Abstract

A load drive apparatus includes a switching device (1), a gate drive circuit (2), a clamp circuit (3), a temperature detection circuit (4), and an arithmetic device (5). The switching device controls an on-off state of current supply to a load. The gate drive circuit turns on the switching device by controlling a gate voltage of the switching device so that the switching device operates in a full-on state. The clamp circuit clamps the gate voltage of the switching device to a clamp voltage lower than the gate voltage in the full-on state and higher than a mirror voltage. The temperature detection circuit detects a temperature of the switching device. The arithmetic device calculates a voltage corresponding to a variation in a mirror voltage based on the detected temperature and controls the clamp voltage in the clamp circuit so as to be the calculated voltage.

Description

technical field [0001] The present disclosure relates to a load driving device comprising switching means for controlling a load current supply. The present disclosure also relates to a semiconductor switching device driving device. Background technique [0002] There has been provided a load driving apparatus that drives a load using a switching device such as an insulated gate bipolar transistor (IGBT) and a power metal oxide semiconductor field effect transistor (power MOSFET). When the IGBT is turned on, if a short circuit occurs somewhere on the line leading to the power supply of the load coupled with the IGBT, the load driving device generates an overcurrent, and the IGBT is broken down due to a sudden increase in the temperature of the IGBT. Therefore, it is very important to detect short circuits. [0003] In load driving equipment, the size of the IGBT is reduced to reduce the cost of the IGBT, and the short-circuit capacity of the IGBT device is structurally red...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/08H03K17/567
CPCH03K17/14H03K17/0828
Inventor 尾势朋久滨中义行千田康隆三浦亮太郎山本宪司
Owner DENSO CORP