Solar polycrystalline silicon purification equipment employing directional solidification metallurgical method
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A technology of directional solidification and metallurgy, which is applied in self-solidification, polycrystalline material growth, crystal growth, etc., can solve the problems of small capacity, low yield, poor product quality homogeneity, etc., and achieve low cost and long service life , the effect of good directional solidification speed
Inactive Publication Date: 2012-10-03
JACO SOLAR SILICON LONGYAN CO LTD
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There are also cheap ingot casting equipment for purification in use in China. Although it has an ad...
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example 1
[0070] 1. Automatic temperature control system data writing
[0071] Set the temperature control curve of the top thermocouple as:
[0072] 1430℃-------Insulation-----1h
[0073] 1430℃-------1428℃-----5h
[0074] 1428℃-------1426℃-----5h
[0075] 1426℃-------1424℃-----5h
[0076] 1424℃-------1422℃-----5h
[0077] 1422℃-------1420℃-----5h
[0078] Naturally cool down to 600°C when power is off
[0079] The temperature control curve of the bottom thermocouple is:
[0080] 1420℃-------Insulation-----1h
[0081] 1420℃-------1419℃-----2h
[0082] 1419℃-------1418℃-----1h
[0083] 1418℃-------1417℃-----1h
[0084] 1417℃-----1380℃-----20h
[0085] Natural cooling to 500°C when power off
[0086] 2. The inner size of graphite ingot mold is 1500*1200*400mm
[0087] 3. The capacity of intermediate frequency furnace is 1500kg, graphite crucible.
[0088] 4. The silicon material adopts metal silicon with a P value of about 1ppmw and a total amount of metal elements below 100...
example 2
[0093] 1. Automatic temperature control system data writing
[0094] Set the temperature control curve of the top thermocouple as:
[0095] 1450℃-------Insulation-----1h
[0096] 1450℃-------1430℃-----2h
[0097] 1430℃-------1428℃-----4h
[0098] 1428℃-------1426℃-----3h
[0099] 1426℃-------1424℃-----2h
[0100] 1424℃-------1422℃-----1h
[0101] 1422℃-------1420℃---15h
[0102] Naturally cool down to 600°C when power is off
[0103] The temperature control curve of the bottom thermocouple is:
[0104] 1420℃-------Insulation-----1h
[0105] 1420℃-------1419℃-----3h
[0106] 1419℃-------1418℃-----2h
[0107] 1418℃-------1417℃-----0.5h
[0108] 1417℃-----1380℃-----19h
[0109] Natural cooling to 500°C when power off
[0110] 2. The inner size of graphite ingot mold is 1500*1200*400mm
[0111] 3. The capacity of intermediate frequency furnace is 1500kg, graphite crucible.
[0112] 4. The silicon material adopts metal silicon with a P value of about 1ppmw and a tota...
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Abstract
The invention discloses solar polycrystalline silicon purification equipment employing the directional solidification metallurgical method. The solar polycrystalline silicon solidification equipment comprises a furnace body and a trolley, wherein a movable door is arranged on one side surface of the furnace body; the trolley can move in and out of the furnace body; a heat preservation and insulation layer is arranged on the trolley, an ingot mold is supported on trolley, and movable wheels are arranged at the lower part of the trolley; a heat preservation and insulation layer is arranged on the inner wall of the furnace body, and a heat dissipation ventilation pipe is arranged on the furnace body; a thermoelectric couple is arranged on the furnace body; a heating silicon carbide rod is arranged on the top of a hearth of the furnace body; and the thermoelectric couple and the heating silicon carbide rod are electrically connected with a control system outside the furnace body. With the adoption of the solar polycrystalline silicon purification equipment, the efficacies of low manufacturing cost, high capacity and low power consumption are realized, the metallurgical method that silicon material is directly subjected to atmospheric high-capacity directional solidification purification after the smelting procedure is finished is also realized, the yield and the purification effect of cast ingot are improved, and furthermore, the production cost is reduced, and the large-scale production is realized.
Description
technical field [0001] The invention relates to directional solidification and purification used in the process of producing solar polysilicon by metallurgical method, in particular to a kind of directional solidification metallurgical method solar polysilicon purification equipment. Background technique [0002] Utilizing the segregation effect of directional solidification to purify and remove impurities is one of the important technologies for metallurgical solar polysilicon production. Most of the existing polysilicon ingot furnaces in the market are 450kg / furnace traditional equipment (such as the GT furnace in the United States, the ALD furnace in Germany), the cost is relatively high, and there is no mature equipment and process in terms of large-capacity technology, which is applied to solar polysilicon metallurgy There are still many problems in the purification of silicon materials. In addition, the existing polysilicon ingot furnaces are oriented towards the ingo...
Claims
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Application Information
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