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Method for growing hemispherical sapphire crystal with certain curvature

A sapphire crystal and hemispherical technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of low effective utilization rate, waste of processing materials, and many processes, so as to save costs, reduce subsequent processing procedures, fast effect

Active Publication Date: 2015-08-19
通辽精工蓝宝石有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional processing technology is obtained by rounding, cutting and grinding the sapphire rough rod. There are many procedures, long time, low effective utilization rate and serious waste of processing materials.

Method used

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  • Method for growing hemispherical sapphire crystal with certain curvature
  • Method for growing hemispherical sapphire crystal with certain curvature
  • Method for growing hemispherical sapphire crystal with certain curvature

Examples

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Embodiment Construction

[0014] A method of growing hemispherical sapphire crystals with a certain curvature, such as figure 1 and 2 As shown, it includes a crucible 1 and a mold 2 with a slit 3 and a through hole 4 at the bottom placed in the crucible 1. There is alumina melt in the crucible 1, and the alumina melt is along the The slit 3 of the mold 2 rises up, forming a layer of melt layer on the surface of the mold 2; as image 3 As shown, it also includes two parallel vertical supports 5, horizontal bars 6, pulling heads 7, lifting rods 8, clamps 9, seed crystals 11 and two parallel horizontal guide rails 10, the two Two vertical brackets 5 are slidably installed on the two horizontal guide rails 10 respectively, and the two ends of the horizontal bar 6 are respectively fixed on the tops of the two vertical supports 5, and the horizontal bar 6 is slidably installed on the top of the two vertical supports 5. The lifting head 7, the clamp 9 is installed on the bottom of the lifting rod 8, the see...

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Abstract

The invention discloses a method for growing a semispherical sapphire crystal with a certain curvature. The method comprises the following steps of: forming a melt layer on the surface of a mold by adopting a mold guiding method; aligning a seed crystal with the mold; making a lifting rod slide vertically and a vertical bracket slide horizontally by adjusting the position of a lifting head along a horizontal direction; matching three moving tracks to form a geometrical spherical surface with a certain curvature; and guiding the crystal to grow into a semispherical shape with a certain curvature. In the method, the semispherical sapphire crystal grown with an improved mold guiding method has the advantages of high crystal growing speed and moulding at one time, subsequent machining processes of the semispherical sapphire crystal can be reduced, resource energy consumption in a crystal machining process is lowered, and the cost is saved.

Description

technical field [0001] The invention relates to the field of crystal growth, in particular to a method for growing a hemispherical sapphire crystal with a certain curvature. Background technique [0002] Sapphire has high hardness, high temperature resistance, corrosion resistance, wide transmission spectrum range, high transmittance, and excellent dielectric properties. Sapphire is widely used in a series of high-tech fields such as national defense, military affairs, and scientific research because of its excellent performance, and it is also widely used in civil industry. [0003] Due to the high growth temperature of sapphire (the growth temperature is 2050 degrees, resulting in high power of the single crystal growth furnace), many temperature field variables, and long auxiliary time (non-production time accounts for more than one-third of the entire process), the production cost is too high . The guided mode method has the advantages of fast crystal growth, preci...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/20C30B15/34
Inventor 王楠赵青贾建国
Owner 通辽精工蓝宝石有限公司
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