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Ion milling device, sample processing method, processing device, and sample drive mechanism

A technology of processing device and driving mechanism, applied in metal processing equipment, manufacturing tools, electron beam welding equipment, etc., can solve the problems of time-consuming, complicated operation, and inability to obtain a machined surface.

Inactive Publication Date: 2012-10-03
HITACHI HIGH-TECH CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0017] However, the milling rate depends on each material and the ion beam irradiation angle. For a composite material composed of materials with different milling rates, the conventional ion milling method in which the ion beam irradiation angle to the sample is fixed cannot be obtained for micro The problem of smooth machined surfaces for structural analysis
[0018] In addition, in order to confirm whether the processing required for observation and analysis is completed, it is necessary to remove the sample from the ion milling device and observe it with an optical microscope or SEM to confirm, so the work is complicated and time-consuming

Method used

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  • Ion milling device, sample processing method, processing device, and sample drive mechanism
  • Ion milling device, sample processing method, processing device, and sample drive mechanism
  • Ion milling device, sample processing method, processing device, and sample drive mechanism

Examples

Experimental program
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Effect test

Embodiment 1

[0038] figure 1 It is a figure which shows an example of the ion milling apparatus to which this invention is applied. The ion milling device includes: equipped with figure 1 The sample mounting table 006, ion source 002, sample chamber 004, and vacuum exhaust system of the sample tilting and rotating mechanism 001 shown by the dotted line in , which continuously change the irradiation angle of the ion beam irradiated to the sample of the present invention 005, ion current measuring device 007, high voltage unit 008, gas supply source 009.

[0039] The sample tilting and rotating mechanism 001 of this embodiment is installed in the sample chamber 004 via the sample mounting table 006 . The sample chamber 004 is controlled to atmospheric pressure or vacuum by the vacuum exhaust system 005 and can maintain this state.

[0040] The ion source 002 refers to an irradiation system including all components for irradiating an ion beam 003 .

[0041] In addition, the sample mountin...

Embodiment 2

[0051] Figure 5 It is a diagram showing another embodiment of the present invention, and it is an explanatory diagram of the angle at which the ion beam 003 is irradiated to the sample continuously changed by the sample rotation and tilt mechanism 001 , that is, the sample tilt angle (θ) in the present invention. The range of the sample inclination angle (θ) can be changed by changing the swing width of the drive arm 106 .

[0052] Specifically, if the pin 114 attached to the rotating plate 107 that drives the driving arm 106 is disposed inside the rotating plate 107 or the rotating plate 107 is reduced in size, as Figure 5 As shown in (a), the sample inclination angle (θ1) 108 can be reduced. In addition, if the pin 114 attached to the rotating plate 107 that drives the drive arm 106 is arranged outside the rotating plate 107 or if the rotating plate 107 is enlarged, as Figure 5 As shown in (b), the sample inclination angle (θ2) 109 can be increased.

[0053] Then, acco...

Embodiment 3

[0058] Figure 7 It is a figure which shows the example of the end point detection of the process of the ion milling apparatus of this invention.

[0059] In this embodiment, a case where the SEM function is provided in the ion milling apparatus of the present invention will be described.

[0060] The SEM function is to irradiate the sample 101 with an electron beam 014 from the electron gun 012, and has a secondary electron detector 017 and a reflected electron detector for detecting signals such as secondary electrons 015 and reflected electrons 016 emitted from the sample 101. The device 013 has a basic function as a general SEM such as displaying the signal as a two-dimensional image.

[0061] The ion milling / SEM control system unit 018 has the basic function of controlling the aforementioned general SEM, the function of displaying the image brightness of the two-dimensional image as a line profile, and the function of controlling the ion milling device.

[0062] Figur...

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Abstract

A technique for processing which does not depend on the material or the angle of incidence of an ion beam is provided. A processing device for processing a sample by directing an ion beam onto the sample, wherein a sample rotating / tilting mechanism for rotating and tilting the sample with respect to the ion beam is provided, the sample rotating / tilting mechanism is provided with a rotation shaft which rotates the sample with respect to the ion beam and is also provided with a tilt shaft which is orthogonal to the rotation shaft and tilts the sample with respect to the ion beam, and rotation and tilting of the sample are performed simultaneously.

Description

technical field [0001] The present invention relates to an ion milling device and a sample processing method for a scanning electron microscope, and more particularly to ion milling for preparing a sample to be observed and analyzed using a scanning electron microscope, EBSP method (Electron Backscatter Diffraction Pattern, Electron Backscatter diffraction Pattern), etc. Milling device and sample processing method for scanning electron microscope. Background technique [0002] In recent years, with the rapid advancement of mounting technology for electronic devices, the components of electronic components have also been reduced in size and high in density, and the demand for SEM observation and analysis of their internal structures has rapidly increased. [0003] For the sample surface produced by mechanical polishing for the purpose of observing the internal structure of the sample, there are cases where the microstructure cannot be observed and analyzed due to deformation,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/30B23K15/00G01N1/28H01J37/20
CPCH01J2237/20214H01J37/28H01J37/3056H01J2237/3114H01J2237/20242H01J2237/20207H01J37/20B23K15/00G01N1/28H01J37/30
Inventor 中岛里绘黑泽浩一高须久幸
Owner HITACHI HIGH-TECH CORP