Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for flattening surface of flexible material layer

A flexible material layer and surface planarization technology, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve the problem of flexible materials falling off and so on

Inactive Publication Date: 2012-10-10
PEKING UNIV
View PDF3 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method is very unsuitable for these flexible materials, and tends to cause the shedding of flexible materials (Chemical Mechanical Planarization of Microelectronic Materials, Joseph M. Steigerwald, Shyam P. Murarka, Ronald J. Gutmann, Published Online: 21 DEC 2007 (book) )

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for flattening surface of flexible material layer
  • Method for flattening surface of flexible material layer
  • Method for flattening surface of flexible material layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] The present invention will be specifically described through embodiments below in conjunction with the accompanying drawings.

[0030] Raw material: double-sided polished N-type silicon wafer 10, resistivity 2~4Ω-cm, crystal orientation , silicon wafer thickness 400μm;

[0031] The workpiece to be processed covered with a layer of flexible material on the device.

[0032] (1) According to figure 1 The shown process flow makes a silicon carbide stencil, including the following steps:

[0033] 1. Use plasma-enhanced chemical vapor deposition (PECVD) equipment in the standard semiconductor process to grow SiC thin films 11 and 12 on both sides of the silicon substrate 10, such as figure 1 as shown in (a);

[0034] Among them, the conditions for PECVD deposition of SiC film are: pressure 700-1200mTorr, temperature 200-400°C, SiH 4 : 20~60sccm, CH 4 : 200~400sccm, Ar: 200~400sccm, HF (13.56MHz): 10~20s, LF (380kHz): 20~30s, power 200~400W. The formed SiC thin...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for flattening the surface of a flexible material layer. The flexible material layer grows at the surface of a device, and the method comprises the following steps of: firstly, preparing a hard template according to a concave-convex structure on the surface of the device covered by the flexible material layer; then, placing the hard template on the flexible material layer, aligning, tightly contacting and fixing the hard template and the flexible material layer, and exposing bulges on the flexible material layer in a graph area of the hard template; and finally, etching the bulges on the surface of the flexible material layer through a plasma etching method. According to the method disclosed by the invention, the altitude difference, which is more than 2 micrometers and exists in the flexible material layer, can be reduced within 1 micrometer, and thus the flattening of the surface of the flexible material layer can be realized.

Description

technical field [0001] The invention relates to a method for planarizing a flexible material layer with an uneven surface in the field of micromachining. Background technique [0002] With the development of the microelectronics industry, more and more applications of its devices in the fields of biology and medicine have bright prospects. These applications often require microelectronic devices to be flexible, ductile and biocompatible, so thicker flexible materials need to be grown and processed during processing, such as polymer parylene, polyimide ( polyimide) etc. (Liu C, ADVANCED MATERIALS Vol.19 Iss.22 3783-3790 Published: NOV 192007). However, due to the diversification and complexity of the structure of the device, after the flexible material is grown, the surface of the flexible material layer is often uneven, which brings a lot of challenges to the subsequent patterning processing, including electrode leads, multi-layer composite processing, etc. Trouble, this r...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/311
Inventor 张海霞唐伟孙旭明王子然彭旭华孟博
Owner PEKING UNIV