Transparent conductive film and preparation method thereof
A transparent conductive film and film-forming technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of decreased transmittance in the near-infrared band, poor conductivity and light transmittance, and general conductivity and light transmittance. , to achieve the effect of good conductivity, improved efficiency and high light transmittance
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment Construction
[0009] The present invention mainly proposes a new type of transparent conductive film material called ITWO, and the transparent conductive film is made of In 2 o 3 Doped SnO 2 and WO 3 Made, In 2 o 3 : SnO 2 : WO 3 The mass percentage of each component is 90-95wt%: 4%-9wt%: 1%-5wt%. More preferably: 91-93wt%: 5%-7wt%: 2%-3wt%.
[0010] The role of ITWO: as the window layer of thin-film solar cells, it reduces the contact resistance between the metal grid line and the absorber layer (or buffer layer), thereby reducing the series resistance, increasing the short-circuit current density of the cell, and improving efficiency.
[0011] The ITWO transparent conductive material proposed by the present invention can be realized by various preparation methods. Such as reactive plasma deposition (RPD), magnetron sputtering, electron beam evaporation, etc. The target can be mixed target In 2 o 3 :SnO 2 -WO 3 Mixed target, co-deposition of ITO and IWO targets, or IWO and SnO...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com