Transparent conductive film and preparation method thereof

A transparent conductive film and film-forming technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of decreased transmittance in the near-infrared band, poor conductivity and light transmittance, and general conductivity and light transmittance. , to achieve the effect of good conductivity, improved efficiency and high light transmittance

Inactive Publication Date: 2012-10-24
TRINASOLAR CO LTD
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Problems solved by technology

Among them, the ITO film has the advantages of good conductivity and high transmittance in the visible light band, but the disadvantage is that the transmittance in the near-infrared band drops sharply; IWO has the advantages of high mobility and high transmittance in the near-infrared band, but its co

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Example Embodiment

[0009] The present invention mainly proposes a new type of transparent conductive film material called ITWO, and the transparent conductive film is made of In 2 o 3 Doped SnO 2 and WO 3 Made, In 2 o 3 : SnO 2 : WO 3 The mass percentage of each component is 90-95wt%: 4%-9wt%: 1%-5wt%. More preferably: 91-93wt%: 5%-7wt%: 2%-3wt%.

[0010] The role of ITWO: as the window layer of thin-film solar cells, it reduces the contact resistance between the metal grid line and the absorber layer (or buffer layer), thereby reducing the series resistance, increasing the short-circuit current density of the cell, and improving efficiency.

[0011] The ITWO transparent conductive material proposed by the present invention can be realized by various preparation methods. Such as reactive plasma deposition (RPD), magnetron sputtering, electron beam evaporation, etc. The target can be mixed target In 2 o 3 :SnO 2 -WO 3 Mixed target, co-deposition of ITO and IWO targets, or IWO and SnO...

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Abstract

The invention relates to a transparent conductive film (In2O3)x(SnO2)y(WO3)z(ITWO), which is prepared by doping SnO2 and WO3 in In2O3, wherein the transparent conductive film consists of following components in percentage by mass: 90-95 wt% to 4-9 wt% to 1-5 wt% of In2O3 to SnO2 to WO3. The transparent conductive film is prepared by adopting the method of magnetron sputtering or electron beam evaporation through reactive plasma deposition; the target adopts a mixed target of In2O3 to SnO2-WO3, or adopts co-deposition of ITO and IWO two targets or co-deposition of IWO and SnO2 two targets. The conductive film and the preparation method provided by the invention have the beneficial effects that the novel material has good conductivity of ITO and high light transmission of visible light wave band, and has high mobility of IWO and high light transmission characteristic of near-infrared wave band; the conductive film can be used as a window layer in a film solar cell, the short circuit current intensity of batteries can be effectively improved, and thus, the efficiency can be improved.

Description

technical field [0001] The invention relates to a transparent conductive film and a preparation method thereof. Background technique [0002] Transparent conductive films (TCOs) are widely used in flat panel displays, OLEDs, touch panels, and solar cells due to their high electrical conductivity and light transmission. In solar cells, it is generally used as a window layer, and common TCO films include In 2 o 3 : SnO 2 (called ITO), ZnO:Al (called AZO), SnO 2 : F (called FTO) and In 2 o 3 : WO 3 (known as IWO) and so on. Among them, the ITO film has the advantages of good conductivity and high transmittance in the visible light band, but the disadvantage is that the transmittance in the near-infrared band drops sharply; IWO has the advantages of high mobility and high transmittance in the near-infrared band, but its conductivity is not as good as ITO; AZO has the advantages of low cost and stability in hydrogen plasma, but the disadvantage is that its conductivity an...

Claims

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Application Information

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IPC IPC(8): H01L31/0224H01L31/18C23C14/08
CPCY02P70/50
Inventor 崔艳峰袁声召陆中丹
Owner TRINASOLAR CO LTD
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