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MEMS (micro electro mechanical system) triaxial acceleration transducer and manufacture method thereof

A technology of axial acceleration and sensors, which is applied in the field of microelectronic machinery and sensing technology, can solve the problems that the sensitivity characteristics and damping characteristics cannot be taken into account at the same time, the production is complicated, and the sensitivity is low, so as to improve the detection sensitivity and performance stability. The effect of high utilization

Active Publication Date: 2012-10-31
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to overcome the problem that the sensitivity characteristics and damping characteristics of the prior art cannot be taken into account at the same time, and to provide a capacitive three-axis sensor with simple structure, easy manufacture, and high precision, linear output and low damping characteristics. A micromachined acceleration sensor to solve the problems of complex production, low sensitivity and high cost of the existing three-axis micromachined acceleration sensor

Method used

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  • MEMS (micro electro mechanical system) triaxial acceleration transducer and manufacture method thereof
  • MEMS (micro electro mechanical system) triaxial acceleration transducer and manufacture method thereof
  • MEMS (micro electro mechanical system) triaxial acceleration transducer and manufacture method thereof

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Embodiment 1

[0041] figure 2 It is a schematic diagram of the MEMS three-axis micro-acceleration sensor structure of the embodiment of the present invention; and image 3 is along figure 2 A schematic cross-sectional view taken along line A-A is shown. figure 2 and image 3 The shown capacitive bulk silicon micromachined three-axis acceleration sensor according to the embodiment of the present invention includes a two-layer structure, which are respectively an upper sensitive element layer and a lower support layer.

[0042] Specifically, Figure 4 It is a schematic diagram of the layer structure of the sensitive element in the embodiment of the present invention. Figure 5 It is a schematic diagram of the structure of the lower electrode of the grid-type capacitor located on the surface of the lower support according to the embodiment of the present invention.

[0043] As shown in the figure, the sensitive element layer is composed of a supporting frame 1 , an elastic beam 2 , a q...

Embodiment approach

[0055] Reference to the manufacturing method of the capacitive three-axis acceleration sensor involved in Embodiment 1 of the present invention Figure 6 Shown process flow diagram is described, and concrete process implementation method comprises following steps (1) to (10):

[0056] (1) First thin the low-resistance silicon to the required thickness, such as Figure 6 as shown in S1;

[0057] (2) Oxidation, photolithography, and corrosion of the cavity on the back of the mass block (i.e. low-resistance silicon), the depth of the cavity is, for example, 3 μm, such as Figure 6 as shown in S2;

[0058] (3) The material of the lower support is glass, sputtered metal, such as Figure 6 as shown in S3;

[0059] (4) Through photolithography and corrosion to form the lower electrode of the grid capacitor, such as Figure 6 as shown in S4;

[0060] (5) The silicon chip and the lower support are anodically bonded to form a bonded sheet (including both the silicon chip and the l...

Embodiment 2

[0067] Reference to the manufacturing method of the capacitive grid-type MEMS three-axis acceleration sensor involved in this embodiment Figure 7The process flow chart shown is described, and the sensor structure is basically the same as that of Example 1, the main difference is that the materials of the sensitive mass and the lower support body and the manufacturing scheme of the upper electrode of the grid capacitor are different. In this embodiment, the sensitive mass The block is made of high-resistance silicon material, on which the upper electrode 8 of a metal grid capacitor is made, and the thickness of the mass block 3 can be selected according to needs. The specific process implementation method includes the following steps (1) to (8):

[0068] (1) First thin the high-resistance silicon to the required thickness, such as Figure 7 shown in S11;

[0069] (2) Form the cavity on the back of the mass block by photolithography and corrosion, the depth of the cavity is, f...

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Abstract

The invention provides an MEMS (micro electro mechanical system) triaxial acceleration transducer and a manufacture method thereof. The MEMS triaxial acceleration transducer in the invention comprises a support frame, an elastic beam, a sensitive mass block, a lower support body, a gate sensitive capacitor and a lead electrode, wherein the sensitive mass block is suspended in the support frame through the elastic beam; the support frame is connected with the lower support body by virtue of linkage; a gap is reserved between the sensitive mass block and the lower support body; an upper electrode of the gate capacitor is arranged on the sensitive mass block; a lower electrode assembly of the gate capacitor is arranged on the inner surface of the lower support body; the upper electrode and the lower electrode assembly are arranged in a stagger way to form a group of gate capacitors which are output from the lead electrode; the gate capacitors comprise a first capacitor, a second capacitor, a third capacitor and a fourth capacitor; a differential detection is formed respectively by the first capacitor and the second capacitor and by the third capacitor and the fourth capacitor; and a triaxial acceleration rate can be detected at the same time by the MEMS triaxial acceleration sensor by virtue of operation of the capacitors.

Description

technical field [0001] The present invention relates to sensing technology, micro-electromechanical (MEMS) technical field, more specifically, the present invention relates to a kind of capacitive grating type MEMS three-axis acceleration sensor, it can realize the measurement of three axial accelerations as a micro-inertial device, And the present invention also relates to a method for manufacturing such a MEMS triaxial acceleration sensor. Background technique [0002] As an inertial sensitive device, the acceleration sensor has been widely used in various fields such as automobiles, consumer electronics, earthquake monitoring and national defense. Micro-acceleration sensors based on micro-electro-mechanical systems (MEMS) technology have the advantages of small size, light weight, high sensitivity, and mass production, and are the mainstream products of acceleration sensors. There are many ways to implement accelerometer sensitivity, including piezoresistive, piezoelectr...

Claims

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Application Information

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IPC IPC(8): G01P15/18B81B3/00B81C1/00
Inventor 吴亚明杨丹琼徐静钟少龙
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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