Carrier stored groove bipolar transistor

A bipolar transistor, carrier storage technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of weakening conductance modulation effect, increasing on-resistance, increasing conduction loss, etc., to achieve conductance modulation effect. Enhanced, reduced on-state voltage drop, reduced on-state voltage drop effect

Inactive Publication Date: 2012-11-14
UNIV OF ELECTRONICS SCI & TECH OF CHINA +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, because the N-type base region of NPT-IGBT is too thick, the actual turn-off loss of NPT-IGBT is much larger than the calculated value obtained from the usually defined turn-off loss, so it is necessary to further reduce the NPT-IGBT turn-off loss
On the other hand, while non-punch-through insulated gate bipolar transistors use transparent collector technology to increase switching speed, since there is no N-type buffer layer, the electric field will end at the N-type

Method used

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  • Carrier stored groove bipolar transistor
  • Carrier stored groove bipolar transistor
  • Carrier stored groove bipolar transistor

Examples

Experimental program
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Embodiment Construction

[0019] A trench bipolar transistor for carrier storage, its cell structure is as follows figure 2 As shown, it includes metal gate electrode 1, active emitter electrode 2, metal collector electrode 3, N+ active region 4, P+ body region 5, P-base region 6, N carrier storage layer 7, gate dielectric layer 8, N − drift region 9 , N+ electric field stop layer 10 , P+ emitter region 11 and polysilicon gate 12 . From the lower layer to the upper layer, there are metal collector 3, P+ emitter region 11, N+ electric field stop layer 10, N-drift region 9, N carrier storage layer 7, P-base region 6, P+ body region 5 and active emitter Pole 2; wherein the N+ active region 4 is located on both sides of the top of the P-base region 6, the N+ active region 4 is in contact with the P+ body region 5, and the active emitter 2 is located on the surface of the N+ active region 4 and the P+ body region 5 . The metal gate electrode 1, the polysilicon gate 12 and the gate dielectric layer 8 toge...

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Abstract

The invention discloses a carrier stored groove bipolar transistor, belonging to the technical field of semiconductor power apparatus. Based on traditional CSTBT (Carrier Stored Trench Bipolar Transistor), the carrier stored groove bipolar transistor provided by the invention uses a thin N+ layer structure 21 on the tail end of a P-base area 6 groove to replace a small sacrificial P-base area, thereby further improving electron concentration of a carrier storage layer and a drift region; withstand voltage and turn-off characteristic of the apparatus cannot be affected when conducting voltage drop of IGBT (Insulated Gate Bipolar Transistor) is effectively reduced, thereby preferably improving a compromising relationship of conduction loss and turn-off loss.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, and relates to an insulated gate bipolar transistor (Insulate Gate Bipolar Transistor, referred to as IGBT), in particular to a carrier stored trench bipolar transistor (referred to as CSTBT). Background technique [0002] In recent years, with the rapid development of social economy, the increasing consumption of energy and the serious contradiction between energy supply and demand have become a bottleneck of social and economic development. On the one hand, the further development of social economy needs to vigorously develop new energy sources, such as wind energy, nuclear energy, tidal energy, etc., and on the other hand, it is necessary to vigorously develop energy-saving industries and technologies. Power electronics technology plays an important role in energy saving. It is a key component of mechanical automation, intelligent control and energy saving. Therefore, vigo...

Claims

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Application Information

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IPC IPC(8): H01L29/739H01L29/06
Inventor 李泽宏李巍赵起越夏小军李长安张金平任敏张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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