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Solar power generation and storage integrated device

An integrated device, solar energy technology, applied in photovoltaic power generation, electrical components, semiconductor devices and other directions, can solve the problems of limited types of thin-film energy storage devices, difficult preparation, increased cost, etc., to improve the efficiency of solar energy utilization and expand the scope of application , the effect of reducing difficulty

Active Publication Date: 2012-11-28
SHANGHAI ADVANCED RES INST CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide an integrated solar power generation and storage device, which is used to solve the problem of limited types of thin-film energy storage devices in the prior art and the increase in cost caused by the difficulty of preparation. question

Method used

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Examples

Experimental program
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Embodiment 1

[0067] Such as figure 1 As shown, the present invention provides an integrated solar power generation and storage device, which at least includes: a common electrode layer 1, a thin-film photovoltaic device 2, and a thin-film energy storage device 3, wherein, specifically, in this embodiment one Among them, the thin film photovoltaic device 2 is an amorphous silicon thin film solar cell, and the thin film energy storage device 3 is a lithium ion battery.

[0068] The common electrode layer 1 is a metal layer, and is provided with leads (not marked) connected thereto, wherein, the material of the common electrode layer 1 includes at least stainless steel, aluminum, copper, gold, silver, platinum, palladium or titanium , the common electrode layer 1 can be a sheet or a film. Specifically, in the first embodiment, the common electrode layer 1 is sheet stainless steel.

[0069] The thin film photovoltaic device 2 at least includes a light absorbing layer 22 formed on the upper s...

Embodiment 2

[0093] The basic structure of the second embodiment is similar to that of the first embodiment, except that the thin-film photovoltaic device 2 in the first embodiment is a thin-film photovoltaic device 2, while in the second embodiment, at least two thin-film photovoltaic devices 2 are connected in series. first device group. In the second embodiment, the relevant differences are described in detail, that is, the series structure of the thin-film photovoltaic device 2 , and the rest of the content that is the same as in the first embodiment will not be repeated one by one.

[0094] Such as figure 2 As shown, the present invention provides an integrated solar power generation and storage device, which at least includes: a common electrode layer 1, at least two thin-film photovoltaic devices 2 connected in series to form a first device group, and a thin-film energy storage device 3, Specifically, in the second embodiment, the thin-film photovoltaic device 2 is an amorphous si...

Embodiment 3

[0106] Embodiment 3 is basically the same as Embodiment 1, both including a thin film photovoltaic device 2 and a thin film energy storage device 3, the difference is that in this embodiment 3, the thin film photovoltaic device 2 is a copper indium gallium selenide thin film solar cell , the thin film energy storage device 3 is an electrochemical supercapacitor. The relevant differences are described in detail in the third embodiment, and the rest of the content that is the same as that in the first embodiment will not be repeated one by one.

[0107] Such as Figure 5 As shown, the present invention provides an integrated solar power generation and storage device, which at least includes: a common electrode layer 1, a thin-film photovoltaic device 2, and a thin-film energy storage device 3, wherein, specifically, in the third embodiment of the present invention Among them, the thin film photovoltaic device 2 is a copper indium gallium selenide thin film solar cell, and the t...

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Abstract

The invention provides a solar power generation and storage integrated device, which at least comprises a common electrode layer, at least one film photovoltaic device and at least one film storage device. The device has the characteristics that the energy loss of a solar power generation system is reduced, the cost is lowered, the system reliability is improved, and the solar utilization efficiency is improved; the application scope of the film storage device in the solar power generation and storage integrated device is broadened, so that the solar power generation and storage integrated device can be facilitated to meeting the requirements on different film storage devices; a tri-electrode structure is proposed, so that the difficulty of the production technology is lowered, and furthermore, the cost of the solar power generation and storage integrated device is reduced; and the solar power generation and storage integrated device is suitable for the design of a portable generation and storage device, and is contributed to the development of a new generation energy conversion and storage technology.

Description

technical field [0001] The invention belongs to the field of semiconductors and relates to photovoltaic power generation and energy storage and release, in particular to a solar power generation and storage integrated device. Background technique [0002] With the rapid development of communication, electronic equipment, automobile industry and space technology, the problem of international energy shortage has become increasingly prominent, and all countries are stepping up the development and research of new energy. Solar energy plays an important role in the process of replacing traditional energy by virtue of its renewable, abundant, non-polluting and other advantages. Thin-film solar cells are a kind of solar cells that use thin-film photovoltaic materials as the light-absorbing layer. They have the advantages of less material consumption, low manufacturing temperature, and short energy repayment cycle, and have attracted extensive attention from the industry and scienti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/058H01L31/0224H01M10/46H01L31/053
CPCY02E60/12Y02E10/50Y02E10/60Y02E60/10
Inventor 李东栋徐璟黄洪涛鲁林峰王会利吴慧徐辰刘东方方小红陈小源
Owner SHANGHAI ADVANCED RES INST CHINESE ACADEMY OF SCI
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