Zinc oxide (ZnO)-transistor-coupled logic (TCL) semiconductor luminescent device and method for manufacturing same

Abstract

The invention discloses a zinc oxide (ZnO)-transistor-coupled logic (TCL) semiconductor luminescent device and a method for manufacturing the same. The ZnO-TCL semiconductor luminescent device comprises a substrate and a semiconductor epitaxy laminate grown on the substrate; the semiconductor epitaxy laminate comprises an N-type layer, a multi-quantum wells (MQWS) layer, a P-type layer and a ZnO-TCL layer from bottom to top sequentially; after wet etching, an N-type metal electrode is also evaporated on the upper surface of the N-type layer; a P-type metal electrode is evaporated on the ZnO-TCL layer and comprises an embedded part; the embedded part is embedded in the ZnO-TCL layer; and the embedded depth of the embedded part is smaller than the height of the ZnO-TCL layer. A weak acid wet etching process is adopted, and controllable high-precision and low-cost etching is realized; a part of ZnO-TCL layer is etched off, so that the section of the ZnO-TCL layer is trapezoidal or bowl-shaped, a surface, which contacts the evaporated electrode, of the ZnO-TCL layer is wide, and adhesive force is high; and because part of ZnO-TCL layer is kept, integrity of a current expanding layer is guaranteed, and a current expanding effect can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor light emitting devices, in particular to a ZnO-TCL semiconductor light emitting device and a manufacturing method thereof. Background technique [0002] The invention is carried out aiming at ZnO-TCL process technology, one of the current research hotspots of GaN-based light-emitting diodes. The realization of the performance of power GaN-based light-emitting diodes is mainly divided into three aspects. First, grow high-quality GaN-based light-emitting diode epitaxial structures, which determine the internal quantum efficiency of light-emitting diodes; second, light extraction technology, which is to improve An important technology for the external quantum efficiency and reliability of the device; the preparation technology of transparent conductive film with high conductivity and high light transmittance is one of the effective ways to improve the light extraction of light-emitting diodes;...

AI Technical Summary

Problems solved by technology

However, ITO materials have the following disadvantages: (1) In is a rare metal, its reserves and output are limited, and the cost is high; (2) In is toxic, it is a heavy metal element and will pollute the environment; (3) ITO Poor stability in reducing atmosphere

For ZnO-based transparent conductive films, the wet controllable etching process has always been a problem, mainly because ZnO is an amphoteric oxide, which reacts too strongly with acid and alkali, and the lateral corrosion is serious, which affects the etching accuracy and etching speed. fast, hard to control

However, the cost of dry etching process, such as ICP etching, etc., is too high, which is the main challenge for the manufacture and popularization of ZnO-TCL light-emitting diode devices.

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