Solar battery with pn junction array light acceptance structure

A technology of solar cells and pn junctions, applied in the field of solar cells, can solve the problems of reducing the photoelectric conversion efficiency of cells, reducing the intensity of sunlight, etc., and achieve the effects of improving photoelectric conversion efficiency, low preparation cost, and simple structure

Inactive Publication Date: 2012-12-12
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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Problems solved by technology

The common feature of these cells is: due to the layered structure, sunlight incident on the working area (such as near the pn junction) must pass through a layer of film, such as the n-type or p-type layer film of Si solar cells, and this layer The film has a large absorption coefficient for high-energy photons larger than its band gap, which greatly reduces the intensity of sunlight reaching the working area, thereby reducing the photoelectric conversion efficiency of the cell

Method used

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  • Solar battery with pn junction array light acceptance structure
  • Solar battery with pn junction array light acceptance structure
  • Solar battery with pn junction array light acceptance structure

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Embodiment Construction

[0018] The structure and general preparation method of the solar cell of the present invention will be described in detail below by taking the preparation of a Si solar cell having the same structure as the patent of the present invention as an example.

[0019] ① Heavy doping on the back of the substrate: such as figure 1 As shown, the n-type Si substrate 1 is cleaned and doped with group VI elements by thermal diffusion to form heavily doped n + Type layer 2.

[0020] ②Preparation of partially covered SiO by thermal oxidation 2 Insulation layer: In order to prevent direct conduction between the n-type layer and the p-type layer when the ohmic contact is made on the illuminated surface, two flat strips of SiO are covered on the surface of the n-type layer by thermal oxidation and chemical etching. 2 Film 3, such as figure 2 shown.

[0021] ③ Preparation of photoresist layer with grid-like structure: Spin-coat a layer of photoresist on the surface of the sample by spin co...

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Abstract

The invention discloses a solar battery with a pn junction array light acceptance structure. Pn junction arrays arranged periodically at a fixed internal are formed on an n-type or p-type semiconductor material substrate, and the n-type or p-type layers are respectively connected in series to form the solar battery. During operation of the solar battery, the solar light is directly incident to the pn junction arrays. The solar battery provided by the invention has the outstanding advantage that the solar light can be incident to the solar battery without penetrating a p-type or n-type film by adopting the pn junction array light acceptance structure, so as to solve the difficult problem of solar light strong absorption by the top film of the existing solar battery and to obviate energy loss before the solar light is incident to the pn junction, thereby improving the photoelectric conversion efficiency of the solar battery.

Description

technical field [0001] The invention relates to solar cell technology, in particular to a solar cell with a pn junction array light-receiving structure, which is especially suitable for preparing solar cells with high conversion efficiency and low cost. Background technique [0002] Solar cells are a kind of components that can convert sunlight into electrical energy. A solar high-tech company with international influence. However, due to the problems of low photoelectric conversion efficiency and high cost, the development of current solar cell-related enterprises or companies is still inseparable from government support, and it is still a relatively "luxury" new energy source for a certain period of time. Therefore, improving the conversion efficiency of solar cells and reducing costs are the core issues to be solved urgently in the field of solar cells. [0003] Around this core issue, the development of solar cells has gone through three stages: the first stage is repr...

Claims

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Application Information

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IPC IPC(8): H01L25/04H01L31/0687H01L31/0352
CPCY02E10/50Y02E10/544
Inventor 邓惠勇郭建华邱锋吕英飞胡淑红胡古今戴宁
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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