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Thin film and compound used in the same

A compound and thin film technology, applied in bismuth organic compounds, electrical components, circuits, etc., can solve problems such as expensive and resource depletion

Inactive Publication Date: 2012-12-12
SUMITOMO CHEM CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, iridium exists as a resource in the earth's crust in a very small amount, so resources may be exhausted and expensive

Method used

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  • Thin film and compound used in the same
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  • Thin film and compound used in the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0332] Hereinafter, the present invention will be more specifically described based on examples, but the present invention is not limited to the following examples.

[0333] 1 H and 13 C NMR spectrum was measured using JEOL Model JNM-EX-270 spectrometer and JEOL Model JNM-EX-400. MS spectra were measured using SHIMADZU-GCMS-QP5050A. For the measurement of FAB-MS, a SX102A double focus mass spectrometer manufactured by JEOL Ltd was used. GPC for cyclic fractionation was detected by RI using Shodex Kf001 and KF002 as fillers in GL Science LC-908 MODEL576. Gas chromatography (hereinafter, sometimes abbreviated as GC) was used for measurement using Shimadzu Corporation GC-14B equipped with a Silicon OV-17 (2%-1m) packing column. Silica gel is used for thin layer chromatography (hereinafter sometimes abbreviated as TLC). The emission spectrum was measured with a fluorescence spectrophotometer (manufactured by JASCO Corporation, trade name: FP-6500) at an excitation wavelength ...

Synthetic example 1

[0342] (Synthesis Example 1) Synthesis of 1-phenyl-3,6-bis(trimethylsilyl)dithienobismuthol

[0343] [chem 37]

[0344]

[0345] The above synthesis reaction can be carried out in the following procedure to synthesize 1-phenyl-3,6-bis(trimethylsilyl)dithienobismuthole. In the formula, TMS represents a trimethylsilyl group.

[0346] Put 4,4'-dibromo-2,2'-bis(trimethylsilyl)bithiophene 0.446g (0.952mmol) and ether 10mL in a 30mL two-necked flask with a reflux cooling tube, and cool to -80°C. 1.25 mL of n-butyllithium (1.59 M hexane solution, 1.98 mmol) was added thereto, and the mixture was slowly returned to room temperature and stirred for about 1 hour. About 0.2 mL was collected and hydrolyzed, and the production of the dilithium was confirmed by GC (gas chromatography). On the other hand, 10 mL of THF and 0.514 g (0.952 mmol) of diiodophenylbismuth were placed in a 30 mL two-neck flask equipped with a dropping funnel and a reflux cooling tube, and the synthesized dili...

Synthetic example 2

[0351] (Synthesis Example 2) Synthesis of 1-phenyl-2,7-dimethyl-3,6-bis(trimethylsilyl)dithienobismuthol

[0352] [chem 38]

[0353]

[0354] The above synthesis reaction was carried out in the following order to synthesize 1-phenyl-2,7-dimethyl-3,6-bis(trimethylsilyl)dithienobismuthol.

[0355] Put 0.468 g (1 mmol) of 4,4'-dibromo-3,3'-dimethyl-2,2'-bis(trimethylsilyl)bithiophene and 5 mL of ether into a 10 mL two-necked flask , cooled to -80°C. 1.27 mL of n-butyllithium (1.56 M hexane solution, 2 mmol) was added thereto, slowly returned to room temperature, stirred for about 1 hour, and about 0.2 mL was collected for hydrolysis, and the formation of a dilithium was confirmed by GC. On the other hand, 5 mL of THF and 0.540 g (1 mmol) of diiodophenylbismuth were added to a 20 mL Schlenk tube with a dropping funnel, cooled to 0° C. in an ice bath, and di The lithiated body was kept at 0°C and stirred overnight. After confirming the disappearance of the dilithium by TLC (...

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Abstract

Disclosed is a new material that uses heavy metal elements having comparatively abundant amounts of resources and exhibits superior light emission properties. Also disclosed is a compound contained in a thin film and is represented by formula (1). (In the formula, Ar1 and Ar2 each independently represent a C3-30 aromatic ring. R1 and R2 represent substituents. a and b each independently represent an integer of 0 - 12. A1 represents any of a direct bond, -O-, -S-, -S(=O)-, -S(=O)2-, -PR3-, -NR4- and -C(-R5)2-. R3 represents a hydrogen atom or substituent. R4 represents a hydrogen atom or substituent. R5 represents a hydrogen atom or substituent. E1 represents a C=50 monovalent group. L1 represents a C=50 ligand, and c is an integer of 0-3).

Description

technical field [0001] The present invention relates to a thin film containing an organic compound containing bismuth in its structural skeleton, a coating solution for forming the thin film, a device having the thin film, and a novel compound used in the thin film. Background technique [0002] One of the characteristics of electronic devices and optical devices using organic compounds is that they form thin films controlled at the nanoscale by a method of film formation in a solution state, and devices that effectively utilize the characteristics of organic compounds can be fabricated. In elements such as organic electroluminescent elements (hereinafter sometimes referred to as organic EL elements), organic solar cells, and organic transistors, which are electronic devices or optical devices that have been actively developed in recent years, such devices controlled at the nanometer level are used. The thin film, the laminated structure of the thin film. [0003] In genera...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07F9/94
CPCC07F9/94C09K2211/1092C09K2211/1029C09K2211/188C09K2211/1088H01L51/0077C09K2211/1044H05B33/145H01L51/5016H10K85/30H10K50/11H10K2101/10
Inventor 大下净治村藤俊宏仓持悠辅开高敬东村秀之
Owner SUMITOMO CHEM CO LTD