Bismuth-containing precursor compositions and a method of depositing the precursor on a substrate to form a
bismuth-containing film are provided. The
bismuth-containing precursor is of the formula: BiL1L2L3, wherein each of L1, L2, or L3 independently is at least one of a
hydrogen, an
alkyl, an alkenyl, an alkynyl, an
aryl, a cycloalkyl, an alkoxy, an oxysilyl, an alkoxyalkyl, an aralkyl, a
thiol, a
xanthate, a
thioester, an amino, an
amidine, a
guanidine, a carbonyl, a
halogen, or any combination thereof, or at least two of L1, L2, or L3 are bonded to form a cyclic ring.