47results about "Bismuth organic compounds" patented technology

Provided is a bismuth compound for a photoresist, the bismuth compound being represented by chemical formula 1: <Chemical formula 1> In chemical formula 1, R1 to R5 are each independently selected from the group consisting of: hydrogen; deuterium; a C1-C20 alkyl group substituted or unsubstituted with at least one among deuterium, a halogen, and a cyano group; and a C6-C20 aryl group substituted or unsubstituted with at least one among deuterium, a halogen, and a cyano group, and at least one of R4 or R5 is a C1-C20 alkyl group substituted with at least one of a halogen or a cyano group.

The invention relates to a resist composition, a laminate, and a pattern forming method. The present invention addresses the problem of providing: a non-chemically amplified resist composition having excellent sensitivity and resolution in optical lithography using high-energy rays; a laminated film provided with a resist film obtained from the resist composition; and a pattern forming method using the resist composition. The solution of this problem is a resist composition containing a superatomic bismuth compound, a carboxyl group-containing polymer, and a solvent.

The application discloses a chalcogen-containing viologen derivative, a preparation method thereof and application of the chalcogen-containing viologen derivative in a flow battery system. The elements contained in the molecule include carbon, hydrogen, nitrogen, oxygen and chalcogen, and the molecule is rich in resources, low in cost and simple in synthesis method. Compared with a traditional bipyridine compound, the introduction of the chalcogen in the middle of the pyridine unit enhances the conjugation of the whole molecule structure and improves the stability of the molecule. The hydrophilic group is introduced into the nitrogen atom through ionization, the water solubility is increased, and the molecule can be used in a more green and environmental neutral aqueous flow battery. Tests show that the neutral aqueous flow battery composed of the molecule as an anode and ferrocene as a cathode has excellent performance, is stable in circulation and has a long service life, and has a good application prospect in the field of large-scale energy storage.

The present invention relates to the field of radioactive drugs, specifically to radionuclide-labeled boron-containing drugs and their preparation methods. The boron-containing drugs are obtained by labeling them with at least one radionuclide, and the boron-containing drugs are obtained by polymerization of dopamine and its derivatives with boron-containing compounds. The radionuclide-labeled boron-containing drugs of the present invention have tumor-targeting properties. A method for labeling a radionuclide to a boron-containing drug via complexation or covalent bonding is also provided.

The present invention relates to 2D bismuth material, also called bismuthene, with a sandwich-like sheet structure with at least two outer layers formed by organic molecules containing sulphur atoms that form Bi-S bonds and at least one inner layer formed by a crystalline network of Bi(0) atoms. These materials are useful in electronic, optoelectronic, catalytic applications or in energy storage and transformation. Furthermore, it relates to a process for producing this material from a bismuth salt that reacts with an amine and subsequently with a thiol by effect of the application of radiation and a subsequent reduction. This process has a colloidal approach to producing Bi(0) crystals based on a photocatalytic reduction of a soluble Bi(III) organometallic complex leading to the generation of said crystals.

A resist composition comprising a hypervalent bismuth compound having formula (1) and a solvent is provided. When processed by photolithography using high-energy radiation, the resist composition exhibits a high sensitivity and resolution. The non-chemically-amplified resist composition exhibits a high sensitivity and resolution when processed by photolithography using high-energy radiation, typically EB and EUV lithography.

To provide a compound capable of obtaining a photosensitive composition having high practicality as a photoresist capable of forming an ultrafine pattern.SOLUTION: The compound of the present invention is a compound containing a metallic atom and a carboxylate ligand A having a cyclic structure, wherein the carboxylate ligand A has a cyclic structure bonded to a carboxylate group, a carbon atom C1 in the cyclic structure bonded to the carboxylate group in the cyclic structure is a third or fourth carbon atom, a carbon atom C1 adjacent to the carbon atom C2 in the cyclic structure has a substitutional group R1, and the substitutional group R1 is an organic group or a halogen atom.SELECTED DRAWING: None

Provided is a compound capable of obtaining a highly practical photosensitive composition that can be used as a photoresist to form ultra-fine patterns.　A compound according to the present invention contains a metal atom and a carboxylate ligand A having a cyclic structure. The carboxylate ligand A has a cyclic structure bonded to a carboxylate group. In the cyclic structure, carbon C1 in the cyclic structure bonded to the carboxylate group is tertiary or quaternary carbon. Carbon C2 adjacent to carbon C1 in the cyclic structure has a substituent R1. The substituent R1 is an organic group or a halogen atom.

Provided are a compound capable of enabling miniaturization of a circuit pattern, and a photosensitive composition containing the same.　This compound contains poor metal atoms and carboxylate ligands A, and is characterized in that: the carboxylate ligands A have an alicyclic structure to which carboxylate groups are bonded; the alicyclic structure has one double bond; and carbons bonded to the carboxylate groups are quaternary carbon.

Disclosed herein is an invention that refers to hydrochloride metformin complexes with transition metals and group P elements, such as cobalt (II), nickel (II), copper (II), zinc (III), iron (II), bismuth (III) and their preparation method. Additionally, the present invention offers crystalline forms of the metformin-cobalt (II) complex, metformin-nickel complex and metformin-copper complex as well as methods for therapeutic use in patient treatment and their preparation method.

The invention provides a preparation method of triphenyl bismuth, which specifically comprises the following steps: step 1, in a nitrogen atmosphere, adding a 2-methyltetrahydrofuran solution and a catalyst into magnesium powder, then adding chlorobenzene, stirring at room temperature, then slowly adding the 2-methyltetrahydrofuran solution of the chlorobenzene, and after dropwise adding is completed, carrying out a reaction for 2-4 hours; continuously reacting to obtain a 2-methyltetrahydrofuran solution of phenylmagnesium chloride; step 2, slowly adding the 2-methyltetrahydrofuran solution of phenylmagnesium chloride obtained in the step 1 into the 2-methyltetrahydrofuran solution of bismuth trichloride at room temperature, heating to continue reaction after dropwise adding is completed, and cooling to room temperature after the reaction is completed to obtain a triphenylbismuth mixed solution; and step 3, slowly adding pure water into the triphenyl bismuth mixed solution obtained in the step 2 to carry out quenching reaction, then separating out a water phase, concentrating an organic phase to obtain a crude product, and crystallizing and purifying the crude product with ethanol to obtain a pure triphenyl bismuth product. The process operation steps are reduced, and the process wastewater amount is reduced.

The invention discloses a method for producing ecological primary explosive - basic bismuth(III) salt of 5,5 '-bis-azotetrazole and its using in ecological mixture for primer compositions of ammunition.

Aspects of the disclosure related to peripheral blocker compounds for use in reducing peripheral side effects of anti-CNS disease drugs.

The invention relates to a carboxy ligand such as those defined via the general formula (I) specified in the following text. The invention additionally relates to a bismuth-containing catalyst such as those according to the general formula (II), wherein the bismuth-containing catalyst comprises carboxy ligands of the general formula (I). The invention additionally relates to a method for producing such a carboxy ligand and to a method for producing such a bismuth-containing catalyst. During the production of the carboxy ligand according to the invention, a precursor of a ligand according to the general formula (III) is likewise obtained according to the invention. The invention also relates to the use of such a bismuth-containing catalyst for producing compounds which contain a urethane group.

Provided are a molded article having excellent antibacterial and antiviral activities and a method for producing the same with good processability, a masterbatch which makes it possible to provide the molded article and the production method, a thermoplastic resin composition, and methods for producing the same. More specifically, provided are: a masterbatch which contains an antibacterial / antiviral agent which is at least one selected from the group consisting of a fatty acid metal salt, a metal complex of a hetero-atom-containing ligand and a metal ion, and a metal complex of a hetero-atom-containing ligand and a fatty acid metal salt, wherein the metal in each of the fatty acid metal salt, the metal complex of a hetero-atom-containing compound ligand and a metal ion, and the metal complex of a hetero-atom-containing compound ligand and a fatty acid metal salt is independently a lanthanoid, bismuth, manganese, magnesium, lead, yttrium, cobalt, or copper; a resin composition prepared by melt-kneading the masterbatch with a thermoplastic resin; a molded article produced by melt-molding the resin composition; and methods for producing the same.

The present invention discloses a method for synthesizing a novel nitrogen-bismuth octane bismuth alkyl compound. The synthesis method is carried out by reacting nitrogen-bismuth octane organic bismuth chloride with an alkyl halide in the presence of ferric phosphate as a catalyst, 2,2-bipyridine as a ligand, manganese as a reducing agent, lithium chloride as an additive, DMF as a solvent, and a temperature of 100°C. The reaction can be completed in a relatively short time (3 hours), has good functional group tolerance, and has a high yield. Considering its sp 3 Organic bismuth compounds with carbon-bismuth bonds can be used to construct sp 3 It can also be widely used in carbon-carbon bond coupling reactions and the synthesis of drugs and natural products.

Bismuth-containing precursor compositions and a method of depositing the precursor on a substrate to form a bismuth-containing film are provided. The bismuth-containing precursor is of the formula: BiL1L2L3, wherein each of L1, L2, or L3 independently is at least one of a hydrogen, an alkyl, an alkenyl, an alkynyl, an aryl, a cycloalkyl, an alkoxy, an oxysilyl, an alkoxyalkyl, an aralkyl, a thiol, a xanthate, a thioester, an amino, an amidine, a guanidine, a carbonyl, a halogen, or any combination thereof, or at least two of L1, L2, or L3 are bonded to form a cyclic ring.

The present disclosure discusses methods for producing stereoisomerically enriched carbohydrate-based surfactants. In particular, methods of the invention include producing stereoisomerically enriched hydrophobic portion of the carbohydrate-based surfactants.

The disclosed and claimed subject matter relates to bismuth precursors of formula Bi(Ra)x(Ar)3-x, where x=1 or 2, and their use as precursors for the deposition of metal-containing films.

The present invention relates to a simple, safe and ecofriendly process for producing a bismuth or a zinc boron carboxylate comprising mixing carboxylic acids with metal oxide by adding boric acid esters. The present invention also provides the use of bismuth or zinc boron carboxylate as polyurethane catalyst preferably in coatings, adhesives, sealants, elastomers, flexible foams and rigid foams.

The present invention relates to a novel precursor for forming a metal-containing thin film, a method for forming a thin film using same, and a device including the thin film and, more specifically, to a novel precursor for forming a metal-containing thin film to allow high deposition temperatures and have low viscosity properties, a method for forming a thin film using same, and a device including the thin film.

The present invention relates to a metal complex, a semiconductor layer comprising the metal complex and an organic electronic device comprising at least one metal complex thereof.

The present invention provides: a bismuth compound represented by chemical formula 1, which can be effectively usable as a thin film precursor; and a composition for forming a thin film, comprising same. In addition, the present invention provides a method for synthesizing bismuth selenide (Bi2Se3) with excellent uniformity and high purity by using the composition for forming a thin film. [Chemical formula 1] (In chemical formula 1, R1) to R12 are each independently linear or branched C1-C10 alkyl.)

The present application provides organic mixed metal-oxygen cluster compounds having the general chemical formula: (M1): a (M2) b (M3) c O g (L1) x (L2) y (L3) z where M1 is selected from at least one of Ti, Zr, and Hf; M2 is selected from at least one of Bi, Te, Sn, Pt, Ag, and Au; M3 is selected from at least one of Fe, Ni, Co, and Cu; L1, L2, and L3 are each selected from organic ligands, which can be coordinated to a metal and contain at least one of O, S, Se, N, and P functioning as a coordination atom; a, b, g, x, y, and z are all natural numbers equal to or greater than 1, and c is a natural number equal to or greater than 0. The present application further provides a patterning material containing the organic mixed metal-oxygen cluster compound, a semiconductor device containing the patterning material, a terminal, and a method for patterning a substrate surface. In the method for patterning a substrate surface in the present application, a pattern with small edge roughness can be realized at high resolution using a simple material.

An organometallic compound, composition, and dry photoresist or hardmask for extreme ultraviolet (EUV) lithography are disclosed. The organometallic compound includes at least one bismuth element selected from Bi(III) and Bi(V). The organometallic compound also includes at least one C1 to C6 alkyl ligand and at least one terminal or bridging ligand A (O, S, or N-R, where the R group in N-R is H or a C1 to C6 alkyl) bonded to the bismuth element. Methods for preparing the dry photoresist or hardmask composition and for using the composition to form patterned material features on a substrate are disclosed as well.

The present invention provides a poor metal cluster compound that makes it possible to obtain a photosensitive composition that is highly useful as a photoresist capable of forming an ultrafine pattern.　A poor metal cluster compound according to the present invention is characterized by containing a poor metal atom, a carboxylate ligand A, and an oxo ligand and / or a hydroxo ligand, the carboxylate ligand having an alicyclic structure that binds to a carboxylate group. The poor metal atom is preferably bismuth, antimony, indium, or the like.　

To provide a non-chemically amplified resist composition excellent in sensitivity and resolution in photolithography using high-energy radiation, a laminated film including a resist film obtained from the resist composition, and a pattern forming method using the resist composition.SOLUTION: A resist composition comprises a hypervalent bismuth compound, a carboxy group-containing polymer, and a solvent.SELECTED DRAWING: None

To provide a poor metal cluster compound capable of obtaining a photosensitive composition having high practicality as a photoresist capable of forming an ultrafine pattern.SOLUTION: The poor metal cluster compound includes a poor metal atom, a carboxylate ligand A, and an oxo ligand and / or a hydroxo ligand, wherein the carboxylate ligand has an alicyclic structure bonded to a carboxylate group, and bismuth, antimony, indium and the like are suitable as the poor metal atom.SELECTED DRAWING: None

The present invention is a method for producing a thin film in which a bismuth metal thin film is formed using a bismuth compound represented by general formula (1) and at least one substance selected from the group consisting of Bi (SiMe3) 3 and a reducing gas, and a raw material for forming a thin film. In general formula (1), R1 represents a hydrogen atom or a hydrocarbon group having 1-5 carbon atoms, and R2, R3, and R4 each independently represent an alkyl group having 1-3 carbon atoms.

The non-chemically amplified resist composition which exhibits a high sensitivity and resolution when processed by photolithography using high-energy radiation, typically electron beam (EB) lithography and EUV lithography, a laminated film including a resist film obtained from the resist composition. The resist composition comprises a hypervalent bismuth compound, a carboxy group-containing polymer, and a solvent.