33results about "Bismuth organic compounds" patented technology

Provided is a bismuth compound for a photoresist, the bismuth compound being represented by chemical formula 1: <Chemical formula 1> In chemical formula 1, R1 to R5 are each independently selected from the group consisting of: hydrogen; deuterium; a C1-C20 alkyl group substituted or unsubstituted with at least one among deuterium, a halogen, and a cyano group; and a C6-C20 aryl group substituted or unsubstituted with at least one among deuterium, a halogen, and a cyano group, and at least one of R4 or R5 is a C1-C20 alkyl group substituted with at least one of a halogen or a cyano group.

A resist composition comprising a hypervalent bismuth compound having formula (1) and a solvent is provided. When processed by photolithography using high-energy radiation, the resist composition exhibits a high sensitivity and resolution. The non-chemically-amplified resist composition exhibits a high sensitivity and resolution when processed by photolithography using high-energy radiation, typically EB and EUV lithography.

To provide a compound capable of obtaining a photosensitive composition having high practicality as a photoresist capable of forming an ultrafine pattern.SOLUTION: The compound of the present invention is a compound containing a metallic atom and a carboxylate ligand A having a cyclic structure, wherein the carboxylate ligand A has a cyclic structure bonded to a carboxylate group, a carbon atom C1 in the cyclic structure bonded to the carboxylate group in the cyclic structure is a third or fourth carbon atom, a carbon atom C1 adjacent to the carbon atom C2 in the cyclic structure has a substitutional group R1, and the substitutional group R1 is an organic group or a halogen atom.SELECTED DRAWING: None

Provided is a compound capable of obtaining a highly practical photosensitive composition that can be used as a photoresist to form ultra-fine patterns.　A compound according to the present invention contains a metal atom and a carboxylate ligand A having a cyclic structure. The carboxylate ligand A has a cyclic structure bonded to a carboxylate group. In the cyclic structure, carbon C1 in the cyclic structure bonded to the carboxylate group is tertiary or quaternary carbon. Carbon C2 adjacent to carbon C1 in the cyclic structure has a substituent R1. The substituent R1 is an organic group or a halogen atom.

Provided are a compound capable of enabling miniaturization of a circuit pattern, and a photosensitive composition containing the same.　This compound contains poor metal atoms and carboxylate ligands A, and is characterized in that: the carboxylate ligands A have an alicyclic structure to which carboxylate groups are bonded; the alicyclic structure has one double bond; and carbons bonded to the carboxylate groups are quaternary carbon.

The invention provides a preparation method of triphenyl bismuth, which specifically comprises the following steps: step 1, in a nitrogen atmosphere, adding a 2-methyltetrahydrofuran solution and a catalyst into magnesium powder, then adding chlorobenzene, stirring at room temperature, then slowly adding the 2-methyltetrahydrofuran solution of the chlorobenzene, and after dropwise adding is completed, carrying out a reaction for 2-4 hours; continuously reacting to obtain a 2-methyltetrahydrofuran solution of phenylmagnesium chloride; step 2, slowly adding the 2-methyltetrahydrofuran solution of phenylmagnesium chloride obtained in the step 1 into the 2-methyltetrahydrofuran solution of bismuth trichloride at room temperature, heating to continue reaction after dropwise adding is completed, and cooling to room temperature after the reaction is completed to obtain a triphenylbismuth mixed solution; and step 3, slowly adding pure water into the triphenyl bismuth mixed solution obtained in the step 2 to carry out quenching reaction, then separating out a water phase, concentrating an organic phase to obtain a crude product, and crystallizing and purifying the crude product with ethanol to obtain a pure triphenyl bismuth product. The process operation steps are reduced, and the process wastewater amount is reduced.

The invention discloses a method for producing ecological primary explosive - basic bismuth(III) salt of 5,5 '-bis-azotetrazole and its using in ecological mixture for primer compositions of ammunition.

Aspects of the disclosure related to peripheral blocker compounds for use in reducing peripheral side effects of anti-CNS disease drugs.

The invention relates to a carboxy ligand such as those defined via the general formula (I) specified in the following text. The invention additionally relates to a bismuth-containing catalyst such as those according to the general formula (II), wherein the bismuth-containing catalyst comprises carboxy ligands of the general formula (I). The invention additionally relates to a method for producing such a carboxy ligand and to a method for producing such a bismuth-containing catalyst. During the production of the carboxy ligand according to the invention, a precursor of a ligand according to the general formula (III) is likewise obtained according to the invention. The invention also relates to the use of such a bismuth-containing catalyst for producing compounds which contain a urethane group.

Provided are a molded article having excellent antibacterial and antiviral activities and a method for producing the same with good processability, a masterbatch which makes it possible to provide the molded article and the production method, a thermoplastic resin composition, and methods for producing the same. More specifically, provided are: a masterbatch which contains an antibacterial / antiviral agent which is at least one selected from the group consisting of a fatty acid metal salt, a metal complex of a hetero-atom-containing ligand and a metal ion, and a metal complex of a hetero-atom-containing ligand and a fatty acid metal salt, wherein the metal in each of the fatty acid metal salt, the metal complex of a hetero-atom-containing compound ligand and a metal ion, and the metal complex of a hetero-atom-containing compound ligand and a fatty acid metal salt is independently a lanthanoid, bismuth, manganese, magnesium, lead, yttrium, cobalt, or copper; a resin composition prepared by melt-kneading the masterbatch with a thermoplastic resin; a molded article produced by melt-molding the resin composition; and methods for producing the same.

Bismuth-containing precursor compositions and a method of depositing the precursor on a substrate to form a bismuth-containing film are provided. The bismuth-containing precursor is of the formula: BiL1L2L3, wherein each of L1, L2, or L3 independently is at least one of a hydrogen, an alkyl, an alkenyl, an alkynyl, an aryl, a cycloalkyl, an alkoxy, an oxysilyl, an alkoxyalkyl, an aralkyl, a thiol, a xanthate, a thioester, an amino, an amidine, a guanidine, a carbonyl, a halogen, or any combination thereof, or at least two of L1, L2, or L3 are bonded to form a cyclic ring.

The present invention relates to a simple, safe and ecofriendly process for producing a bismuth or a zinc boron carboxylate comprising mixing carboxylic acids with metal oxide by adding boric acid esters. The present invention also provides the use of bismuth or zinc boron carboxylate as polyurethane catalyst preferably in coatings, adhesives, sealants, elastomers, flexible foams and rigid foams.

The present invention relates to a novel precursor for forming a metal-containing thin film, a method for forming a thin film using same, and a device including the thin film and, more specifically, to a novel precursor for forming a metal-containing thin film to allow high deposition temperatures and have low viscosity properties, a method for forming a thin film using same, and a device including the thin film.

The present invention relates to a metal complex, a semiconductor layer comprising the metal complex and an organic electronic device comprising at least one metal complex thereof.

The present invention provides: a bismuth compound represented by chemical formula 1, which can be effectively usable as a thin film precursor; and a composition for forming a thin film, comprising same. In addition, the present invention provides a method for synthesizing bismuth selenide (Bi2Se3) with excellent uniformity and high purity by using the composition for forming a thin film. [Chemical formula 1] (In chemical formula 1, R1) to R12 are each independently linear or branched C1-C10 alkyl.)

The present application provides organic mixed metal-oxygen cluster compounds having the general chemical formula: (M1): a (M2) b (M3) c O g (L1) x (L2) y (L3) z where M1 is selected from at least one of Ti, Zr, and Hf; M2 is selected from at least one of Bi, Te, Sn, Pt, Ag, and Au; M3 is selected from at least one of Fe, Ni, Co, and Cu; L1, L2, and L3 are each selected from organic ligands, which can be coordinated to a metal and contain at least one of O, S, Se, N, and P functioning as a coordination atom; a, b, g, x, y, and z are all natural numbers equal to or greater than 1, and c is a natural number equal to or greater than 0. The present application further provides a patterning material containing the organic mixed metal-oxygen cluster compound, a semiconductor device containing the patterning material, a terminal, and a method for patterning a substrate surface. In the method for patterning a substrate surface in the present application, a pattern with small edge roughness can be realized at high resolution using a simple material.

An organometallic compound, composition, and dry photoresist or hardmask for extreme ultraviolet (EUV) lithography are disclosed. The organometallic compound includes at least one bismuth element selected from Bi(III) and Bi(V). The organometallic compound also includes at least one C1 to C6 alkyl ligand and at least one terminal or bridging ligand A (O, S, or N-R, where the R group in N-R is H or a C1 to C6 alkyl) bonded to the bismuth element. Methods for preparing the dry photoresist or hardmask composition and for using the composition to form patterned material features on a substrate are disclosed as well.

The present invention provides a poor metal cluster compound that makes it possible to obtain a photosensitive composition that is highly useful as a photoresist capable of forming an ultrafine pattern.　A poor metal cluster compound according to the present invention is characterized by containing a poor metal atom, a carboxylate ligand A, and an oxo ligand and / or a hydroxo ligand, the carboxylate ligand having an alicyclic structure that binds to a carboxylate group. The poor metal atom is preferably bismuth, antimony, indium, or the like.　

To provide a poor metal cluster compound capable of obtaining a photosensitive composition having high practicality as a photoresist capable of forming an ultrafine pattern.SOLUTION: The poor metal cluster compound includes a poor metal atom, a carboxylate ligand A, and an oxo ligand and / or a hydroxo ligand, wherein the carboxylate ligand has an alicyclic structure bonded to a carboxylate group, and bismuth, antimony, indium and the like are suitable as the poor metal atom.SELECTED DRAWING: None

The present invention is a method for producing a thin film in which a bismuth metal thin film is formed using a bismuth compound represented by general formula (1) and at least one substance selected from the group consisting of Bi (SiMe3) 3 and a reducing gas, and a raw material for forming a thin film. In general formula (1), R1 represents a hydrogen atom or a hydrocarbon group having 1-5 carbon atoms, and R2, R3, and R4 each independently represent an alkyl group having 1-3 carbon atoms.

The present application discloses an organometallic compound for extreme ultraviolet (EUV) lithography, a composition, and a dry photoresist or hard mask. The organometallic compound contains at least one bismuth element selected from the group consisting of Bi (III) and Bi (V). The organometallic compound also comprises at least one C1 to C6 alkyl ligand bonded to the bismuth element and at least one terminal or bridging ligand A (O, S or N-R, where the R group in N-R is H or C1 to C6 alkyl). Methods of making the dry photoresist or hardmask compositions and methods of using the compositions to form patterned material features on a substrate are also disclosed.

The present invention relates to polycyclic compounds and their uses.Specifically, the compounds of the present invention have the structure shown in formula I, wherein the definitions of each group and substituent are as described herein, and the present invention further discloses the preparation method of said compounds and their use in regulating and treating the related diseases caused by the abnormal activity of YAP / TEAD. [Formula 1] JPEG2024530956000247.jpg2362

Bismuth-containing precursor compositions and a method of depositing the precursor on a substrate to form a bismuth-containing film are provided. The bismuth-containing precursor is of the formula: BiL1L2L3, wherein each of L1, L2, or L3 independently is at least one of a hydrogen, an alkyl, an alkenyl, an alkynyl, an aryl, a cycloalkyl, an alkoxy, an oxysilyl, an alkoxyalkyl, an aralkyl, a thiol, a xanthate, a thioester, an amino, an amidine, a guanidine, a carbonyl, a halogen, or any combination thereof, or at least two of L1, L2, or L3 are bonded to form a cyclic ring.

The present invention provides a method of producing a thin-film and a thin-film forming raw material for forming a bismuth metal thin-film or an antimony metal thin-film by using a compound represented by the following general formula (1) and a compound represented by the following general formula (2). In the general formula (1), M1 represents trivalent bismuth or trivalent antimony. In the general formula (2), M2 represents trivalent bismuth or trivalent antimony, and L1, L2, and L3 each independently represent an alkyl group having 1 or more and 10 or less carbon atoms, a halogen atom, an alkoxy group having 1 or more and 10 or less carbon atoms, or a group represented by the following general formula (3), provided that M1 and M2 represent the same metal atom. In the general formula (3), R1 and R2 each independently represent a hydrogen atom, an alkyl group having 1 or more and 10 or less carbon atoms, or -SiR3R4R5, R3, R4, and R5 each independently represent an alkyl group having 1 or more and 10 or less carbon atoms, and * represents a bonding site with M2.

Provided are: a compound with which it is possible to achieve miniaturization of a circuit pattern; and a photosensitive composition which contains said compound.　A compound according to the present invention has a metal atom and a ligand, and is characterized in that the ligand includes a partial structure that is represented by formula (1). In formula (1), R1 and R2 each represent a hydrogen atom or an arbitrary substituent, may be the same as or different from each other, and may form a ring. However, R1 and R2 are not hydrogen atoms at the same time. R3 represents an α-hydrogen-containing substituent on the oxygen side of the carbamate.

The application relates to the technical field of photoelectric materials, in particular to a Bi-based perovskite thin film crystal phase preparation method and application. The Bi-based perovskite thin film crystal phase comprises a BiI3 layer, an ammonium salt with a melting point below 200 DEG C is gasified, the BiI3 layer is placed in a gas phase environment formed by the ammonium salt, a uniform and dense non-lead bismuth-based perovskite thin film can be obtained, and the gas phase environment is used for changing the lattice direction and morphology of the Bi-based perovskite thin film. The method can solve the problem of the traditional Bi-based perovskite layered structure and the non-dense thin film, and the thin film has an important role in the research of non-toxic green perovskite materials and the development of photoelectric devices.

The invention relates to a high-valence bismuth compound, a resist composition and a pattern forming method. The present invention addresses the problem of providing a non-chemically amplified resist composition having excellent sensitivity and resolution in optical lithography using high-energy rays, particularly electron beam (EB) lithography and EUV lithography, and a pattern forming method using the resist composition. [Solution] A high-valence bismuth compound represented by formula (1).

The present invention relates to a method for preparing a p-type semiconductor layer, a p-type semiconductor layer obtainable by said method, an organic electronic device comprising said p-type semiconductor layer, a display device comprising said organic electronic device, a metal compound, and the use of said metal compound in a p-type semiconductor layer.

Aspects of the disclosure related to peripheral blocker compounds for use in reducing peripheral side effects of anti-CNS disease drugs.