17results about "Bismuth organic compounds" patented technology

Provided is a bismuth compound for a photoresist, the bismuth compound being represented by chemical formula 1: <Chemical formula 1> In chemical formula 1, R1 to R5 are each independently selected from the group consisting of: hydrogen; deuterium; a C1-C20 alkyl group substituted or unsubstituted with at least one among deuterium, a halogen, and a cyano group; and a C6-C20 aryl group substituted or unsubstituted with at least one among deuterium, a halogen, and a cyano group, and at least one of R4 or R5 is a C1-C20 alkyl group substituted with at least one of a halogen or a cyano group.

A resist composition comprising a hypervalent bismuth compound having formula (1) and a solvent is provided. When processed by photolithography using high-energy radiation, the resist composition exhibits a high sensitivity and resolution. The non-chemically-amplified resist composition exhibits a high sensitivity and resolution when processed by photolithography using high-energy radiation, typically EB and EUV lithography.

Aspects of the disclosure related to peripheral blocker compounds for use in reducing peripheral side effects of anti-CNS disease drugs.

Bismuth-containing precursor compositions and a method of depositing the precursor on a substrate to form a bismuth-containing film are provided. The bismuth-containing precursor is of the formula: BiL1L2L3, wherein each of L1, L2, or L3 independently is at least one of a hydrogen, an alkyl, an alkenyl, an alkynyl, an aryl, a cycloalkyl, an alkoxy, an oxysilyl, an alkoxyalkyl, an aralkyl, a thiol, a xanthate, a thioester, an amino, an amidine, a guanidine, a carbonyl, a halogen, or any combination thereof, or at least two of L1, L2, or L3 are bonded to form a cyclic ring.

The present invention relates to a novel precursor for forming a metal-containing thin film, a method for forming a thin film using same, and a device including the thin film and, more specifically, to a novel precursor for forming a metal-containing thin film to allow high deposition temperatures and have low viscosity properties, a method for forming a thin film using same, and a device including the thin film.

The present invention relates to a metal complex, a semiconductor layer comprising the metal complex and an organic electronic device comprising at least one metal complex thereof.

The present invention provides: a bismuth compound represented by chemical formula 1, which can be effectively usable as a thin film precursor; and a composition for forming a thin film, comprising same. In addition, the present invention provides a method for synthesizing bismuth selenide (Bi2Se3) with excellent uniformity and high purity by using the composition for forming a thin film. [Chemical formula 1] (In chemical formula 1, R1) to R12 are each independently linear or branched C1-C10 alkyl.)

The present application provides organic mixed metal-oxygen cluster compounds having the general chemical formula: (M1): a (M2) b (M3) c O g (L1) x (L2) y (L3) z where M1 is selected from at least one of Ti, Zr, and Hf; M2 is selected from at least one of Bi, Te, Sn, Pt, Ag, and Au; M3 is selected from at least one of Fe, Ni, Co, and Cu; L1, L2, and L3 are each selected from organic ligands, which can be coordinated to a metal and contain at least one of O, S, Se, N, and P functioning as a coordination atom; a, b, g, x, y, and z are all natural numbers equal to or greater than 1, and c is a natural number equal to or greater than 0. The present application further provides a patterning material containing the organic mixed metal-oxygen cluster compound, a semiconductor device containing the patterning material, a terminal, and a method for patterning a substrate surface. In the method for patterning a substrate surface in the present application, a pattern with small edge roughness can be realized at high resolution using a simple material.

An organometallic compound, composition, and dry photoresist or hardmask for extreme ultraviolet (EUV) lithography are disclosed. The organometallic compound includes at least one bismuth element selected from Bi(III) and Bi(V). The organometallic compound also includes at least one C1 to C6 alkyl ligand and at least one terminal or bridging ligand A (O, S, or N-R, where the R group in N-R is H or a C1 to C6 alkyl) bonded to the bismuth element. Methods for preparing the dry photoresist or hardmask composition and for using the composition to form patterned material features on a substrate are disclosed as well.

The present invention is a method for producing a thin film in which a bismuth metal thin film is formed using a bismuth compound represented by general formula (1) and at least one substance selected from the group consisting of Bi (SiMe3) 3 and a reducing gas, and a raw material for forming a thin film. In general formula (1), R1 represents a hydrogen atom or a hydrocarbon group having 1-5 carbon atoms, and R2, R3, and R4 each independently represent an alkyl group having 1-3 carbon atoms.

The present invention relates to polycyclic compounds and their uses.Specifically, the compounds of the present invention have the structure shown in formula I, wherein the definitions of each group and substituent are as described herein, and the present invention further discloses the preparation method of said compounds and their use in regulating and treating the related diseases caused by the abnormal activity of YAP / TEAD. [Formula 1] JPEG2024530956000247.jpg2362

Bismuth-containing precursor compositions and a method of depositing the precursor on a substrate to form a bismuth-containing film are provided. The bismuth-containing precursor is of the formula: BiL1L2L3, wherein each of L1, L2, or L3 independently is at least one of a hydrogen, an alkyl, an alkenyl, an alkynyl, an aryl, a cycloalkyl, an alkoxy, an oxysilyl, an alkoxyalkyl, an aralkyl, a thiol, a xanthate, a thioester, an amino, an amidine, a guanidine, a carbonyl, a halogen, or any combination thereof, or at least two of L1, L2, or L3 are bonded to form a cyclic ring.

The invention relates to a high-valence bismuth compound, a resist composition and a pattern forming method. The present invention addresses the problem of providing a non-chemically amplified resist composition having excellent sensitivity and resolution in optical lithography using high-energy rays, particularly electron beam (EB) lithography and EUV lithography, and a pattern forming method using the resist composition. [Solution] A high-valence bismuth compound represented by formula (1).

The present invention relates to a method for preparing a p-type semiconductor layer, a p-type semiconductor layer obtainable by said method, an organic electronic device comprising said p-type semiconductor layer, a display device comprising said organic electronic device, a metal compound, and the use of said metal compound in a p-type semiconductor layer.

Aspects of the disclosure related to peripheral blocker compounds for use in reducing peripheral side effects of anti-CNS disease drugs.

To provide a non-chemically amplified resist composition excellent in sensitivity and resolution in photolithography using high energy rays, especially electron beam (EB) lithography and EUV lithography, and to provide a pattern forming method using the resist composition.SOLUTION: A hypervalent bismuth compound represented by formula (1) and a resist composition containing the hypervalent bismuth compound as a main component are provided. Wherein R1 and R2 each independently represent a halogen atom or a hydrocarbyl group having 1 to 10 carbon atoms which may contain a hetero atom; A1, A2 and A3 each independently represent a hydrocarbyl group having 2 to 20 carbon atoms which contains a polymerizable functional group and may contain a hetero atom; Ar1, Ar2 and Ar3 each independently represent an arylene group having 6 to 20 carbon atoms, and some or all of the hydrogen atoms on the aromatic ring may be substituted with a halogen atom or a hydrocarbyl group having 1 to 2 carbon atoms which may contain a hetero atom. ) SELECTED DRAWING: None