Radiation-resistant static random access memory (SRAM) sequential control circuit and sequential processing method therefor

Abstract

The invention discloses a radiation-resistant static random access memory (SRAM) sequential control circuit and a sequential processing method therefor. The radiation-resistant SRAM sequential control circuit solves the problem of poor reliability of the existing radiation-resistant SRAM sequential control circuit in a radiation environment. A technical scheme of the radiation-resistant SRAM sequential control circuit provided by the invention comprises that a memory cell row and a memory cell line are added in a memory array and are used for tracking states of key signal lines comprising word lines and bit lines of a memory; in each read-write process, the memory selects a row and a line in a tracking unit and feeds back states of word lines and bit lines of the tracking unit to a sequential control unit; and the sequential control unit realizes data writing and reading according to a feedback signal and a SRAM internal sequential control signal produced by an input clock. Because of utilization of a memory cell tracking technology, the whole time sequence can be adjusted automatically by change of a memory rate. Through the sequential processing method for the radiation-resistant SRAM sequential control circuit, when a working rate of an internal circuit of a SRAM is influenced under the radiation, a correct sequential signal can still be produced so that incorrect operation is avoided.

Description

technical field [0001] The invention relates to an SRAM timing control circuit, in particular to a radiation-resistant SRAM timing control circuit, and also to a timing processing method using the radiation-resistant SRAM timing control circuit. Background technique [0002] Due to its low power consumption and high speed, Static Random Access Memory (SRAM) is widely used in aerospace electronic systems, nuclear detection instruments, high-energy physics experiments and medical imaging in the fields of space science and nuclear science and technology. System information storage device. There are many cosmic rays or high-energy particles in these application environments, and semiconductor devices are susceptible to various radiation effects caused by the radiation of these particles, including non-ionizing radiation effects and ionizing radiation effects. The total dose ionizing radiation effect is a type of ionizing radiation effect that introduces additional electron-hole...

AI Technical Summary

Problems solved by technology

[0005] In order to overcome the deficiency of poor reliability of the existing radiation-resistant SRAM timing control circuit in the radiation environment, the present invention provides a radiation-resistant SRAM timing control circuit

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