Method for preparing PZT-based piezoelectric ceramic thick film material of silver electrode through low-temperature cofiring
A technology of low-temperature co-firing and silver electrodes, applied in piezoelectric/electrostrictive/magnetostrictive devices, circuits, electrical components, etc.
Active Publication Date: 2013-01-09
TIANJIN UNIV
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Problems solved by technology
[0005] At present, there is no relevant report to illustrate that the high-performance piezoelectric ceramic thick film material reported by the present invention is obtained by using silver electrodes and screen printing.
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[0042] The raw materials used in the present invention are commercially available analytically pure raw materials.
[0043] A method for preparing a PZT-based piezoelectric ceramic thick-film material for a silver electrode by co-firing at a low temperature has the following steps:
[0044] (1) Ingredients
[0045]By Pb (Zr 0.52 Ti 0.48 )O 3 , Pb 0.99 Sb 0.01 (Zr 0.52 Ti 0.48 )O 3 or 0.25Pb(Zn 1 / 3 Nb 2 / 3 )-0.75Pb 0.95 La 0.05 (Zr 0.53 Ti 0.47 ) 0.9875 O 3 The stoichiometric ratio of the raw material Pb was weighed 3 O 4 , ZrO 2 , TiO 2 , ZnO, Nb 2 O 5 , Sb 2 O 3 and La 2 O 3 , mixed, and packed into a nylon tank, the ball milling medium is water and agate balls, ball: material: the weight ratio of water is 2: 1: 0.6, ball milling 3h, ball milling speed is 750r / min, then the mixture is put into the oven Dry at 110°C, then grind in a mortar, and pass through a 60-mesh sieve;
[0046] (2) pre-burning
[0047] Put the ground and sieved powder in step (1...
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Abstract
The invention discloses a method for preparing a PZT-based piezoelectric ceramic thick film material of a silver electrode through low-temperature cofiring. According to the invention, piezoelectric slurry is based on the formula of a PZT-based system, Pb(Zr0.52Ti0.48)O3, Pb0.99Sb0.05Pb0.95La0.05(Zr0.53Ti0.47)0.9875O3 or 0.25Pb(Zn1 / 3Nb2 / 3)-0.75Pb0.95La0.05(Zr0.53Ti0.47)0.9875O3 is weighed at a stoichiometric ratio as a raw material, merchant silver paste serves as an electrode material, an electrode and a piezoelectric thick film layer are prepared by adopting a screen printing technique, and are sintered by adopting a cofiring technology at a low temperature of 825-850 DEG C, and a piezoelectric ceramic thick film material with a higher d33 value and lower dielectric loss is prepared through adjusting and improving a synthetic process, a binder removal process and a polarization system. The method disclosed by the invention has the advantages of simple components and processing steps, easy operation, good repeatability and high yield, and is mainly applied to a piezoelectric microtransducer, a microshifter and the like.
Description
technical field [0001] The invention belongs to a ceramic composition characterized by components, in particular to a preparation method of a low-temperature co-fired lead zirconate titanate (PZT)-based piezoelectric ceramic thick film material Background technique [0002] With the development of electronic devices in the direction of miniaturization and miniaturization, bulk piezoelectric materials with large size, heavy weight, and high operating voltage can no longer meet people's needs for making miniaturized and integrated electronic devices. Piezoelectric ceramic thick film materials and devices with the advantages of piezoelectric ceramics and piezoelectric thin films have gradually become a hot spot in scientific research and a substitute for bulk piezoelectric devices in the future. As the core part of various micro sensors and actuators, piezoelectric ceramic thick film materials have also become the development direction of piezoelectric ceramic materials. Compa...
Claims
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IPC IPC(8): C04B35/622C04B35/472C03C12/00H01L41/273H01L41/047H01L41/187H10N30/053H10N30/853H10N30/87
Inventor 马卫兵白洋孙清池葛琴雯刘志华
Owner TIANJIN UNIV