Method for manufacturing semiconductor material

Abstract

The invention discloses a method for manufacturing a semiconductor material, which comprises the steps as follows: A) selecting an initial substrate; placing the initial substrate in an inner cavity of a metal organic compound chemical gas phase depositing device and implementing pre-treatment on an outer surface of the chemical gas phase depositing device; B) through a metal organic compound chemical gas phase deposition method, forming an initial GaN layer on the outer surface of the initial substrate by means of epitaxial growth; C) pausing the epitaxial growth of the GaN; implementing in-situ deposition on the surface of the initial GaN layer to form an SiNx medium thin-film layer with a porous structure; D) continuing the epitaxial growth of the GaN by the metal organic compound chemical gas phase deposition method; promoting the epitaxial growth of the GaN from holes of the SiNx medium thin-film layer and promoting the transverse epitaxial growth of the GaN until the outer surface of the initial GaN layer is covered to form a GaN epitaxial layer.

Description

technical field [0001] The invention relates to a preparation method of a semiconductor material. Background technique [0002] Material quality is the key to device performance: Although GaN materials and GaN-based light-emitting diodes are already large-scale industrialized technologies, their market size has reached more than tens of billions of dollars; however, the existing GaN crystal thin films used in the manufacture of GaN-based light-emitting diodes Growth techniques are not directly transferable to the fabrication of GaN power electronics. This is because GaN power electronic devices are different from low-voltage devices such as GaN light-emitting diodes, and have more stringent requirements on the crystal quality of the GaN epitaxial layer (the working voltage of GaN power electronic devices is above several hundred volts; the working voltage of GaN light-emitting diodes is generally within ±5 volts). [0003] At present, GaN devices dominated by light-emittin...

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Problems solved by technology

[0007] In view of the above problems, the main purpose of the present invention is to provide a method for preparing semiconductor materials, which can greatly reduce the defect density in the GaN epitaxial layer, and realize the low-cost epitaxial growth of GaN thin films with high crystal quality

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