Multi-chip positive packaging structure for embedding basic island by first packaging and second etching, and manufacturing method for multi-chip positive packaging structure

Abstract

The invention relates to a multi-chip positive packaging structure for embedding a basic island by first packaging and second etching, and a manufacturing method for the multi-chip positive packaging structure. The multi-chip positive packaging structure comprises the basic island (1) and pins (2), wherein chips (4) are arranged on the front face of the basic island (1); the front faces of the chips (4) are connected with the front faces of the pins (2) through metal wires (5); plastic materials (6) wrap the surrounding regions of the basic island (1) and the pins (2) as well as the chips (4) and the metal wires (5); small holes (7) are formed in the surfaces of the plastic materials (6) on the lower parts of the pins (2) and are communicated with the back faces of the pins (2); and metal balls (9) are arranged in the small holes (7) and are in contact with the back faces of the pins (2). The multi-chip positive packaging structure has the advantages that the manufacturing cost is reduced, the safety and the reliability of a package body are improved, the environment pollution is reduced, and design and manufacturing of a high-density line can be really realized.

Description

technical field [0001] The invention relates to a multi-chip front-mounting first packaging and then etching base island embedded packaging structure and a manufacturing method thereof. It belongs to the technical field of semiconductor packaging. Background technique [0002] The manufacturing process flow of the traditional high-density substrate package structure is as follows: [0003] Step 1, see Figure 38 , take a substrate made of glass fiber material, [0004] Step two, see Figure 39 , opening holes at desired locations on the fiberglass substrate, [0005] Step three, see Figure 40 , coated with a layer of copper foil on the back of the glass fiber substrate, [0006] Step 4, see Figure 41 , fill the conductive material in the position where the glass fiber substrate is punched, [0007] Step five, see Figure 42 , coated with a layer of copper foil on the front of the glass fiber substrate, [0008] Step six, see Figure 43 , coated with a photoresist...

AI Technical Summary

Problems solved by technology

[0019] 3. Glass fiber itself is a kind of foaming material, so it is easy to absorb moisture and moisture due to the storage time and environment, which directly affects the safety capability or reliability level of reliability;

[0020] 4. The surface of the glass fiber is covered with a copper foil metal layer thickness of about 50-100 μm, and the etching distance between the metal layer line and the line can only achieve an etching gap of 50-100 μm due to the characteristics of the etching factor (etching factor: minimum The best manufacturing capability is that the etching gap is approximately equal to the thickness of the object being etched, see Figure 50 ), so it is impossible to truly design and manufacture high-density circuits;

[0022]6. Also because the entire substrate material is made of glass fiber, the thickness of the glass fiber layer is obviously increased by 100~150μm, and it cannot be really ultra-thin encapsulation;

[0023]7. Due to the large difference in material characteristics (expansion coefficient) of the traditional glass fiber plus copper foil technology, it is easy to cause stress deformation in the harsh environment process, directly Affects the accuracy of component loading and the adhesion and reliability of components and substrates

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