Photoinjection-type chaotic photonic integration device and preparation method thereof
A technology of photon integration and light injection, which is applied in laser devices, semiconductor laser devices, optics, etc., can solve the problems that the bandwidth cannot exceed 10 GHz, the restricted relaxation oscillation frequency of chaotic lasers, etc., and achieve low production costs, increased bandwidth, The effect of stable performance
Inactive Publication Date: 2014-04-02
DALIAN UNIV OF TECH
View PDF5 Cites 1 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Prior art [1-4] due to its own structure and optical feedback, the generated chaotic laser is limited by the relaxation oscillation frequency of a single distributed feedback semiconductor laser, and the bandwidth cannot exceed 10 GHz
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0024] The optical injection type chaotic photon integrated device of the present invention includes: a master distributed feedback semiconductor laser DFB 1 , a semiconductor optical amplifier SOA 2 , a passive optical waveguide 3 and a slave distributed feedback semiconductor laser DFB 4 . The main distributed feedback semiconductor laser DFB 1 generates continuous wave (continuous wave, CW) laser, which is amplified by the semiconductor optical amplifier SOA 2 and enters the passive optical waveguide 3, and then injected into the slave distributed feedback semiconductor laser DFB 4. By adjusting the semiconductor optical amplifier SOA 2, the control of the injection intensity is realized; by adjusting the central wavelength detuning between the main distributed feedback semiconductor laser DFB 1 and the slave distributed feedback semiconductor laser DFB 4, the slave distributed feedback semiconductor laser produces chaos in the bandwidth laser.
[0025] Attached below fig...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| length | aaaaa | aaaaa |
| length | aaaaa | aaaaa |
| length | aaaaa | aaaaa |
Login to View More
Abstract
The invention discloses a photoinjection-type chaotic photonic integration device and a preparation method thereof. The photoinjection-type chaotic photonic integration device is characterized in that a principal distributed feedback semiconductor laser generates continuous wave laser, and the laser enters a passive waveguide after being amplified by a semiconductor optical amplifier, and then is injected into a subordinate distributed feedback semiconductor laser. Chaotic laser of a bandwidth can be generated by the subordinate distributed feedback semiconductor laser by adjusting the central wavelength between the semiconductor optical amplifier and the principal distributed feedback semiconductor laser as well as the subordinate distributed feedback semiconductor laser. According to the invention, photonic integration can be realized by injecting light into the semiconductor laser to generate the chaotic laser of the bandwidth, so that the chaotic laser performance is improved, the device size is greatly reduced, the stability of the system is improved, and the method has a simple process flow, is low in implementation cost, and has a broad application prospect in the future field of optical communication and photonic signal processing.
Description
technical field [0001] The invention belongs to the technical field of optoelectronic devices, and in particular relates to an optical injection type photon integrated device, which realizes the generation of broadband chaotic laser by a single photon device, and can be applied to the fields of confidential optical communication, optical network, photon signal processing and the like. Background technique [0002] In recent years, the generation and application of chaotic lasers have received more and more attention. Semiconductor lasers have the advantages of small size, low price, and wide application range. Therefore, chaotic laser generation based on semiconductor lasers has attracted special attention and research. At present, chaotic laser has great advantages and application potential in the fields of secure communication, automobile anti-collision radar, optical time domain reflectometer, high-speed true random code generator, sensing and optical coherence tomography...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/40G02F1/39
Inventor 赵清春殷洪玺窦欣宇曹暾
Owner DALIAN UNIV OF TECH