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Photoresist film formation resin and preparation method thereof

A film-forming resin and photoresist technology, applied in the field of photoresist film-forming resin and its preparation, can solve problems such as inability to realize high-precision microelectronic processing, avoid deformation, improve yield, and improve thermal stability Effect

Active Publication Date: 2013-01-23
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, in the process of processing microelectronic products, it needs to be processed in a high-temperature environment. At this time, since the glass transition temperature of the phenolic resin in the photoresist is 70-120°C, an excessively high ambient temperature will cause The graphics are deformed, making it impossible to achieve high-precision microelectronics processing

Method used

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  • Photoresist film formation resin and preparation method thereof
  • Photoresist film formation resin and preparation method thereof
  • Photoresist film formation resin and preparation method thereof

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preparation example Construction

[0035] Corresponding to the above-mentioned photoresist film-forming resin, the present invention also provides a preparation method of photoresist film-forming resin, such as figure 1 shown, including:

[0036] S1. Mix monomer A represented by formula (1), monomer B represented by formula (2), monomer C represented by formula (3) and an initiator into the solvent to form a first mixed solution.

[0037]

[0038] In the process of preparing photoresist film-forming resin, under the protection of nitrogen, a certain amount of solvent is added in the reaction vessel, and the above-mentioned monomer A, monomer B, monomer C and initiator are Proportional mixing, adding to the reaction vessel and mixing monomer A, monomer B, monomer C and initiator in the solvent uniformly by means of stirring to form the first mixed solution.

[0039] Wherein, the solvent is 8-12 times of the total mass of the monomer.

[0040] Further, the solvent may be dioxane, tetrahydrofuran, pyridine, d...

Embodiment 1

[0066] In the photoresist film-forming resin described in this embodiment, the substituent R in the amino group of the monomer A 5 and R 6 Respectively methyl; substituent R 2 and R 4 is hydroxyl; substituent R 1 and R 3 is a methyl group; the value of n is 1; the substituent R on the benzene ring of the monomer B 7 is a hydroxyl group; the substituent R in monomer C 8 is a carboxyl group; the composition generated after polymerization is shown in formula (4):

[0067]

[0068] Wherein, the percentages of the amounts of the three substances in the above composition are respectively 35%, 35% and 30% in sequence.

[0069] After testing, the weight average molecular weight of the photoresist film-forming resin is 44300, and the glass transition temperature is 240°C, which improves the thermal stability of the photoresist film-forming resin, making the photoresist film-forming resin applicable to High temperature processing. and the substituent R in monomer C of formula...

Embodiment 2

[0083] In the photoresist film-forming resin described in this embodiment, the substituent R in the amino group of the monomer A 5 is a methylene chain connected with a heterocyclic group; R 6 is methyl; substituent R 1 -R 4 is hydrogen; the value of n is 1; the substituent R in the benzene ring of monomer B 7 is hydrogen; substituent R in monomer C 8 is a carboxyl group; the composition generated after polymerization is shown in formula (5):

[0084]

[0085] Wherein, the percentages of the amounts of the three substances in the composition represented by formula (5) are 40%, 40% and 20% respectively in sequence.

[0086]After testing, the weight-average molecular weight of the photoresist film-forming resin is 45270, and the glass transition temperature is 245°C, thereby further improving the thermal stability of the photoresist film-forming resin and making the photoresist film-forming resin more stable. Suitable for high temperature processing. and the substituent...

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Abstract

The invention discloses photoresist film formation resin and a preparation method of the resin, belonging to the micro-electronic processing field, and aiming at solving the problems that in the prior art, when phenolic resin is taken as the photoresist film formation resin, the glass-transition temperature is lower, and the resin is not suitable for being processed at high temperature. The photoresist film formation resin is formed by polymerizing 20-60% of monomer A shown in formula (1), 20-60% of monomer B shown in formula (2) and 10-60% of monomer C shown in formula (3) based on weight percentage and n is an integer ranging from 1 to 10. The formula (2) and the formula (3) are shown in the description.

Description

technical field [0001] The invention relates to the field of microelectronic processing, in particular to a photoresist film-forming resin and a preparation method thereof. Background technique [0002] With the development of microelectronics processing technology, photoresist has been widely used in the industry. The film-forming resins in commonly used positive photoresists are mostly phenolic resins. Because the monomers are phenol or substituted phenol and formaldehyde, the raw materials used in the preparation process are easier to obtain and easier to synthesize. The generated phenolic resin has a certain alkali solubility, so that the photoresist can be developed through an alkaline solution, which is economical and environmentally friendly. [0003] However, in the process of processing microelectronic products, it needs to be processed in a high-temperature environment. At this time, since the glass transition temperature of the phenolic resin in the photoresist i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004G03F7/039C08F220/36C08F220/34C08F232/04C08F220/06C08F220/14
Inventor 刘陆薛建设惠官宝
Owner BOE TECH GRP CO LTD