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Integrating method for high-sensitivity temperature-controlled thick film hybrid integrated circuit

A thick-film hybrid and integrated circuit technology, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve problems that are not highly sensitive temperature-controlled hybrid integrated circuits, so as to improve long-term reliability, save integration space, The effect of broad market prospects

Inactive Publication Date: 2015-03-04
GUIZHOU ZHENHUA FENGGUANG SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But this integrated circuit is not a high-sensitivity temperature-controlled hybrid integrated circuit

Method used

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  • Integrating method for high-sensitivity temperature-controlled thick film hybrid integrated circuit
  • Integrating method for high-sensitivity temperature-controlled thick film hybrid integrated circuit
  • Integrating method for high-sensitivity temperature-controlled thick film hybrid integrated circuit

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Embodiment

[0024] The FHTC40 temperature-controlled precision integrated voltage reference source developed by Guizhou Zhenhua Scenery Semiconductor Co., Ltd. is mainly used in the fields of precision measurement and precision control to provide a precise and low-temperature drift voltage reference for the system. The typical working environment temperature is -80°C to 180°C.

[0025] The core part of the device is a high-precision voltage reference chip, which is the main chip of the device, a self-made thick-film thermistor for temperature control signal acquisition, and a low-power precision operational amplifier chip for temperature control signal processing and amplification. The technology of the present invention-integrated three-dimensional hybrid integration technology of the thick film thermistor and the main chip of the temperature control device is used for production. The specific process is as follows:

[0026] ⑴ Selection of ceramic substrate: In order to facilitate the ra...

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Abstract

The invention discloses an integrating method for a high-sensitivity temperature-controlled thick film hybrid integrated circuit. The method comprises the steps of: printing and forming a thick film resistor, a metal conduction band and a metallic bonding area by using a screen printing method; printing and forming a thick film thermistor by using the screen printing method again; forming a thick film insulating medium layer and a thick film metalization layer which is required by sticking of chips on a thermistor thick film by using the same method; and directly installing and sticking a thermosensitive sensing signal treating chip, a temperature control device main chip, other active or passive elements and the like on a thick film base pipe by using a commonly hybrid integrated circuit assembling process, then performing bonding by using bonding wires, and finally sealing a pipe base and a pipe cap under a special atmosphere, so as to obtain a high-sensitivity temperature-controlled thick film hybrid integrated circuit device. According to the method, the thick film thermistor and the temperature control device main chip are in gapless atom contact in the maximum contact area, heat of the main chip can be fast transferred to the thermistor to the maximum degree, so as to realize high-sensitivity temperature-control.

Description

technical field [0001] The invention relates to an integrated circuit, in particular to a high-sensitivity temperature-controlled thick-film hybrid integrated circuit. Background technique [0002] In the original temperature-controllable hybrid circuit integration technology, two-dimensional planar integration technology is used on the hybrid integration surface of the temperature-controllable integrated circuit, and the separated thermal chip resistor, thermal sensor signal processing chip, temperature control The main chip of the device, other active or passive components, etc. are directly mounted on the thick film substrate, and then bonded with bonding wire (gold wire or silicon-aluminum wire) to complete the entire electrical connection, and finally in a specific atmosphere It is made by sealing the tube base and the tube cap. Due to the use of two-dimensional planar integration technology in the original technology, there will inevitably be a gap between the tempera...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/98
Inventor 杨成刚苏贵东杨萍
Owner GUIZHOU ZHENHUA FENGGUANG SEMICON
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