Power semiconductor laser with constant temperature control function and manufacturing method thereof

Abstract

The invention relates to a power semiconductor laser with a constant temperature control function and a manufacturing method thereof, which organically integrate a semiconductor laser chip, a semiconductor thermoelectric refrigerator and a thermistor with a negative temperature coefficient on the basis of the existing semiconductor laser chip manufacturing technology. The power semiconductor laserincludes: a semiconductor substrate, a first silicon dioxide layer, an n-type buffer layer, an n + Omega contact layer, an n electrode, an n-type cap layer, a p-type cap layer, a P electrode, a p+ Omega contact layer, an integrated TEC thermoelectric cooler, a semiconductor laser active region, a second silicon dioxide layer, a third silicon dioxide layer, an NTC thin film resistor, an NTC thin film resistor metal electrode and a thermoelectric cooler spherical electrode. The purposes of accurate temperature control and high reliability are achieved, and accurate control over photoelectric performance parameters of the semiconductor laser is achieved. The power semiconductor laser is widely applied to the fields of environment detection, communication, aerospace, aviation, ships, preciseinstruments, field operation, industrial control and the like, and has a wide market prospect.

Description

technical field [0001] The invention relates to a semiconductor laser device, in particular to a power semiconductor laser with a constant temperature control function and a manufacturing method thereof. Background technique [0002] The original semiconductor laser device is to separate the semiconductor laser chip (LD), semiconductor thermoelectric cooler (TEC), negative temperature coefficient thermistor (NTC), ceramic substrate carrier, etc., using traditional assembly techniques such as mounting and bonding. , sealed in a housing in a clean environment, such as figure 1 shown. Due to the use of discrete assembly technology in the original technology, the volume is large, the assembly procedure is complicated, the yield rate is low, and the consistency of process quality is difficult to guarantee. On the other hand, due to the use of discrete assembly technology, the heat conduction path is too long, resulting in The greatly extended thermal signal feedback speed will ...

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to provide a power semiconductor laser with constant temperature control function, the semiconductor laser chip (LD), semiconductor thermoelectric cooler (TEC), negative temperature The thermistor (NTC) with high coefficient is organically integrated in one body, which solves the problems of large volume, poor process quality consistency and insensitive temperature control caused by discrete assembly technology, so that the photoelectric performance parameters of semiconductor lasers cannot be precisely controlled.

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