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Semiconductor laser device with constant temperature control function and manufacturing method thereof

A technology of constant temperature control and laser devices, applied in semiconductor lasers, laser parts, lasers, etc., can solve the problems of insensitive temperature control, inability to precisely control the optoelectronic performance parameters of semiconductor lasers, and poor process quality consistency.

Pending Publication Date: 2020-07-03
广东鸿芯科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The object of the present invention is to provide a semiconductor laser device with a constant temperature control function, which organically integrates a semiconductor laser chip (LD), a semiconductor thermoelectric cooler (TEC), and a thermistor with a negative temperature coefficient (NTC). Solve the problems of large volume, poor process quality consistency and insensitive temperature control caused by discrete assembly technology, so that the photoelectric performance parameters of semiconductor lasers cannot be accurately controlled

Method used

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  • Semiconductor laser device with constant temperature control function and manufacturing method thereof
  • Semiconductor laser device with constant temperature control function and manufacturing method thereof
  • Semiconductor laser device with constant temperature control function and manufacturing method thereof

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Embodiment

[0075] 1. The integrated TEC p-type semiconductor 201 uses a p-type bismuth telluride semiconductor material.

[0076] 2. The p-type bismuth telluride semiconductor material is Bi 2 Te 3 -Sb 2 Te 3 .

[0077] 3. The thickness of the integrated TEC p-type semiconductor 201 is 0.2mm-0.6mm.

[0078] 4. The integrated TEC n-type semiconductor 202 uses an n-type bismuth telluride semiconductor material.

[0079] 5. The n-type bismuth telluride semiconductor material is Bi 2 Te 3 -Bi 2 Se 3 .

[0080] 6. The thickness of the integrated TEC n-type semiconductor 202 is 0.2mm-0.6mm.

[0081] 7. The materials of the integrated TEC first-layer refractory electrode 203 and the integrated TEC second-layer refractory electrode 207 are chromium, titanium, tungsten or gold.

[0082] 8. The material of the semiconductor substrate 6 is silicon, and the material of the n-type buffer layer 8 is gallium nitride.

[0083] 9. The material of the semiconductor substrate 6 is indium phosphide.

[0084] Using the in...

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Abstract

The invention relates to a manufacturing method of a semiconductor laser device with a constant temperature control function, which organically integrates a semiconductor laser chip, a semiconductor thermoelectric refrigerator and a thermistor with a negative temperature coefficient on the basis of the existing semiconductor laser chip manufacturing technology. The semiconductor laser device includes: a semiconductor substrate, a first silicon dioxide layer, an n-type buffer layer, an n+ Omega contact layer, an n electrode, an n-type cap layer, a p-type cap layer, a P electrode, a p+ Omega contact layer, an integrated TEC thermoelectric cooler, a semiconductor laser active region, a second silicon dioxide layer, an NTC thin-film resistor, an NTC thin-film resistor metal electrode and a thermoelectric cooler spherical electrode. The purposes of accurate temperature control and high reliability are achieved, and accurate control over photoelectric performance parameters of the semiconductor laser is achieved. The semiconductor laser device is widely applied to the fields of environmental atmosphere detection, communication, aerospace, aviation, ships, precise instruments, geologicalexploration, oil exploration, field operation, industrial control and the like, and has a wide market prospect.

Description

Technical field [0001] The invention relates to a semiconductor laser device, and in particular to a semiconductor laser device with a constant temperature control function and a manufacturing method thereof. Background technique [0002] The original semiconductor laser device uses traditional assembly techniques such as mounting and bonding of separate semiconductor laser chips (LD), semiconductor thermoelectric coolers (TEC), negative temperature coefficient thermistors (NTC), ceramic substrate carriers, etc. , Sealed in a shell in a clean environment, such as figure 1 Shown. The original technology uses discrete assembly technology, which is large in size, complex assembly procedures, low yield, and it is difficult to guarantee the consistency of process quality. On the other hand, due to the use of discrete assembly technology, the heat conduction path is correspondingly too long, resulting in The thermal signal feedback speed is greatly extended, thereby affecting the accu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/024H01S5/026
CPCH01S5/02415H01S5/0261
Inventor 毛虎蔡波毛森王彦孚焦英豪陆凯凯
Owner 广东鸿芯科技有限公司
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