Semiconductor laser device with constant temperature control function and manufacturing method thereof
A technology of constant temperature control and laser devices, applied in semiconductor lasers, laser parts, lasers, etc., can solve the problems of insensitive temperature control, inability to precisely control the optoelectronic performance parameters of semiconductor lasers, and poor process quality consistency.
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[0075] 1. The integrated TEC p-type semiconductor 201 uses a p-type bismuth telluride semiconductor material.
[0076] 2. The p-type bismuth telluride semiconductor material is Bi 2 Te 3 -Sb 2 Te 3 .
[0077] 3. The thickness of the integrated TEC p-type semiconductor 201 is 0.2mm-0.6mm.
[0078] 4. The integrated TEC n-type semiconductor 202 uses an n-type bismuth telluride semiconductor material.
[0079] 5. The n-type bismuth telluride semiconductor material is Bi 2 Te 3 -Bi 2 Se 3 .
[0080] 6. The thickness of the integrated TEC n-type semiconductor 202 is 0.2mm-0.6mm.
[0081] 7. The materials of the integrated TEC first-layer refractory electrode 203 and the integrated TEC second-layer refractory electrode 207 are chromium, titanium, tungsten or gold.
[0082] 8. The material of the semiconductor substrate 6 is silicon, and the material of the n-type buffer layer 8 is gallium nitride.
[0083] 9. The material of the semiconductor substrate 6 is indium phosphide.
[0084] Using the in...
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