The invention relates to a manufacturing method of a semiconductor laser device with a constant temperature control function, which organically integrates a semiconductor laser chip, a semiconductor thermoelectric refrigerator and a thermistor with a negative temperature coefficient on the basis of the existing semiconductor laser chip manufacturing technology. The semiconductor laser device includes: a semiconductor substrate, a first silicon dioxide layer, an n-type buffer layer, an n+ Omega contact layer, an n electrode, an n-type cap layer, a p-type cap layer, a P electrode, a p+ Omega contact layer, an integrated TEC thermoelectric cooler, a semiconductor laser active region, a second silicon dioxide layer, an NTC thin-film resistor, an NTC thin-film resistor metal electrode and a thermoelectric cooler spherical electrode. The purposes of accurate temperature control and high reliability are achieved, and accurate control over photoelectric performance parameters of the semiconductor laser is achieved. The semiconductor laser device is widely applied to the fields of environmental atmosphere detection, communication, aerospace, aviation, ships, precise instruments, geologicalexploration, oil exploration, field operation, industrial control and the like, and has a wide market prospect.