Integration method of high-sensitive temperature-controlled thin film hybrid integrated circuit

A technology of hybrid integrated circuits and integrated methods, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve the problems of integrated circuits, reduce thermal conduction resistance, improve long-term reliability, and broad market prospects Effect

Inactive Publication Date: 2013-02-13
GUIZHOU ZHENHUA FENGGUANG SEMICON
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

However, this integrated circuit is not a highly sensitive temperature-controlled thin film hybrid integrated circuit

Method used

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  • Integration method of high-sensitive temperature-controlled thin film hybrid integrated circuit
  • Integration method of high-sensitive temperature-controlled thin film hybrid integrated circuit
  • Integration method of high-sensitive temperature-controlled thin film hybrid integrated circuit

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Embodiment

[0017] The FHTC30 temperature-controlled precision integrated power operational amplifier developed by Guizhou Zhenhua Scenery Semiconductor Co., Ltd. is mainly used in the fields of precision measurement and precision control for fast and precise processing and amplification of sensor signals. The typical working environment temperature is -100℃~200℃.

[0018] The core part of the device is a power operational amplifier chip (device main chip), a self-made thin film thermistor (for temperature control signal acquisition), a small power precision operational amplifier chip (for temperature control signal processing and amplification) ). Adopt the technology of the present invention—the integrated three-dimensional hybrid integration technology of the thin film thermistor and the main chip of the temperature control device. The specific process is as follows:

[0019] ⑴ Selection of ceramic substrate: In order to facilitate the rapid transfer of heat and match the thermal expa...

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Abstract

The invention relates to an integration method of a high-sensitive temperature-controlled thin film hybrid integrated circuit; the integration method comprises the following steps of: firstly growing a thin film resistor, a thin film conduction band and a bonding region on the surface of an aluminium nitride (Al3N4) ceramic substrate in a thin film sputtering manner or an evaporation manner; then forming a thermistor thin film in the same manner and forming an insulating medium layer and a metallization layer required for pasting a chip on the thermistor thin film in the same manner; mounting a thermo-sensitive sensing signal processing chip, a temperature controller main chip and other active or inactive components on the substrate; and finally, bonding by adopting a bonding wire, and sealing a tube base and a tube cap in a specific atmosphere to obtain the high sensitive temperature-controlled thin film hybrid integrated circuit. The integration method can be used for realizing the gapless contact, which belongs to interatomic contact, of a thin film thermistor and the temperature controller main chip on the maximum contact surface, so that the heat of the main chip can be rapidly conducted to the thermistor to the maximum extent, and thus high-sensitive temperature control can be realized.

Description

technical field [0001] The invention relates to an integrated circuit, in particular to a highly sensitive temperature-controlled thin-film hybrid integrated circuit. Background technique [0002] In the original temperature-controllable hybrid circuit integration technology, two-dimensional planar integration technology is used on the hybrid integration surface of the temperature-controllable integrated circuit, and the separated heat-sensitive chip resistors, heat-sensitive sensing signal processing chips, and temperature control devices are integrated. Separate components such as the main chip and other active or passive components are directly mounted on the film substrate, and then bonded with bonding wire (gold wire or silicon-aluminum wire) to complete the entire electrical connection, and finally in a specific atmosphere It is made by sealing the tube base and tube cap. Due to the use of two-dimensional planar integration technology in the original technology, there...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/98
Inventor 杨成刚苏贵东连云刚
Owner GUIZHOU ZHENHUA FENGGUANG SEMICON
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