Hot-forging process for tantalum target material with high performance

Abstract

The invention relates to a hot-forging process for tantalum target material with high performance. The process comprises the following steps of: firstly, forging a tantalum ingot by means of cold forging for the first time; performing acid washing and heat treatment on the tantalum ingot and forging the tantalum ingot by means of hot forging for the second time; and performing acid washing and heat treatment on the tantalum ingot again and forging the tantalum ingot by means of hot forging for the third time. By the hot-forging process, the tantalum ingot with large diameter (more than or equal to 160mm) applied to the tantalum target material with the high performance is forged by a combined process of cold forging and hot forging, and the process is matched with a proper heat treatment process so as to acquire grain sizes and texture components required by the product. By utilizing rolling blanks produced by the process, the tantalum target material with the high performance of which the texture proportion in the direction (100) of the thickness is more than 50 percent and is uniform and which meets a using requirement of high-end sputtering base platform can be obtained. Compared with the common tantalum target material, the tantalum target material with the high performance has the advantages that the texture components of which the texture proportion in the direction of the thickness of the target material is more than 50 percent is realized, and a high requirement on the texture uniformity is proposed, so that the consistency of sputtering velocity in a using process is ensured.

Description

technical field [0001] The invention relates to the technical field of nonferrous metal metallurgy, in particular to a hot forging process for a high-performance tantalum target. Background technique [0002] Tantalum targets are mainly used in the semiconductor coating industry. [0003] Physical vapor deposition (PVD) is one of the most critical processes in the production process of semiconductor chips. Its purpose is to deposit metal or metal compounds in the form of thin films on silicon wafers or other substrates, and then through photolithography and corrosion etc. The cooperation of the process finally forms the complex wiring structure in the semiconductor chip. Physical vapor deposition is accomplished through sputtering machines, and the sputtering target is a very important key consumable used in the above process. Common sputtering targets include high-purity Ta, as well as non-ferrous metals such as Ti, Al, Co and Cu. [0004] As the wafer size increases fro...

AI Technical Summary

Problems solved by technology

[0005] In the prior art, the tantalum target is mainly obtained by cold rolling or cold forging process, and the texture components in the thickness direction of the obtained target are not uniform, which is mainly manifested in the upper and lower layers of the target (100) texture is dominant, The (111) texture is dominant in the middle. This type of target can be used in machines with low requirements, but the uneven sputtering rate when used in high-end machines such as 12" is unacceptable.