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Semiconductor device and solid state relay using same

一种半导体、电压的技术，应用在半导体器件、半导体/固态器件制造、半导体/固态器件零部件等方向，能够解决SiC-MOSFET导通电阻增加、晶体缺陷扩大等问题，达到防止晶体缺陷扩大、防止导通电阻增加、抑制晶体缺陷的扩大的效果

Active Publication Date: 2013-02-06
PANASONIC INTPROP MANAGEMENT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the case of a compound semiconductor such as SiC, there is a problem that crystal defects are enlarged due to the current flowing in the forward direction of the pn junction diode
The on-resistance Ron includes the substrate resistance Rsub in addition to the resistance Repi of the epitaxial growth layer. Therefore, in the case of a SiC substrate, when the current flows in the forward direction, the crystal defect expands, which will cause the SiC-MOSFET to be turned on. Increased resistance

Method used

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  • Semiconductor device and solid state relay using same
  • Semiconductor device and solid state relay using same
  • Semiconductor device and solid state relay using same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0038] The semiconductor relay according to Embodiment 1 is characterized in that an output element composed of a SiC-MOSFET as a compound semiconductor element is used externally connected to a silicon diode as a protection element. Furthermore, the semiconductor device according to the present embodiment includes a unipolar compound semiconductor element as the output element, and a bypass semiconductor element externally connected in parallel to the compound semiconductor element as the protection element. At this time, the energization start voltage of the bypass semiconductor element is lower than the energization start voltage of the compound semiconductor element in the direction from the source to the drain.

[0039] The semiconductor relay of this embodiment further includes: a light emitting element that emits light according to an input signal; a photodiode array that receives the light to generate electricity; The gate and source of the element are connected to bot...

Embodiment approach 2

[0053] The semiconductor device according to Embodiment 2 is characterized in that Figure 7 As shown, the bypass semiconductor element constituting the protection element 50 is composed of a Si-MOSFET 51, the drain of the Si-MOSFET 51 is connected to the drain of the SiC-MOSFET 31 of the output element 30, and the Si - The source of the MOSFET 51 is connected to the source of the SiC-MOSFET 31 .

[0054] According to this structure, when the SiC-pn (body) diode 32 connected in parallel in the source-to-drain direction is compared with the body diode 52 of the Si-MOSFET 51, the Vf of the body diode 52 of the Si-MOSFET 51 (about 0.6V) is also smaller than the forward voltage drop Vf of the SiC-pn (body) diode 32 (about 3V).

[0055]Therefore, when a (+) voltage is applied to the source side and a (-) voltage is applied to the drain side, the current flowing to the SiC-pn (body) diode 32 without the silicon diode 52 passes through the body of the Si-MOSFET 51 Diode 52 is bypas...

Embodiment approach 3

[0058] The semiconductor device according to Embodiment 3 is characterized in that Figure 8 As shown, the semiconductor element for bypassing the protection element is a SiC-Schottky diode 60, the cathode of the SiC-Schottky diode 60 is connected to the drain of the SiC-MOSFET 31, and the SiC-Schottky The anode of base diode 60 is connected to the source of SiC-MOSFET 31 .

[0059] Figure 9 The result of measuring the relationship between the voltage and the energized current in the SiC-pn (body) diode 32 and the SiC-Schottky diode 60 connected in parallel in the source-to-drain direction is shown. Such as Figure 9 shown, at the energizing current of I CROSS Below, the Vf of the SiC-Schottky diode 60 (curve b) is smaller than the forward voltage drop Vf of the SiC-pn (body) diode 32 (curve a). Therefore, if the conduction current is I CROSS Hereinafter, when a (+) voltage is applied to the source side and a (-) voltage is applied to the drain side, the current flowing ...

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Abstract

A semiconductor device is provided with a unipolar compound semiconductor element and a bypass semiconductor element that is externally connected in parallel to the compound semiconductor element. The breakdown voltage of the bypass semiconductor element is lower than the breakdown voltage of the compound semiconductor element in the direction from the source to the drain.

Description

technical field [0001] The present invention relates to a semiconductor device and a semiconductor relay using the semiconductor device, and more particularly to a semiconductor device using a compound semiconductor such as SiC and a semiconductor relay using the semiconductor device. Background technique [0002] A photo-coupled semiconductor relay is known that includes a light-emitting element that emits light based on an input signal and a light-receiving element that receives an optical signal from the light-emitting element to generate an electromotive force, and the output MOSFET is turned on or off by the electromotive force (see, for example, Japan Japanese Patent Laid-Open Publication No. 08-204533). [0003] The on-resistance of the semiconductor relay is small, and the semiconductor relay can control a minute analog signal and is compact, so it can be used in various applications. [0004] Figure 11 It is a figure which shows the structure of the conventional s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/78H01L27/04H01L27/06H01L29/12H01L29/78
CPCH01L25/167H01L27/0605H01L31/173H01L29/7802H01L29/1608H01L2924/13091H01L29/872H01L27/0727H01L27/0255H01L2224/06181H01L29/2003H01L29/861H01L23/62H03K17/785H01L21/8252H01L21/8213H01L29/7806H01L2924/1306H01L2924/10272H01L2924/1033H01L2924/1203H01L2924/0002H01L2924/00
Inventor 冈田洋砂田卓也大森猛司
Owner PANASONIC INTPROP MANAGEMENT CO LTD