Manufacture method for switching tube and array substrate

Abstract

A method for manufacturing a switch tube and a method for manufacturing an array substrate, including: firstly forming a first metal layer (111), an insulation layer (112), a semiconductor layer (113), an Ohmic contact layer (114), a second metal layer (115), a third metal layer (116) and a photoresist layer (117) sequentially on a substrate (100); after patterning the photoresist layer (117), etching the third metal layer (116) and the second metal layer (115) to form an input electrode and an output electrode of a switch tube; using a stripping solution with an amine content of at least 30% by weight to remove the photoresist layer (117) and the residual metal; and finally etching the Ohmic contact layer (114). In this way, electrical anomalies in a switch tube can be effectively avoided and the yield of manufacturing procedures can be increased.

Description

technical field [0001] The invention relates to the technical field of liquid crystal production, in particular to a production method of a switch tube and a production method of an array substrate. Background technique [0002] Thin Film Transistor (TFT, Thin Film Transistor) is one of the important elements of the array substrate. The thin film transistor technology is the core of liquid crystal display technology and has a great impact on the quality of liquid crystal display. [0003] In the manufacturing process of thin film transistors, it generally goes through processes such as cleaning, film formation, photolithography, inspection and repair. The core process is photolithography, which mainly includes photoresist coating, exposure, development, etching, and stripping. When fabricating the metal wiring of the thin film transistor on the substrate, since the resistivity of copper is small, it is more suitable for making the metal wire circuit of the large-scale liquid...

AI Technical Summary

Problems solved by technology

[0005] In the above steps, on the one hand, due to the addition of one layer of molybdenum metal layer 15, on the other hand, it is necessary to use copper etching solution to etch the copper metal layer 16 and molybdenum metal layer 15 in step S2. When the selection of molybdenum is relatively large, it will cause the copper metal layer 161 to be etched to meet the requirements, but the molybdenum metal layer 15 has not been etched completely, so the residue of molybdenum metal will be caused; although fluorine compounds can be added in the etching solution to effectively remove the molybdenum metal, but Fluorine compounds will etch the glass substrate 10, the insulating layer 12, the semiconductor layer 13 and the ohmic contact layer 14, making it impossible to carry out process rework

At the same time, if the molybdenum metal is not removed, the remaining molybdenum metal will affect the process of dry etching the ohmic contact layer 14 in step S3, and the dry etching cannot be carried out smoothly, and finally the remaining molybdenum metal will also lead to the formation of the source electrode. The electrode 162 and the drain electrode 163 are short-circuited, causing the electrical abnormality of the thin film transistor

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