Copper interconnection forming method

A technology of copper interconnection and barrier layer, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as circuit failure and loss, achieve high feasibility, reduce process temperature, process cost and energy consumption Effect

Active Publication Date: 2013-03-06
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The electromigration phenomenon of copper interconnection is similar to that of aluminum, which will form loss or accumulation at the bifurcation in the flow direction to form voids or hillocks, making the circuit fail

Method used

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Embodiment Construction

[0040] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.

[0041] In order to provide a thorough understanding of the present invention, detailed steps and structures will be set forth in the following description to illustrate how the present invention solves the problem of copper interconnect reliability. Obviously, the practice of the invention is not limited to specific details familiar to those skilled in the semiconductor arts. Preferred embodiments of the present invention are described in detail below, however, the present invention may have other embodiments besides these detailed descriptions.

[0042] refer...

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Abstract

The invention relates to a copper interconnection forming method. The method includes: forming low dielectric material layers on a semiconductor substrate; etching a through hole and a groove on the low dielectric material layers respectively; forming a diffusion barrier layer in the through and the groove; forming a Cu layer and a Cu alloy layer on the diffusion barrier layer; and reflowing and annealing the Cu alloy layer to enable alloy elements in the Cu alloy layer to be diffused into the lower Cu layer, so that electromigration reliability of copper interconnection is improved effectively.

Description

technical field [0001] The invention relates to a method for forming copper interconnection, in particular to a method for manufacturing copper interconnection by using a low temperature reflow technique (low temperature reflow) using a two-step method. Background technique [0002] With the rapid development of the integrated circuit industry, copper has become a new generation of interconnect materials. Due to the continuous shrinking of device size and the continuous improvement of chip integration, the reliability of interconnect lines has always been an important factor affecting system reliability. The electromigration of interconnection wires has always been one of the important issues affecting the reliability of interconnection wires. The electromigration phenomenon of copper interconnection is similar to that of aluminum, which will form loss or accumulation at the bifurcation in the flow direction to form voids or hillocks, making the circuit invalid. [0003] In...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768
Inventor 鲍宇
Owner SEMICON MFG INT (SHANGHAI) CORP
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