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High-temperature impact-pressure-resistant sensor and production method thereof

A pressure sensor, shock-resistant technology, applied in the field of sensors, can solve the problem of the sensor not working, achieve the effect of reliable performance and reduce pollution

Inactive Publication Date: 2013-03-20
西安微纳传感器研究所有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The temperature can reach 300°C, which solves the problem that the sensor cannot work due to excessive leakage current at high temperature due to PN junction isolation

Method used

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  • High-temperature impact-pressure-resistant sensor and production method thereof
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Embodiment Construction

[0033] The present invention is described in further detail below in conjunction with accompanying drawing:

[0034] see Figure 1-3 , the high-temperature impact-resistant pressure sensor of the present invention includes a metal casing B and a core A enclosed in the metal casing B, the connecting part of the core A and the metal casing B is provided with threads, and the core A and the metal casing B are connected together by threads and laser welding; core A includes a cylindrical shell 1, and a horizontal groove 4 is arranged on the upper end of the shell 1, and an SOI chip 2 is arranged in the horizontal groove 4; the shell 1 Lead electrodes are arranged inside, and the pad electrodes of the SOI chip 2 are connected to the lead electrodes of the housing 1 through gold wires 3; the lead electrodes of the housing 1 are drawn out as inner leads 8, which are connected to the outer leads through the clamp 7 9. The lower part of the housing 1 is provided with an annular groov...

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Abstract

The invention discloses a high-temperature impact-pressure-resistant sensor and a production method thereof. The high-temperature impact-pressure-resistant sensor comprises a metal sleeve and a core body sleeved in the metal sleeve, wherein threads are arranged on the connection portion of the core body and the metal sleeve, and the core body and the metal sleeve are integrally connected through the threads in laser soldering mode. The core body comprises a cylindrical casing, a horizontal groove is arranged at the upper end of the casing, and a silicon on insulator (SOI) chip is arranged in the horizontal groove. A lead electrode is arranged in the casing, and a pad electrode of the SOI chip is connected with the lead electrode arranged in the casing through a gold wire. The lead electrode arranged in the casing is led out to form an internal lead, and the internal lead is connected onto an external lead through a clamp. According to the high-temperature impact-pressure-resistant sensor, the diffusion silicon PN junction isolation process design scheme is improved to be the insulation layer isolation SOI process scheme. The temperature of the high-temperature impact-pressure-resistant sensor can reach 300 DEG C, and the problem that the sensor cannot work due to overlarge current leakage at high temperature when PN junction isolation is adopted is solved.

Description

technical field [0001] The invention belongs to the technical field of sensors, and relates to a pressure sensor, in particular to a high-temperature impact-resistant pressure sensor and a preparation method thereof. Background technique [0002] In the prior art, the sensor is made by using integrated circuit technology to diffuse P-type impurities on the N-type silicon wafer, forming a PN junction on the contact surface of the two, and then making a Wheatstone bridge through a series of processes, using to feel the pressure. Then through soldering, the inner and outer leads are welded, and then the assembly of each component is carried out by screw thread and glue connection. The sensor made by this process, due to the PN junction isolation, will increase the leakage current as the temperature rises, so that the performance will deteriorate seriously, and its limit temperature is 125°C. Then lead wire welding, the general soldering tin temperature is 168°C, the high temp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/16G01L9/08H01L21/50
Inventor 袁晓斌陈龙张妮妮刘秀娥袁展荣
Owner 西安微纳传感器研究所有限公司
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