Preparation method for metamaterial and metamaterial
A technology of metamaterials and conductor layers, applied in the field of metamaterials and metamaterials preparation, to achieve the effects of large capacity, controllable electrode properties, and high process controllability
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0024] see figure 1 , is a flow chart of a method for preparing a metamaterial provided in the first embodiment of the present invention, the method of preparation includes:
[0025] S101: forming an insulating layer on a substrate.
[0026] Specifically, an insulating layer can be deposited on the substrate; a layer of insulating layer can also be formed on the substrate, for example, a layer of two layers can be formed on a silicon substrate by dry oxidation or wet oxidation. silicon oxide.
[0027] S102: Deposit a first intrinsic polysilicon layer on the first insulating layer.
[0028] Wherein, the thickness of the deposited first intrinsic polysilicon layer is set according to specific requirements.
[0029] S103: Doping the first intrinsic polysilicon to obtain a first conductor layer.
[0030] For example, P-type or N-type impurities are implanted into the first intrinsic polysilicon layer.
[0031] S104: forming a preset microstructure array on the first conductor...
Embodiment 2
[0044] see figure 2 , is a flow chart of a method for preparing a metamaterial provided in Embodiment 2 of the present invention, and the method includes:
[0045] S201: Cleaning the substrate.
[0046] S202: forming an insulating layer on the substrate.
[0047] Specifically, an insulating layer can be deposited on the substrate; a layer of insulating layer can also be formed on the substrate, for example, a layer of two layers can be formed on a silicon substrate by dry oxidation or wet oxidation. silicon oxide.
[0048] S203: Deposit a first intrinsic polysilicon layer on the first insulating layer.
[0049] Wherein, the thickness of the deposited first intrinsic polysilicon layer is set according to specific requirements.
[0050] S204: Doping the first intrinsic polysilicon to obtain a first conductor layer.
[0051] For example, P-type or N-type impurities are implanted into the first intrinsic polysilicon layer.
[0052] S205: Coating a layer of photoresist on th...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com