A kind of preparation method of supermaterial and supermaterial
A technology of metamaterials and conductor layers, applied in the field of metamaterials and metamaterials preparation, to achieve the effects of large capacity, high process controllability, and controllable electrode properties
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Embodiment 1
[0029] see figure 1 , is a flow chart of a method for preparing a metamaterial provided in the first embodiment of the present invention, the method of preparation includes:
[0030] S101: forming an insulating layer on a substrate.
[0031] Specifically, an insulating layer can be deposited on the substrate; a layer of insulating layer can also be formed on the substrate, for example, a layer of two layers can be formed on a silicon substrate by dry oxidation or wet oxidation. silicon oxide.
[0032] S102: Deposit a first intrinsic polysilicon layer on the first insulating layer.
[0033] Wherein, the thickness of the deposited first intrinsic polysilicon layer is set according to specific requirements.
[0034] S103: Doping the first intrinsic polysilicon to obtain a first conductor layer.
[0035] For example, P-type or N-type impurities are implanted into the first intrinsic polysilicon layer.
[0036] S104: forming a preset microstructure array on the first conductor...
Embodiment 2
[0049] see figure 2 , is a flow chart of a method for preparing a metamaterial provided in Embodiment 2 of the present invention, and the method includes:
[0050] S201: Cleaning the substrate.
[0051] S202: forming an insulating layer on the substrate.
[0052] Specifically, an insulating layer can be deposited on the substrate; a layer of insulating layer can also be formed on the substrate, for example, a layer of two layers can be formed on a silicon substrate by dry oxidation or wet oxidation. silicon oxide.
[0053] S203: Deposit a first intrinsic polysilicon layer on the first insulating layer.
[0054] Wherein, the thickness of the deposited first intrinsic polysilicon layer is set according to specific requirements.
[0055] S204: Doping the first intrinsic polysilicon to obtain a first conductor layer.
[0056] For example, P-type or N-type impurities are implanted into the first intrinsic polysilicon layer.
[0057] S205: Coating a layer of photoresist on th...
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