Inductive coupling plasma processor and plasma substrate processing method

Abstract

The invention relates to an inductive coupling plasma processor and a plasma substrate processing method. A magnetic line adjusting component made of magnetic materials is disposed to form a close-preparing low magnetic resistance passage as the passage for circulating of a magnetic line loop outside a reaction cavity. The low magnetic resistance passage standardizes most magnetic line paths in an induced magnetic field to collect originally divergent magnetic energy, so that magnetic field intensity of the reaction cavity can be doubled. Or, plasma for processing can be generated at the same magnetic field intensity utilizing less energy, so that energy utilization efficiency is improved. In addition, RF (radio frequency) electromagnetic leakage is reduced evidently, electromagnetic interference to environments is reduced, heat generation of equipment is reduced, and system reliability and stability is increased. The magnetic line adjusting component is provided two protrusions extending oppositely and corresponding to two magnetic poles, and accordingly magnetic lines between the two magnetic poles are distributed uniformly and linearly, and uniformity of plasma distribution on the surface of a substrate is improved.

Description

technical field [0001] The invention relates to an inductively coupled plasma processing device and a substrate processing method thereof, in particular to an inductively coupled plasma processing device and a substrate processing method that can standardize the path of magnetic force lines to collect divergent energy. Background technique [0002] Currently, in the manufacturing process of semiconductor devices, an inductively coupled plasma processing device (ICP) is usually used to generate the plasma of the reactive gas 50 to perform processing such as etching on the substrate 30 . [0003] Such as figure 1 As shown in , the conventional inductively coupled plasma generator (ICP) usually introduces the reaction gas 50 into the vacuum reaction chamber 20 . An induction coil 40 is provided on the top (or bottom or side wall) of the reaction chamber 20, and the first radio frequency source RF1 is applied, and the resulting induced magnetic field will induce a radio frequen...

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Problems solved by technology

[0004] However, the above-mentioned induced magnetic field generated by the first radio frequency source RF1 has the distribution of the magnetic force lines 410 as follows: figure 1 As shown by the dotted line in the middle, it can be seen that the uneven distribution of the magnetic force lines 410 above the substrate 30 will cause the plasma density corresponding to the center and edge positions of the substrate 30 to be uneven, thereby affecting the difference in radial direction on the substrate 30. Etch Uniformity of Position

[0005] In addition, because the induced magnetic field generated by the first radio frequency source RF1 is an open magnetic field, most of its energy is lost, and only a small part above the substrate 30 is used to generate the plasma, so the utilization efficiency of energy is low.

Moreover, most of the other unutilized magnetic field energy will produce interference, and these interferences have to be eliminated at a high cost; the unutilized magnetic field energy will also induce heat, which will increase the temperature of the entire plasma generator. High, reducing the service life of the device and the stability of the etching operation

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