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Sapphire crystal annealing process

A technology of sapphire crystal and annealing process, which is applied in the directions of crystal growth, post-processing details, and post-processing, etc. It can solve the problems of uncontrolled temperature drop process, slow cooling speed, and prolonged annealing time, so as to improve product quality and yield , uniform and rapid cooling, avoiding stress cracking effect

Inactive Publication Date: 2013-04-03
焦作市光源晶电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] The temperature of the sapphire crystal growth environment is above 2000°C. After the growth is completed, the sapphire crystal needs to be annealed and cooled. The traditional annealing process takes about 6-7 days, and in the traditional annealing process, the control of the annealing temperature is vague, and the temperature drop process is not stable. Controlled, it is easy to cause crystal stress cracking due to too fast cooling rate in the furnace; or too slow cooling rate in the furnace leads to prolonged annealing time, low production efficiency and increased cost

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] After the sapphire single crystal growth is completed, annealing is carried out in the sapphire single crystal growth furnace.

[0017] Step 1: In the high temperature stage, the temperature of the sapphire furnace is lowered at a rate of 40°C per hour. After about 10 hours of cooling, the temperature in the furnace drops from 2000°C to 1600°C;

[0018] Step 2: In the medium temperature stage, the sapphire furnace is cooled at a rate of 80°C per hour, and after about 13 hours of cooling, the temperature in the furnace drops to 500°C;

[0019] Step 3: In the low temperature stage, turn off the heating equipment in the furnace, and at the same time fill the furnace with an inert gas to cool to room temperature, where the pressure of the inert gas is 1 standard atmospheric pressure.

Embodiment 2

[0021] After the sapphire single crystal growth is completed, annealing is carried out in the sapphire single crystal growth furnace.

[0022] Step 1: In the high temperature stage, the temperature of the sapphire furnace is lowered at a rate of 30°C per hour. After about 13 hours of cooling, the temperature in the furnace drops from 2000°C to 1600°C;

[0023] Step 2: In the medium temperature stage, the sapphire furnace is cooled at a rate of 70°C per hour, and after about 16 hours of cooling, the temperature in the furnace drops to 500°C;

[0024] Step 3: In the low temperature stage, turn off the heating equipment in the furnace, and at the same time fill the furnace with an inert gas to cool to room temperature, where the pressure of the inert gas is 1 standard atmospheric pressure.

Embodiment 3

[0026] After the sapphire single crystal growth is completed, annealing is carried out in the sapphire single crystal growth furnace.

[0027] Step 1: In the high temperature stage, the temperature of the sapphire furnace is lowered at a rate of 15°C per hour. After about 26 hours of cooling, the temperature in the furnace drops from 2000°C to 1600°C;

[0028] Step 2: In the medium temperature stage, the sapphire furnace is cooled at a rate of 80°C per hour, and after about 13 hours of cooling, the temperature in the furnace drops to 500°C;

[0029] Step 3: In the low temperature stage, turn off the heating equipment in the furnace, and at the same time fill the furnace with inert gas to cool down to room temperature, where the pressure of the inert gas is 1.5 standard atmospheric pressure.

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PUM

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Abstract

The invention discloses a sapphire crystal annealing process. The sapphire crystal annealing process comprises the steps of: cooling at a high temperature stage, cooling at an intermediate temperature stage and cooling at a low temperature stage, wherein inert gases are used for cooling and protection during cooling at the low temperature stage. The sapphire crystal annealing process has the advantages that the annealing time is short by saving about 50 percent of time compared with the traditional melting processes, the energy consumption is low by reducing 10 percent of energy consumption compared with the traditional annealing processes; the production efficiency is improved, and cooling is uniform and fast to avoid stress cracking of sapphire crystal; and the product quality and the pass rate are improved.

Description

technical field [0001] The invention relates to a sapphire crystal annealing process, which belongs to the technical field of artificial sapphire production. Background technique [0002] The temperature of the sapphire crystal growth environment is above 2000°C. After the growth is completed, the sapphire crystal needs to be annealed and cooled. The traditional annealing process takes about 6-7 days, and in the traditional annealing process, the control of the annealing temperature is vague, and the temperature drop process is not stable. If it is under control, it is very easy to cause crystal stress cracking due to too fast cooling rate in the furnace; or too slow cooling rate in the furnace leads to prolonged annealing time, low production efficiency and increased cost. Staged annealing enables the crystal to be annealed slowly in the high temperature region, reducing crystal defects, and in the case that the low temperature region has little effect on the crystal, rapid...

Claims

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Application Information

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IPC IPC(8): C30B33/02
Inventor 刘书强任多奇樊国岑于超魏国涛
Owner 焦作市光源晶电科技有限公司
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